IRF IRGB440U Insulated gate bipolar transistor(vces=500v, @vge=15v, ic=22a) Datasheet

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PD - 9.782A
IRGB440U
INSULATED GATE BIPOLAR TRANSISTOR
Features
UltraFast IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 500V
VCE(sat) ≤ 3.0V
G
@VGE = 15V, I C = 22A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
500
40
22
80
80
±20
15
160
65
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-587
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.50
—
2.0 (0.07)
0.77
—
80
—
Units
°C/W
g (oz)
Revision 0
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IRGB440U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
500
—
—
V
VGE = 0V, I C = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.35 —
V/°C VGE = 0V, I C = 1.0mA
—
2.4
3.0
IC = 22A
V GE = 15V
—
2.8
—
V
IC = 40A
See Fig. 2, 5
—
2.4
—
IC = 22A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-11
— mV/°C VCE = VGE, IC = 250µA
6.6
13
—
S
VCE = 100V, I C = 22A
—
—
250
µA
VGE = 0V, V CE = 500V
—
— 1000
VGE = 0V, V CE = 500V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
55
11
19
27
13
100
56
0.37
0.18
0.55
27
15
137
100
0.96
7.5
1400
250
42
Max. Units
Conditions
83
IC = 22A
17
nC
VCC = 400V
See Fig. 8
29
VGE = 15V
—
TJ = 25°C
—
ns
IC = 22A, V CC = 400V
150
VGE = 15V, R G = 10Ω
100
Energy losses include "tail"
—
—
mJ
See Fig. 9, 10, 11, 14
0.70
—
TJ = 150°C,
—
ns
IC = 22A, V CC = 400V
—
VGE = 15V, R G = 10Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 10Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-588
To Order
Pulse width 5.0µs,
single shot.
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IRGB440U
50
Fo r bo th:
40
LO A D C U R R E N T (A )
Triangular w ave:
D uty c yc le: 50%
T J = 125° C
T s in k = 90°C
G ate d riv e as s pec ified
P ow er D issipation = 28W
C lam p v oltage:
80 % of rated
S quare w ave:
30
60% of rated
voltage
20
10
Ideal diodes
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
1000
100
IC , C o llector-to-E m itte r C urren t (A )
I C , C ollector-to-E mitter C urrent (A )
1000
TJ = 2 5°C
TJ = 1 50 °C
10
100
T J = 15 0°C
V G E = 15 V
20 µs P UL S E W ID TH
1
1
T J = 2 5°C
10
V C C = 1 00 V
5 µs P U L S E W ID TH
1
5
10
10
15
V G E , G ate -to-E m itter V olta ge (V )
V C E , C o llector-to-Em itter V oltage (V)
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-589
To Order
20
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IRGB440U
3.5
V G E = 15 V
V C E , C ollector-to-E mitter V oltage (V )
Maxim um D C Collector C urrent (A )
40
30
20
10
V G E = 15 V
80 µ s P U L S E W ID TH
I C = 4 4A
3.0
2.5
I C = 2 2A
2.0
I C = 1 1A
1.5
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z thJC )
1
D = 0.50
0.2 0
0.1
0.10
PD M
0.0 5
t
0 .0 2
0 .0 1
0.01
0.00001
1
t
S ING L E PU LS E
(T HE R MA L R ES PO N S E)
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-590
To Order
10
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IRGB440U
250 0
20
200 0
V G E , G ate-to-E m itter V oltage (V )
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
Cies
C, C apacitance (pF)
V C E = 4 00 V
I C = 2 2A
150 0
12
Coes
100 0
500
Cres
0
8
4
0
1
10
1 00
0
20
V C E , C o llector-to-Em itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
10
= 4 00 V
= 15 V
= 25 °C
= 2 2A
T o tal S w itc hing Los se s (m J)
Total S w itching Losses (m J)
0 .9
40
Q G , Total G ate C harge (nC )
0 .8
0 .7
0 .6
0 .5
R G = 10 Ω
V GE = 15 V
V CC = 4 00 V
I C = 44 A
I C = 22 A
1
I C = 1 1A
0.1
0
20
40
60
-60
R G , G ate R es istance (Ω )
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-591
To Order
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IRGB440U
RG
TC
VCC
VGE
1000
= 10 Ω
= 1 50°C
= 40 0V
= 1 5V
I , C o llec to r-to -E m itter C u rre nt (A )
2.0
1.0
VGGE E= 20 V
T J = 12 5°C
100
S A FE O P E R A TING A R E A
10
C
T o ta l S w itc hin g L o s s e s (m J )
3.0
1
0.0
0
10
20
30
40
50
1
10
1 00
V C E , C o llec to r-to -E m itte r V o lta g e (V )
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix A: Section D - page D-3
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220 AB
C-592
To Order
Section D - page D-12
1000
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