TI OPA333 1.8-v, micropower, cmos operational amplifiers, zero-drift sery Datasheet

OPA333
OPA2333
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SBOS351D – MARCH 2006 – REVISED NOVEMBER 2013
1.8-V, microPower, CMOS Operational Amplifiers, Zero-Drift Series
Check for Samples: OPA333, OPA2333
FEATURES
DESCRIPTION
1
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•
•
•
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2
The OPA333 series of CMOS operational amplifiers
use a proprietary auto-calibration technique to
simultaneously provide very low offset voltage (10
μV, max) and near-zero drift over time and
temperature. These miniature, high-precision, low
quiescent current amplifiers offer high-impedance
inputs that have a common-mode range 100 mV
beyond the rails, and rail-to-rail output that swings
within 50 mV of the rails. Single or dual supplies as
low as +1.8 V (±0.9 V) and up to +5.5 V (±2.75 V)
can be used. These devices are optimized for lowvoltage, single-supply operation.
Low Offset Voltage: 10 μV (max)
Zero Drift: 0.05 μV/°C (max)
0.01-Hz to 10-Hz Noise: 1.1 μVPP
Quiescent Current: 17 μA
Single-Supply Operation
Supply Voltage: 1.8 V to 5.5 V
Rail-to-Rail Input/Output
microSize Packages: SC70 and SOT23
APPLICATIONS
•
•
•
•
•
•
The OPA333 family offers excellent CMRR without
the
crossover
associated
with
traditional
complementary input stages. This design results in
superior performance for driving analog-to-digital
converters (ADCs) without degradation of differential
linearity.
Transducers
Temperature Measurements
Electronic Scales
Medical Instrumentation
Battery-Powered Instruments
Handheld Test Equipment
The OPA333 (single version) is available in the
SC70-5, SOT23-5, and SO-8 packages. The
OPA2333 (dual version) is offered in DFN-8 (3 mm ×
3 mm), MSOP-8, and SO-8 packages. All versions
are specified for operation from –40°C to +125°C.
500 nV/div
0.1-Hz TO 10-Hz NOISE
OPA333
OUT
1
V-
2
+IN
3
OPA333
5
4
V+
-IN
+IN
1
V-
2
-IN
3
SOT23-5
5
V+
4
OUT
SC70-5
OPA2333
1 s/div
OUT A
1
-IN A
2
+IN A
3
V-
4
Exposed
Thermal
Die Pad
on
Underside
8
V+
7
OUT B
6
-IN B
5
+IN B
DFN-8 (SON-8)
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2006–2013, Texas Instruments Incorporated
OPA333
OPA2333
SBOS351D – MARCH 2006 – REVISED NOVEMBER 2013
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION (1)
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Voltage
Supply
Signal input terminals
(2)
Temperature
V
mA
Output short-circuit (3)
Continuous
mA
Operating, TA
–40 to +150
°C
Storage, Tstg
–65 to +150
°C
Junction, TJ
+150
°C
Human body model (HBM)
4000
V
1000
V
400
V
Machine model (MM)
(2)
(3)
2
V
±10
Electrostatic discharge (ESD) ratings Charged device model (CDM)
(1)
UNIT
+7
–0.3 to (V+) + 0.3
Signal input terminals (2)
Curent
VALUE
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not supported.
Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less.
Short-circuit to ground, one amplifier per package.
