Connection Diagrams 3 3 1501 11 1 2 1 1504 3 2 1 MMBD1501 MMBD1503 MMBD1504 MMBD1505 SOT-23 MARKING 11 MMBD1501A 13 MMBD1503A 14 MMBD1504A 15 MMBD1505A A11 A13 A14 A15 1 3 3 1503 2NC 1 2 3 1505 2 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF(AV) Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current Pulse Width = 1.0 second Pulse Width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A °C TJ Operating Junction Temperature 150 °C Value Units *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol Parameter PD Power Dissipation 350 mW RθJA Thermal Resistance, Junction to Ambient 357 °C/W Electrical Characteristics Symbol Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Current CT Total Capacitance 2001 Fairchild Semiconductor Corporation TA = 25°C unless otherwise noted Test Conditions IR = 5.0 µA IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VR = 125 V VR = 125 V, TA = 150°C VR = 180 V VR = 180 V, TA = 150°C VR = 0, f = 1.0 MHz Min 200 620 720 800 830 0.87 0.90 Max Units V 720 830 890 930 1.1 1.15 1.0 3.0 10 5.0 4.0 mV mV mV mV V V nA µA nA µA PF MMBD1500 series, Rev. B3 MMBD1501/A / 1503/A / 1504/A / 1505/A MMBD1501/A / 1503/A / 1504/A / 1505/A (continued) Typical Characteristics 325 3 T a = 2 5 °C R R e ve rse C u rre nt, I [nA ] R everse V olta ge, VR[V ] T a= 25 ° C 300 275 250 3 5 10 20 30 50 2 1 0 100 R e ve rse C u rre n t, I R [u A ] Forward Voltage, V F [mV] Forward Voltage, V F [V] 205 Ta= 25° C 400 2 190 800 450 1 170 Figure 2. Reverse Current vs Reverse Voltage IR - 130 - 250 Volts Ta= 25° C 500 350 150 R e v e rs e V o lta g e , V R [V ] Figure 1. Reverse Voltage vs Reverse Current BV - 3.0 to 100 uA 550 130 3 5 10 20 Forward Current, IF [uA] 30 50 750 700 650 600 550 500 100 Figure 3. Forward Voltage vs Forward Current VF - 1 to 100 uA 0.1 0.2 0.3 0.5 1 2 Forward Current, I F [mA] 3 5 10 Figure 4. Forward Voltage vs Forward Current VF - 0.1 to 10 mA 1.20 4.0 Ta= 25 °C Ta= 25 ° C Total Capacitance [pF] Forward Voltage, V F [V] 1.15 1.10 1.05 1.00 0.95 0.90 0.85 3.5 3.0 2.5 2.0 1.5 0.80 0.75 1.0 10 20 30 50 100 200 Forward Current, IF [mA] 300 500 Figure 5. Forward Voltage vs Forward Current VF - 10 to 800 mA 0 2 4 6 8 10 12 14 Reverse Voltage [V] Figure 6. Total Capacitance vs Reverse Voltage VR - 0 to 15 V MMBD1500 series, Rev. B3 MMBD1501/A / 1503/A / 1504/A / 1505/A Small Signal Diode (continued) Typical Characteristics (continued) 500 Current [mA] 300 IF 200 (A V ) -A VE 100 RA GE RE CT IF I E DC UR RE NT -m A Power Dissipation, P D [mW] 400 400 DO-35 Pkg 300 SOT-23 Pkg 200 100 0 0 0 50 100 150 Ambient Temperature, T A [ ° C] Figure 7. Average Rectified Current (IF(AV)) versus Ambient Temperature (TA) 0 50 100 150 200 Average Temperature, IO [ ° C] Figure 8. Power Derating Curve MMBD1500 series, Rev. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3