DMN67D8LDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) max 60V 5.0Ω @ VGS = 10V 7.5Ω @ VGS = 5V ID max TA = +25°C 230mA 190mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Motor Control Power Management Functions Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 D1 SOT363 D2 G1 S1 S2 G2 D1 G2 G1 S2 S1 Top View Top View Pin out Equivalent Circuit Ordering Information (Note 4) Part Number DMN67D8LDW-7 DMN67D8LDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D2 G1 S1 7D8 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 7D8 YM 7D8 YM NEW PRODUCT NEW PRODUCT Product Summary S2 Date Code Key Year 2014 Code B Month Code Jan 1 2015 C Feb 2 DMN67D8LDW Document number: DS38034 Rev. 1 - 2 2016 D Mar 3 G2 D1 2017 E Apr 4 2018 F May 5 2019 G Jun 6 1 of 6 www.diodes.com 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D August 2015 © Diodes Incorporated DMN67D8LDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TA = +25°C Steady State TA = +70°C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) NEW PRODUCT NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V ID IS IDM Value 60 ±30 230 180 0.5 0.8 Unit V V Value 320 400 410 312 -55 to +150 Unit mW °C/W mW °C/W °C mA A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD RθJA PD RθJA TJ, TSTG Steady State Steady State (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1.0 ±100 V µA nA VGS = 0V, ID = 10µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 1.0 RDS(ON) — 2.5 5.0 7.5 V Static Drain-Source On-Resistance |Yfs| VSD 80 — — 1.5 3.2 — 0.78 — 1.5 mS V VDS = 10V, ID = 250µA VGS = 10V, ID = 0.5A VGS = 5V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF — — — — — — — — — — — — 22 4.1 2.5 120 361 821 162 116 2.8 3.0 7.6 5.6 — — — — — — — — — — — — pF pF pF Ω pC pC pC pC ns ns ns ns Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Ω Test Condition VDS = 25V, VGS = 0V f = 1.0MHz f = 1.0MHz , VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, ID = 0.2A, RL = 150, VGS = 10V, RG = 25 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN67D8LDW Document number: DS38034 Rev. 1 - 2 2 of 6 www.diodes.com August 2015 © Diodes Incorporated DMN67D8LDW 1 1.0 VDS=5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.8 VGS=4.5V VGS=5.0V VGS=3.5V 0.6 VGS=10.0V 0.4 0.2 VGS=2.5V 0.6 0.4 85℃ 125℃ 0.2 VGS=3.0V 25℃ 150℃ -55℃ 0.0 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 5 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.2 2 1.8 VGS=5V 1.6 VGS=10V 1.4 1.2 1 150℃ 3 125℃ 85℃ 2 25℃ -55℃ 1 0 5 6 4 ID=500mA 2 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS=10V 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 8 0.2 0.4 0.6 0.8 1 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4 1.5 10 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT 0.8 4 6 8 10 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 12 2 1.8 VGS=10V, ID=500mA 1.6 1.4 1.2 VGS=5V, ID=50mA 1 0.8 0.6 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN67D8LDW Document number: DS38034 Rev. 1 - 2 3 of 6 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature August 2015 © Diodes Incorporated 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3 2.5 VGS=5V, ID=50mA 2 1.5 VGS=10V, ID=500mA 1 2 ID=1mA 1.8 1.6 ID=250μA 1.4 1.2 0.5 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 35 1 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f=1MHz 0.8 0.6 VGS=0V, TJ=85℃ VGS=0V, TJ=125℃ 0.4 VGS=0V, TJ=150℃ 0.2 VGS=0V, TJ=25℃ VGS=0V, TJ=-55℃ 30 25 Ciss 20 15 10 Coss Crss 5 0 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 10 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) NEW PRODUCT NEW PRODUCT DMN67D8LDW 6 VDS=10V, ID=250mA 4 2 0 0.2 0.4 0.6 0.8 Qg (nC) Figure 11. Gate Charge DMN67D8LDW Document number: DS38034 Rev. 1 - 2 1 PW =1ms 1 0.1 PW =10ms PW =100ms 0.01 0.001 0 PW =100μs PW =1s TJ(MAX)=150℃ TC=25℃ PW =10s Single Pulse DC DUT on 1*MRP board VGS=10V 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 4 of 6 www.diodes.com August 2015 © Diodes Incorporated DMN67D8LDW 1 NEW PRODUCT NEW PRODUCT r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=405℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 8° All Dimensions in mm b D A2 c A1 e DMN67D8LDW Document number: DS38034 Rev. 1 - 2 L a 5 of 6 www.diodes.com August 2015 © Diodes Incorporated DMN67D8LDW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. NEW PRODUCT NEW PRODUCT C Dimensions C G X Y Y1 G Y1 Y Value (in mm) 0.650 1.300 0.420 0.600 2.500 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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