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ELECTRICAL CHARACTERISTICS: VS = +1.8 V to +5.5 V
At TA = +25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OFFSET VOLTAGE
VOS
Input offset voltage
VS = +5 V
dVOS/dT
Input offset voltage drift
TA = –40°C to +125°C
PSRR
Power-supply rejection ratio
VS = +1.8 V to +5.5 V, TA = –40°C to +125°C
Long-term stability (1)
10
0.05
μV/°C
1
5
μV/V
See note
Channel separation, dc
μV
2
0.02
(1)
µV
μV/V
0.1
INPUT BIAS CURRENT
IB
Input bias current
IOS
Input offset current
±70
TA = –40°C to +125°C
±200
pA
±150
±140
pA
±400
pA
NOISE
Input voltage noise
in
Input current noise
μVPP
f = 0.01 Hz to 1 Hz
0.3
f = 0.1 Hz to 10 Hz
1.1
μVPP
f = 10 Hz
100
fA/√Hz
INPUT VOLTAGE
VCM
Common-mode voltage range
CMRR
Common-mode rejection ratio
(V–) – 0.1
(V–) – 0.1 V < VCM < (V+) + 0.1 V,
TA = –40°C to +125°C
106
(V+) + 0.1
V
130
dB
Differential
2
pF
Common-mode
4
pF
130
dB
INPUT CAPACITANCE
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
(V–) + 100 mV < VO < (V+) – 100 mV,
RL = 10 kΩ, TA = –40°C to +125°C
106
FREQUENCY RESPONSE
GBW
Gain-bandwidth product
CL = 100 pF
350
kHz
SR
Slew rate
G = +1
0.16
V/μs
OUTPUT
Voltage output swing from rail
ISC
Short-circuit current
CL
Capacitive load drive
Open-loop output impedance
RL = 10 kΩ
30
RL = 10 kΩ, TA = –40°C to +125°C
50
mV
70
mV
±5
mA
See Typical Characteristics
f = 350 kHz, IO = 0 A
2
kΩ
POWER SUPPLY
VS
IQ
Specified voltage range
Quiescent current per amplifier
Turn-on time
1.8
IO = 0 A
17
TA = –40°C to +125°C
VS = +5 V
5.5
V
25
μA
28
μA
μs
100
TEMPERATURE
TA
Tstg
(1)
Specified range
–40
+125
°C
Operating range
–40
+150
°C
Storage range
–65
+150
°C
300-hour life test at +150°C demonstrated randomly distributed variation of approximately 1 μV.
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THERMAL INFORMATION: OPA333
OPA333
THERMAL METRIC (1)
D (SOIC)
DBV (SOT23)
DCK (SC70)
8 PINS
5 PINS
5 PINS
θJA
Junction-to-ambient thermal resistance
140.1
220.8
298.4
θJCtop
Junction-to-case (top) thermal resistance
89.8
97.5
65.4
θJB
Junction-to-board thermal resistance
80.6
61.7
97.1
ψJT
Junction-to-top characterization parameter
28.7
7.6
0.8
ψJB
Junction-to-board characterization parameter
80.1
61.1
95.5
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
N/A
N/A
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
THERMAL INFORMATION: OPA2333
OPA2333
THERMAL METRIC (1)
D (SOIC)
DGK (MSOP)
DRB (DFN)
8 PINS
8 PINS
8 PINS
θJA
Junction-to-ambient thermal resistance
124.0
180.3
46.7
θJCtop
Junction-to-case (top) thermal resistance
73.7
48.1
26.3
θJB
Junction-to-board thermal resistance
64.4
100.9
22.2
ψJT
Junction-to-top characterization parameter
18.0
2.4
1.6
ψJB
Junction-to-board characterization parameter
63.9
99.3
22.3
θJCbot
Junction-to-case (bottom) thermal resistance
N/A
N/A
10.1
(1)
4
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
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PIN CONFIGURATIONS: OPA333
DBV PACKAGE
SOT23-5
(TOP VIEW)
OUT
1
V-
2
+IN
3
DCK PACKAGE
SC70-5
(TOP VIEW)
5
4
V+
+IN
1
V-
2
-IN
3
-IN
5
V+
4
OUT
D PACKAGE
SO-8
(TOP VIEW)
(1)
(1)
(1)
1
8
NC
-IN
2
7
V+
+IN
3
6
OUT
V-
4
5
NC
NC
(1)
NC denotes no internal connection.
