Previous Datasheet Index Next Data Sheet PD - 9.782A IRGB440U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve VCES = 500V VCE(sat) ≤ 3.0V G @VGE = 15V, I C = 22A E n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-220AB Absolute Maximum Ratings Parameter VCES IC @ T C = 25°C IC @ T C = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 500 40 22 80 80 ±20 15 160 65 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight C-587 To Order Min. Typ. Max. — — — — — 0.50 — 2.0 (0.07) 0.77 — 80 — Units °C/W g (oz) Revision 0 Previous Datasheet Index Next Data Sheet IRGB440U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) ∆VGE(th)/∆TJ gfe ICES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ Min. Typ. Max. Units Conditions 500 — — V VGE = 0V, I C = 250µA 20 — — V VGE = 0V, IC = 1.0A — 0.35 — V/°C VGE = 0V, I C = 1.0mA — 2.4 3.0 IC = 22A V GE = 15V — 2.8 — V IC = 40A See Fig. 2, 5 — 2.4 — IC = 22A, T J = 150°C 3.0 — 5.5 VCE = VGE, IC = 250µA — -11 — mV/°C VCE = VGE, IC = 250µA 6.6 13 — S VCE = 100V, I C = 22A — — 250 µA VGE = 0V, V CE = 500V — — 1000 VGE = 0V, V CE = 500V, T J = 150°C — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Min. — — — — — — — — — — — — — — — — — — — Typ. 55 11 19 27 13 100 56 0.37 0.18 0.55 27 15 137 100 0.96 7.5 1400 250 42 Max. Units Conditions 83 IC = 22A 17 nC VCC = 400V See Fig. 8 29 VGE = 15V — TJ = 25°C — ns IC = 22A, V CC = 400V 150 VGE = 15V, R G = 10Ω 100 Energy losses include "tail" — — mJ See Fig. 9, 10, 11, 14 0.70 — TJ = 150°C, — ns IC = 22A, V CC = 400V — VGE = 15V, R G = 10Ω — Energy losses include "tail" — mJ See Fig. 10, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) Repetitive rating; pulse width limited by maximum junction temperature. VCC=80%(V CES), VGE=20V, L=10µH, R G= 10Ω, ( See fig. 13a ) Pulse width ≤ 80µs; duty factor ≤ 0.1%. C-588 To Order Pulse width 5.0µs, single shot. Previous Datasheet Index Next Data Sheet IRGB440U 50 Fo r bo th: 40 LO A D C U R R E N T (A ) Triangular w ave: D uty c yc le: 50% T J = 125° C T s in k = 90°C G ate d riv e as s pec ified P ow er D issipation = 28W C lam p v oltage: 80 % of rated S quare w ave: 30 60% of rated voltage 20 10 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 1000 100 IC , C o llector-to-E m itte r C urren t (A ) I C , C ollector-to-E mitter C urrent (A ) 1000 TJ = 2 5°C TJ = 1 50 °C 10 100 T J = 15 0°C V G E = 15 V 20 µs P UL S E W ID TH 1 1 T J = 2 5°C 10 V C C = 1 00 V 5 µs P U L S E W ID TH 1 5 10 10 15 V G E , G ate -to-E m itter V olta ge (V ) V C E , C o llector-to-Em itter V oltage (V) Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics C-589 To Order 20 Previous Datasheet Index Next Data Sheet IRGB440U 3.5 V G E = 15 V V C E , C ollector-to-E mitter V oltage (V ) Maxim um D C Collector C urrent (A ) 40 30 20 10 V G E = 15 V 80 µ s P U L S E W ID TH I C = 4 4A 3.0 2.5 I C = 2 2A 2.0 I C = 1 1A 1.5 0 25 50 75 100 125 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) T C , C ase Tem perature (°C ) Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature Fig. 4 - Maximum Collector Current vs. Case Temperature T herm al Response (Z thJC ) 1 D = 0.50 0.2 0 0.1 0.10 PD M 0.0 5 t 0 .0 2 0 .0 1 0.01 0.00001 1 t S ING L E PU LS E (T HE R MA L R ES PO N S E) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 2 . P e a k T J = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-590 To Order 10 Previous Datasheet Index Next Data Sheet IRGB440U 250 0 20 200 0 V G E , G ate-to-E m itter V oltage (V ) V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 16 Cies C, C apacitance (pF) V C E = 4 00 V I C = 2 2A 150 0 12 Coes 100 0 500 Cres 0 8 4 0 1 10 1 00 0 20 V C E , C o llector-to-Em itter V oltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage VC C VG E TC IC 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 10 = 4 00 V = 15 V = 25 °C = 2 2A T o tal S w itc hing Los se s (m J) Total S w itching Losses (m J) 0 .9 40 Q G , Total G ate C harge (nC ) 0 .8 0 .7 0 .6 0 .5 R G = 10 Ω V GE = 15 V V CC = 4 00 V I C = 44 A I C = 22 A 1 I C = 1 1A 0.1 0 20 40 60 -60 R G , G ate R es istance (Ω ) -40 -20 0 20 40 60 80 100 120 140 160 TC , C ase Tem perature (°C ) W Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-591 To Order Previous Datasheet Index Next Data Sheet IRGB440U RG TC VCC VGE 1000 = 10 Ω = 1 50°C = 40 0V = 1 5V I , C o llec to r-to -E m itter C u rre nt (A ) 2.0 1.0 VGGE E= 20 V T J = 12 5°C 100 S A FE O P E R A TING A R E A 10 C T o ta l S w itc hin g L o s s e s (m J ) 3.0 1 0.0 0 10 20 30 40 50 1 10 1 00 V C E , C o llec to r-to -E m itte r V o lta g e (V ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix A: Section D - page D-3 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220 AB C-592 To Order Section D - page D-12 1000