Fairchild BC859B Switching and amplifier application Datasheet

BC856/857/858/859/860
BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
3
2
1
SOT-23
1. Base 2. Emitter 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
VCEO
Parameter
Value
Units
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
ICBO
Parameter
Collector Cut-off Current
Test Condition
VCB= -30V, IE=0
Min.
110
Typ.
Max.
-15
-300
-650
hFE
DC Current Gain
VCE= -5V, IC= -2mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-90
-250
VBE (sat)
Base-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-700
-900
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA
f=100MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
NF
Noise Figure
©2002 Fairchild Semiconductor Corporation
: BC856/857/858
: BC859/860
: BC859
: BC860
VCE= -5V, IC= -200µA
f=1KHz, RG=2KΩ
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000Hz
-600
Units
nA
800
-660
mV
mV
-750
-800
150
2
1
1.2
1.2
mV
mV
mV
mV
MHz
6
pF
10
4
4
2
dB
dB
dB
dB
Rev. A2, August 2002
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
Marking Code
Type
856A
856B
856C
857A
857B
857C
858A
858B
858C
Mark
9AA
9AB
9AC
9BA
9BB
9BC
9CA
9CB
9CC
Type
859A
859B
859C
860A
860B
860C
Mark
9DA
9DB
9DC
9EA
9EB
9EC
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
BC856/857/858/859/860
hFE Classification
BC856/857/858/859/860
Typical Characteristics
-50
1000
IB = - 400µ A
IB = - 350µA
-40
VCE = - 5V
IB = - 300µA
-35
IB = - 250µA
-30
IB = - 200µA
-25
IB = - 150µA
-20
IB = - 100µA
-15
-10
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
100
IB = - 50µA
-5
10
-0.1
-0
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
Figure 1. Static Characteristic
-100
Figure 2. DC current Gain
-10
-100
-1
IC[mA], COLLECTOR CURRENT
IC = 10 IB
V BE(sat)
-0.1
VCE(sat)
-0.01
-0.1
VCE = - 5V
-10
-1
-0.1
-1
-10
-100
-0.2
-0.4
IC[mA], COLLECTOR CURRENT
1
-1
-10
-100
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
-0.8
-1.0
-1.2
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz IE=0
10
-0.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Cob[pF], CAPACITANCE
-10
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1
1000
f=1MHz IE=0
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, August 2002
BC856/857/858/859/860
Package Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
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Obsolete
Not In Production
This datasheet contains specifications on a product
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The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1
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