PIN CONFIGURATIONS: OPA2333
DRB PACKAGE
DFN-8 (SON-8)
(TOP VIEW)
(2)
OUT A
1
-IN A
2
+IN A
3
V-
4
Exposed
Thermal
Die Pad
on
(2)
Underside
D AND DGK PACKAGES
SO-8 AND MSOP-8 (VSSOP-8)
(TOP VIEW)
OUT A
8
V+
7
OUT B
6
-IN B
5
+IN B
1
8
V+
7
OUT B
A
-IN A
2
B
+IN A
3
6
-IN B
V-
4
5
+IN B
Connect thermal die pad to V–.
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OPA2333
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TYPICAL CHARACTERISTICS
Table 1. List of Typical Characteristics
TITLE
FIGURE
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
Figure 1
OFFSET VOLTAGE DRIFT PRODUCTION DISTRIBUTION
Figure 2
OPEN-LOOP GAIN vs FREQUENCY
Figure 3
COMMON-MODE REJECTION RATIO vs FREQUENCY
Figure 4
POWER-SUPPLY REJECTION RATIO vs FREQUENCY
Figure 5
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
Figure 6
INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE
Figure 7
INPUT BIAS CURRENT vs TEMPERATURE
Figure 8
QUIESCENT CURRENT vs TEMPERATURE
Figure 9
LARGE-SIGNAL STEP RESPONSE
Figure 10
SMALL-SIGNAL STEP RESPONSE
Figure 11
POSITIVE OVERVOLTAGE RECOVERY
Figure 12
NEGATIVE OVERVOLTAGE RECOVERY
Figure 13
SETTLING TIME vs CLOSED-LOOP GAIN
Figure 14
SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE
Figure 15
0.1-Hz TO 10-Hz NOISE
Figure 16
CURRENT AND VOLTAGE NOISE SPECTRAL DENSITY vs FREQUENCY
Figure 17
6
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TYPICAL CHARACTERISTICS
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0.0175
0.0200
0.0225
0.0250
0.0275
0.0300
0.0325
0.0350
0.0375
0.0400
0.0425
0.0450
0.0475
0.0500
Population
Population
At TA = +25°C, VS = +5 V, and CL = 0 pF, unless otherwise noted.
Offset Voltage (mV)
Offset Voltage Drift (mV/°C)
Figure 1. OFFSET VOLTAGE PRODUCTION DISTRIBUTION
140
100
200
120
150
100
Phase
100
60
50
40
Gain
20
0
-20
10
100
1k
10k
100k
CMRR (dB)
250
Phase (°)
120
80
AOL (dB)
Figure 2. OFFSET VOLTAGE DRIFT PRODUCTION
DISTRIBUTION
80
60
0
40
-50
20
-100
0
1
1M
10
100
Frequency (Hz)
1k
10k
Figure 3. OPEN-LOOP GAIN vs FREQUENCY
3
VS = ±2.75 V
VS = ±0.9 V
+PSRR
2
-PSRR
Output Swing (V)
PSRR (dB)
100
60
40
-40°C
1
0
0
-3
100
1k
10k
100k
1M
+25°C
-40°C
-1
-2
10
+25°C
+125°C
20
1
1M
Figure 4. COMMON-MODE REJECTION RATIO vs
FREQUENCY
120
80
100k
Frequency (Hz)
+125°C
+25°C
-40°C
0
1
Frequency (Hz)
2
3
4
5
6
7
8
9
10
Output Current (mA)
Figure 5. POWER-SUPPLY REJECTION RATIO vs
FREQUENCY
Figure 6. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5 V, and CL = 0 pF, unless otherwise noted.
