MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Capability Specified at Elevated Temperature • Internal Source−to−Drain Diode Designed to Replace External Zener • POWER FET 2.0 AMPERES, 250 VOLTS RDS(on) = 3.5 W 4 1 2 CASE 318E−04, STYLE 3 TO−261AA 3 Transient Suppressor − Absorbs High Energy in the Avalanche Mode Source−to−Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode 2,4 D 1 G S MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 3 Symbol Value Unit Drain−to−Source Voltage VDSS 250 Vdc Drain−to−Gate Voltage, RGS = 1.0 mW VDGR 250 Vdc Gate−to−Source Voltage — Continuous VGS ± 20 Vdc VGSM ± 40 Vdc ID ID 2.0 0.6 7.0 Adc PD 0.77 6.2 1.0 1.2 0.8 Watts mW/°C Watts TJ, Tstg −55 to 150 °C Rating Gate−to−Source Voltage — Single Pulse (tp ≤ 50 mS) Drain Current — Continuous @ TC = 25°C Drain Current — Continuous @ TC = 100°C Drain Current — Single Pulse (tp ≤ 10 mS) IDM Total Power Dissipation @ TC = 25°C Derate above 25°C Total PD @ TA = 25°C mounted on 1″ Sq. Drain Pad on FR−4 Bd. Material Total PD @ TA = 25°C mounted on 0.7″ Sq. Drain Pad on FR−4 Bd. Material Total PD @ TA = 25°C mounted on min. Drain Pad on FR−4 Bd. Material Operating and Storage Temperature Range Apk UNCLAMPED DRAIN−TO−SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain−to−Source Avalanche Energy — Starting TJ = 25°C (VDD = 80 V, VGS = 10 V, Peak IL= 4.0 Apk, L = 3.0 mH, RG = 25 Ω) EAS mJ 26 THERMAL CHARACTERISTICS — Junction−to−Ambient on 1″ Sq. Drain Pad on FR−4 Bd. Material — Junction−to−Ambient on 0.7″ Sq. Drain Pad on FR−4 Bd. Material — Junction−to−Ambient on min. Drain Pad on FR−4 Bd. Material Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds RθJA 90 103 162 °C/W TL 260 °C This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. © Semiconductor Components Industries, LLC, 2013 May, 2013 − Rev. 2 1 Publication Order Number: MMFT2N25E/D MMFT2N25E ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 250 — — 324 — — — — — — 10 100 — — 100 2.0 — 2.8 5.7 4.0 — — 2.1 3.5 — — — — 8.40 7.35 0.44 1.2 — Ciss — 137 190 Coss — 30 40 Crss — 7.0 10 td(on) — 9.2 20 tr — 6.6 10 td(off) — 13 30 Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) Temperature Coefficient (Positive) BVDSS Zero Gate Voltage Drain Current (VDS = 250 V, VGS = 0) (VDS = 250 V, VGS = 0, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0) IGSS Vdc V/°C μAdc nAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mA) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (VGS = 10 V, ID = 1.0 Adc) RDS(on) Drain−to−Source On−Voltage (VGS = 10 V, ID = 2.0 A) (VGS = 10 V, ID = 1.0 A, TJ = 125°C) VDS(on) Forward Transconductance (VDS = 8.0 V, ID = 2.0 Adc) gFS Vdc mV/°C Ohms Vdc mhos DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz) Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS pF (1) Turn−On Delay Time (VDS = 125 V, ID = 2.0 A, RG = 9.1 Ohms, VGS = 10 V) Rise Time Turn−Off Delay Time Fall Time tf — 8.5 20 QT — 4.7 10 Q1 — 1.3 — Q2 — 3.2 — Q3 — 2.3 — IS = 2.0 A, VGS = 0 V VSD — 0.94 2.0 IS = 2.0 A, VGS = 0 V, TJ = 125°C VSD — 0.83 — trr — 104 — ta — 63 — tb — 41 — qrr — 0.365 — Gate Charge (VDS = 200 V, ID = 2.0 A, VGS = 10 V) ns nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time (IS = 2.0 A, dlS/dt = 100 A/μs) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width ≤ 300 μS, Duty Cycle ≤ 2%. http://onsemi.com 2 Vdc nS mC MMFT2N25E 4.0 4.0 VGS = 10 V ID , DRAIN CURRENT (AMPS) 3.5 9.0 V 3.0 2.5 2.0 6.0 V 1.5 1.0 5.0 V 0.5 3.0 -55°C 25°C 2.5 2.0 1.5 1.0 0 5.0 0 10 15 20 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 7.0 VGS = 10 V 6.0 TJ = 100°C 5.0 25°C 4.0 3.0 -55°C 2.0 1.0 0 1.0 0 2.0 3.0 4.0 R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 7.0 TJ = 25°C 5.0 4.0 VGS = 10 V 15 V 3.0 2.0 1.0 0 0 1.0 0.5 1.5 2.0 2.5 3.0 3.5 ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Drain Current and Temperature Figure 4. On−Resistance versus Drain Current and Gate Voltage 100 2.5 7 6.0 ID, DRAIN CURRENT (AMPS) VGS = 0 V VGS = 10 V ID = 1.0 A 4 TJ = 125°C 2.0 IDSS , LEAKAGE (nA) R DS(on), DRAIN-TO-SOURCE RESISTANCE (OHMS) TJ = 100°C 0.5 0 R DS(on) , DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 3.5 8.0 V 7.0 V ID , DRAIN CURRENT (AMPS) TJ = 25°C 1.5 1.0 100°C 10 0.5 0 -50 1.0 -25 0 25 50 75 100 125 150 0 50 100 150 200 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation versus Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 2 350 VGS = 0 V TJ = 25°C Ciss 300 C, CAPACITANCE (pF) VDS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) MMFT2N25E 250 200 Crss Ciss 150 100 50 Coss Crss 0 -10 0 -5.0 VGS 5.0 10 20 15 12 250 QT 10 8.0 Q1 100 4.0 50 2.0 Q3 25 2.0 0 4.0 VDS 8.0 6.0 0 10 QG, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 100 2.0 IS , SOURCE CURRENT (AMPS) TJ = 25°C ID = 2.0 A VDD = 125 V VGS = 10 V t, TIME (ns) TJ = 25°C ID = 2.0 A 0 Figure 7. Capacitance Variation td(off) 10 tf tr td(on) 1.0 TJ = 25°C VGS = 0 V 1.5 1.0 0.5 0 1.0 10 0.3 100 0.5 0.4 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (OHMS) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 1 60 VGS = 20 V SINGLE PULSE TC = 25°C EAS , SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 10 ID, DRAIN CURRENT (AMPS) 150 Q2 6.0 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.0 200 VGS VDS 100 ms 1.0 ms 10 ms 0.1 dc 0.01 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT ID = 2.0 A 50 40 30 20 10 0 0.001 0.1 1.0 10 100 1000 25 50 75 100 125 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 MMFT2N25E r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E-5 1.0E-4 1.0E-3 1.0E-2 1.0E-1 1.0E+0 t, TIME (seconds) Figure 13. Thermal Response http://onsemi.com 5 1.0E+1 1.0E+2 1.0E MMFT2N25E PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 4 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM 0.064 A 1.50 1.63 1.75 0.060 A1 0.02 0.06 0.10 0.001 0.002 0.030 b 0.60 0.75 0.89 0.024 0.121 b1 2.90 3.06 3.20 0.115 0.012 c 0.24 0.29 0.35 0.009 D 6.30 6.50 6.70 0.249 0.256 0.138 E 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.091 e1 0.037 0.85 0.94 1.05 0.033 L 0.20 −−− −−− 0.008 −−− L1 1.50 1.75 2.00 0.060 0.069 HE 6.70 7.00 7.30 0.264 0.276 0° 10° 0° − − q STYLE 3: PIN 1. 2. 3. 4. L1 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° GATE DRAIN SOURCE DRAIN SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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