SIPMOS® Power Transistor BUZ 205 ● N channel ● Enhancement mode ● FREDFET Type VDS ID RDS (on) Package 1) Ordering Code BUZ 205 400 V 6.0 A 1.0 Ω TO-220 AB C67078-A1401-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 35 ˚C ID 6.0 Pulsed drain current, TC = 25 ˚C ID puls 24 Drain-source voltage VDS 400 Drain-gate voltage, RGS = 20 kΩ VDGR 400 Gate-source voltage VGS ± 20 Power dissipation, TC = 25 ˚C Ptot 75 W Operating and storage temperature range Tj , Tstg – 55 ... + 150 ˚C Thermal resistance, chip-case Rth JC ≤ 1.67 DIN humidity category, DIN 40 040 E IEC climatic category, DIN IEC 68-1 55/150/56 1) See chapter Package Outlines. Semiconductor Group 508 Unit A V K/W – BUZ 205 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static characteristics Drain-source breakdown voltage VGS = 0 V, ID = 0.25 mA V(BR) DSS 400 – – Gate threshold voltage VGS = VDS , ID = 1 mA VGS (th) 2.1 4.0 4.0 Zero gate voltage drain current IDSS VDS = 400 V, VGS = 0 V Tj = 25 ˚C Tj = 125 ˚C V µA – – 20 100 250 1000 IGSS – 10 100 nA RDS (on) – 0.9 1.0 Ω gfs 1.7 2.9 – S Ciss – 1500 2000 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss – 120 180 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss – 35 60 td (on) Turn-on time ton , (ton = td (on) + tr) VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t – 30 45 – 40 60 Turn-off time toff , (toff = td (off) + tf) td (off) VDD = – 30 V, VGS = 10 V, ID = 2.7 A, RGS = 50 Ω t f – 110 140 – 50 65 Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-source on-resistance VGS = 10 V, ID = 4.0 A Dynamic characteristics Forward transconductance VDS ≥ 2 x ID x RDS(on)max , ID = 4.0 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz r Semiconductor Group 509 ns BUZ 205 Electrical Characteristics (cont’d) at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Reverse diode Continuous reverse drain current TC = 25 ˚C IS – – 6.0 Pulsed reverse drain current TC = 25 ˚C ISM – – 24 Diode forward on-voltage VSD – 1.3 1.6 V trr – 180 250 ns Qrr – 0.65 1.2 µC A IS = 12 A, VGS = 0 V Reverse recovery time VR = 100 V, IF = IDR , diF / dt = 100 A/µs Reverse recovery charge VR = 100 V, IF = IDR , diF / dt = 100 A/µs Semiconductor Group 510 BUZ 205 Characteristics at Tj = 25 ˚C, unless otherwise specified. Total power dissipation Typ. output characteristics Ptot = f (TC) ID = f (VDS) parameter: tp = 80 µs Safe operating area ID = f (VDS) parameter: D = 0.01, TC = 25 ˚C Semiconductor Group Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs, VDS = 25 V 511 BUZ 205 Typ. drain-source on-resistance RDS (on) = f (ID) parameter: VGS Drain-source on-resistance RDS (on) = f (Tj) parameter: ID = 4.0 A, VGS = 10 V, (spread) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs Gate threshold voltage VGS (th) = f (Tj) parameter: VGS = VDS , ID = 1 mA, (spread) Semiconductor Group 512 BUZ 205 Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz Drain current ID = f (TC) parameter: VGS ≥ 10 V Forward characteristics of reverse diode IF = f (VSD) parameter: tp = 80 µs, Tj Transient thermal impedance Z th JC = f (tp) parameter: D = tp / T Semiconductor Group 513