200
100
80
150
-IB
60
100
40
IB (pA)
IB (pA)
-IB
50
20
0
0
-20
+IB
-50
-40
-100
-60
+IB
-100
0
1
+IB
-150
-80
2
3
4
5
-200
-50
0
-25
Common-Mode Voltage (V)
25
50
75
100
125
Temperature (°C)
Figure 7. INPUT BIAS CURRENT vs COMMON-MODE
VOLTAGE
Figure 8. INPUT BIAS CURRENT vs TEMPERATURE
25
Output Voltage (1 V/div)
G=1
RL = 10 kW
20
VS = 5.5 V
IQ (mA)
VS = 5.5 V
VS = 1.8 V
-IB
15
VS = 1.8 V
10
5
0
-50
-25
0
25
50
75
100
Time (50 ms/div)
125
Temperature (°C)
2 V/div
Figure 10. LARGE-SIGNAL STEP RESPONSE
G = +1
RL = 10 kW
0
Input
Output
10 kW
+2.5 V
1 kW
1 V/div
Output Voltage (50 mV/div)
Figure 9. QUIESCENT CURRENT vs TEMPERATURE
0
OPA333
-2.5 V
Time (5 ms/div)
Time (50 ms/div)
Figure 11. SMALL-SIGNAL STEP RESPONSE
8
Figure 12. POSITIVE OVERVOLTAGE RECOVERY
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TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = +5 V, and CL = 0 pF, unless otherwise noted.
600
500
Input
Settling Time (ms)
1 V/div
2 V/div
4-V Step
0
0
10 kW
+2.5 V
1 kW
400
300
200
0.001%
Output
OPA333
100
0.01%
-2.5 V
0
Time (50 ms/div)
1
10
100
Gain (dB)
Figure 13. NEGATIVE OVERVOLTAGE RECOVERY
Figure 14. SETTLING TIME vs CLOSED-LOOP GAIN
40
35
25
500nV/div
Overshoot (%)
30
20
15
10
5
0
10
100
1000
1s/div
Load Capacitance (pF)
Figure 15. SMALL-SIGNAL OVERSHOOT
vs LOAD CAPACITANCE
Figure 16. 0.1-Hz TO 10-Hz NOISE
Voltage Noise (nV/ÖHz)
Continues with no 1/f (flicker) noise.
Current Noise
100
100
Voltage Noise
Current Noise (fA/ÖHz)
1000
1000
10
10
1
10
100
1k
10k
Frequency (Hz)
Figure 17. CURRENT AND VOLTAGE NOISE SPECTRAL DENSITY vs FREQUENCY
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DETAILED DESCRIPTION
The OPA333 and OPA2333 are unity-gain stable and free from unexpected output phase reversal. These
devices use a proprietary auto-calibration technique to provide low offset voltage and very low drift over time and
temperature. For lowest offset voltage and precision performance, optimize circuit layout and mechanical
conditions. Avoid temperature gradients that create thermoelectric (Seebeck) effects in the thermocouple
junctions formed from connecting dissimilar conductors. Cancel these thermally-generated potentials by assuring
they are equal on both input terminals. Other layout and design considerations include:
• Use low thermoelectric-coefficient conditions (avoid dissimilar metals).
• Thermally isolate components from power supplies or other heat sources.
• Shield op amp and input circuitry from air currents, such as cooling fans.
Following these guidelines reduces the likelihood of junctions being at different temperatures, which can cause
thermoelectric voltages of 0.1 μV/°C or higher, depending on materials used.
OPERATING VOLTAGE
The OPA333 and OPA2333 op amps operate over a power-supply range of +1.8 V to +5.5 V (±0.9 V to ±2.75 V).
Parameters that vary over supply voltage or temperature are shown in the Typical Characteristics section.
CAUTION
Supply voltages higher than +7 V (absolute maximum) can permanently damage the
device.
INPUT VOLTAGE
The OPA333 and OPA2333 input common-mode voltage range extends 0.1 V beyond the supply rails. The
OPA333 is designed to cover the full range without the troublesome transition region found in some other rail-torail amplifiers.
Typically, input bias current is approximately 70 pA; however, input voltages exceeding the power supplies can
cause excessive current to flow into or out of the input pins. Momentary voltages greater than the power supply
can be tolerated if the input current is limited to 10 mA. This limitation is easily accomplished with an input
resistor, as shown in Figure 18.
Current-limiting resistor
required if input voltage
exceeds supply rails by
³ 0.5 V.
IOVERLOAD
10 mA max
+5 V
VOUT
OPA333
VIN
5 kW
Figure 18. Input Current Protection
10
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INTERNAL OFFSET CORRECTION
The OPA333 and OPA2333 op amps use an auto-calibration technique with a time-continuous, 350-kHz op amp
in the signal path. This amplifier is zero-corrected every 8 μs using a proprietary technique. Upon power-up, the
amplifier requires approximately 100 μs to achieve specified VOS accuracy. This design has no aliasing or flicker
noise.
ACHIEVING OUTPUT SWING TO THE OP AMP NEGATIVE RAIL
Some applications require output voltage swings from 0 V to a positive full-scale voltage (such as +2.5 V) with
excellent accuracy. With most single-supply op amps, problems arise when the output signal approaches 0 V,
near the lower output swing limit of a single-supply op amp. A good, single-supply op amp may swing close to
single-supply ground, but will not reach ground. The output of the OPA333 and OPA2333 can be made to swing
to, or slightly below, ground on a single-supply power source. This swing is acheived with the use of the use of
another resistor and an additional, more negative power supply than the op amp negative supply. A pull-down
resistor can be connected between the output and the additional negative supply to pull the output down below
the value that the output would otherwise achieve, as shown in Figure 19.
V+ = +5 V
VOUT
OPA333
VIN
RP = 20 kW
Op Amp V- = GND
-5 V
Additional
Negative
Supply
Figure 19. VOUT Range to Ground
The OPA333 and OPA2333 have an output stage that allows the output voltage to be pulled to the negative
supply rail, or slightly below, using the technique previously described. This technique only works with some
types of output stages. The OPA333 and OPA2333 are characterized to perform with this technique; the
recommended resistor value is approximately 20 kΩ. Note that this configuration increases the current
consumption by several hundreds of microamps. Accuracy is excellent down to 0 V and as low as –2 mV.
Limiting and nonlinearity occurs below –2 mV, but excellent accuracy returns after the output is again driven
above –2 mV. Lowering the resistance of the pull-down resistor allows the op amp to swing even further below
the negative rail. Resistances as low as 10 kΩ can be used to achieve excellent accuracy down to –10 mV.
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APPLICATION INFORMATION
Figure 20 shows a temperature measurement application
REF3140
+5 V
0.1 mF
4.096 V
+
R9
150 kW
R1
6.04 kW
R5
31.6 kW
D1
+5 V
0.1 mF
+
-
R2
2.94 kW
-
+ +
R2
549 W
R4
6.04 kW
VO
OPA333
R6
200 W
K-Type
Thermocouple
40.7 mV/°C
Zero
Adjust
R3
60.4 W
Figure 20. Temperature Measurement
Figure 21 shows the basic configuration for a bridge amplifier.
VEX
R1
+5 V
R R
R R
VOUT
OPA333
R1
VREF
Figure 21. Single Op Amp Bridge Amplifier
A low-side current shunt monitor is shown in Figure 22. RN are operational resistors used to isolate the ADS1100
from the noise of the digital I2C bus. The ADS1100 is a 16-bit converter; therefore, a precise reference is
essential for maximum accuracy. If absolute accuracy is not required and the 5-V power supply is sufficiently
stable, the REF3130 can be omitted.
3V
+5 V
REF3130
Load
R1
4.99 kW
R2
49.9 kW
R6
71.5 kW
V
ILOAD
RSHUNT
1W
RN
56 W
OPA333
R3
4.99 kW
Stray Ground-Loop Resistance
R4
48.7 kW
ADS1100
R7
1.18 kW
RN
56 W
2
IC
(PGA Gain = 4)
FS = 3.0 V
NOTE: 1% resistors provide adequate common-mode rejection at small ground-loop errors.
Figure 22. Low-Side Current Monitor
12
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Additional application ideas are shown in Figure 23 through Figure 26.
RG
zener
RSHUNT
(1)
V+
(2)
R1
10 kW
MOSFET rated to
stand-off supply voltage
such as BSS84 for
up to 50 V.
OPA333
+5V
V+
Two zener
biasing methods
(3)
are shown.
Output
Load
RBIAS
RL
(1)
Zener rated for op amp supply capability (that is, 5.1 V for OPA333).
(2)
Current-limiting resistor.
(3)
Choose zener biasing resistor or dual NMOSFETs (FDG6301N, NTJD4001N, or Si1034)
Figure 23. High-Side Current Monitor
100 kW
1 MW
60 kW
3V
NTC
Thermistor
1 MW
OPA333
Figure 24. Thermistor Measurement
V1
-In
INA152
OPA333
R2
R1
2
5
6
VO
R2
3
1
OPA333
V2
+In
VO = (1 + 2R2 / R1) (V2 - V1)
Figure 25. Precision Instrumentation Amplifier
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Product Folder Links: OPA333 OPA2333
13
OPA333
OPA2333
SBOS351D – MARCH 2006 – REVISED NOVEMBER 2013
www.ti.com
+VS
R1
100 kW
fLPF = 150 Hz
C4
1.06 nF
1/2
OPA2333
RA
+VS
R2
100 kW
R6
100 kW
1/2
OPA2333
+VS
3
2
LL
7
INA321
(1)
4
5
R8
100 kW
+VS
dc
R3
100 kW
1/2
OPA2333
Wilson
LA
R14
1 MW
GTOT = 1 kV/V
R7
100 kW
ac
GINA = 5
R12
5 kW
6
+VS
1
C3
1 mF
VOUT
OPA333
R13
318 kW
GOPA = 200
+VS
1/2
OPA2333
VCENTRAL
C1
47 pF
(RA + LA + LL) / 3
fHPF = 0.5 Hz
(provides ac signal coupling)
1/2 VS
R5
390 kW
R9
20 kW
+VS
R4
100 kW
RL
1/2
OPA2333
Inverted
VCM
+VS
VS = +2.7 V to +5.5 V
1/2
OPA2333
BW = 0.5 Hz to 150 Hz
+VS
R10
1 MW
1/2 VS
C2
0.64 mF
R11
1 MW
fO = 0.5 Hz
(1)
Other instrumentation amplifiers can be used, such as the INA326, which has lower noise, but higher quiescent
current.
Figure 26. Single-Supply, Very Low Power, ECG Circuit
14
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OPA333
OPA2333
www.ti.com
SBOS351D – MARCH 2006 – REVISED NOVEMBER 2013
LAYOUT GUIDELINES
GENERAL LAYOUT GUIDELINES
Attention to good layout practices is always recommended. Keep traces short and when possible, use a printed
circuit board (PCB) ground plane with surface-mount components placed as close to the device pins as possible.
Place a 0.1-μF capacitor closely across the supply pins. Apply these guidelines throughout the analog circuit to
improve performance and provide benefits, such as reducing the electromagnetic interference (EMI)
susceptibility.
Operational amplifiers vary in susceptibility to radio frequency interference (RFI). RFI can generally be identified
as a variation in offset voltage or dc signal levels with changes in the interfering RF signal. The OPA333 is
specifically designed to minimize susceptibility to RFI and demonstrates remarkably low sensitivity compared to
previous generation devices. Strong RF fields may still cause varying offset levels.
DFN PACKAGE
The OPA2333 is offered in an DFN-8 package (also known as SON). The DFN is a QFN package with lead
contacts on only two sides of the bottom of the package. This leadless package maximizes board space and
enhances thermal and electrical characteristics through an exposed pad.
DFN packages are physically small, have a smaller routing area, improved thermal performance, and improved
electrical parasitics. Additionally, the absence of external leads eliminates bent-lead issues.
The DFN package can be easily mounted using standard PCB assembly techniques. See Application Reports
SLUA271, QFN/SON PCB Attachment and SCBA017, Quad Flatpack No-Lead Logic Packages, both available
for download at www.ti.com.
NOTE
The exposed leadframe die pad on the bottom of the package should be connected to V–
or left unconnected.
DFN LAYOUT GUIDELINES
Solder the exposed leadframe die pad on the DFN package to a thermal pad on the PCB. A mechanical drawing
showing an example layout is attached at the end of this data sheet. Refinements to this layout may be
necessary based on assembly process requirements. Mechanical drawings located at the end of this data sheet
list the physical dimensions for the package and pad. The five holes in the landing pattern are optional, and are
intended for use with thermal vias that connect the leadframe die pad to the heatsink area on the PCB.
Soldering the exposed pad significantly improves board-level reliability during temperature cycling, key push,
package shear, and similar board-level tests. Even with applications that have low-power dissipation, the
exposed pad must be soldered to the PCB to provide structural integrity and long-term reliability.
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15
OPA333
OPA2333
SBOS351D – MARCH 2006 – REVISED NOVEMBER 2013
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (May 2007) to Revision D
Page
•
Changed data sheet format to most current standard look and feel .................................................................................... 1
•
Added OPA2333 DFN-8 pinout to front page ....................................................................................................................... 1
•
Changed 2nd signal input terminals parameter in the Absolute Maximum Ratings from "voltage" to "current" (typo) ........ 2
•
Added OPA333 thermal information table ............................................................................................................................ 4
•
Added OPA2333 thermal information table .......................................................................................................................... 4
•
Added Table 1 ...................................................................................................................................................................... 6
16
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Product Folder Links: OPA333 OPA2333
PACKAGE OPTION ADDENDUM
www.ti.com
7-Feb-2015
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
OPA2333AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAUAG
Level-1-260C-UNLIM
-40 to 125
OBAQ
OPA2333AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA2333AIDRBR
ACTIVE
SON
DRB
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBRG4
ACTIVE
SON
DRB
8
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBT
ACTIVE
SON
DRB
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRBTG4
ACTIVE
SON
DRB
8
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
BQZ
OPA2333AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O2333A
OPA333AID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
OPA333AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
OPA333AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
OAXQ
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Feb-2015
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
OPA333AIDCKR
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKRG4
ACTIVE
SC70
DCK
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKT
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDCKTG4
ACTIVE
SC70
DCK
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
BQY
OPA333AIDG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
OPA333AIDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
OPA333AIDRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
-40 to 125
O333A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
7-Feb-2015
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA2333, OPA333 :
• Automotive: OPA2333-Q1, OPA333-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Sep-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
OPA2333AIDGKR
VSSOP
DGK
8
OPA2333AIDGKT
VSSOP
DGK
OPA2333AIDR
SOIC
D
OPA2333AIDRBR
SON
OPA2333AIDRBT
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
DRB
8
3000
330.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
SON
DRB
8
250
180.0
12.4
3.3
3.3
1.1
8.0
12.0
Q2
OPA333AIDBVR
SOT-23
DBV
5
3000
179.0
8.4
3.2
3.2
1.4
4.0
8.0
Q3
OPA333AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.3
3.2
1.4
4.0
8.0
Q3
OPA333AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA333AIDCKR
SC70
DCK
5
3000
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
OPA333AIDCKT
SC70
DCK
5
250
179.0
8.4
2.2
2.5
1.2
4.0
8.0
Q3
OPA333AIDR
SOIC
D
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
11-Sep-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2333AIDGKR
VSSOP
DGK
8
2500
364.0
364.0
27.0
OPA2333AIDGKT
VSSOP
DGK
8
250
364.0
364.0
27.0
OPA2333AIDR
SOIC
D
8
2500
367.0
367.0
35.0
OPA2333AIDRBR
SON
DRB
8
3000
367.0
367.0
35.0
OPA2333AIDRBT
SON
DRB
8
250
210.0
185.0
35.0
OPA333AIDBVR
SOT-23
DBV
5
3000
203.0
203.0
35.0
OPA333AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
OPA333AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
OPA333AIDCKR
SC70
DCK
5
3000
203.0
203.0
35.0
OPA333AIDCKT
SC70
DCK
5
250
203.0
203.0
35.0
OPA333AIDR
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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