FABS202 THRU FABS210 HD AB60 ABS Plastic-Encapsulate Bridge Rectifier Features ●Io 2A ABS ●VRRM 50V-1000V ●High surge current capability ●Glass passivated chip ● Polarity: Color band denotes cathode Applications ● General purpose 1 phase Bridge rectifier applications Marking ● FABS2X X : From 02 To 10 Item Repetitive Peak Reverse Voltage Symbol Unit Conditions 202 204 FABS 206 208 210 VRRM V 200 400 600 800 1000 V RMS V 140 280 420 560 700 Average Rectified Output Current IO A Surge(Nonrepetitive)Forward Current IFSM A Maximum RMS Voltage Current Squared Time 60Hz sine wave, R-load,Ta=35℃ On alumina substrate 2.0 60HZ sine wave, 1 cycle, Tj=25℃ 50 A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode 2 It 3.7 Storage Temperature Tstg ℃ -55 ~+150 Junction Temperature Tj ℃ -55 ~+150 Item Symbol Unit Peak Forward Voltage VF V IF =2.0A Maximum reverse recovery time trr ns IF=0.5A,IR=1.0A,Irr =0.25A Peak Reverse Current Thermal Resistance(Typical) IRRM1 IRRM2 μA RθJ-A Test Condition VRM=VRRM 202 204 FABS 206 208 210 1.3 150 250 Ta =25℃ 5 Ta =125℃ 50 Between junction and ambient 62.5 Between junction and terminal 25 500 ℃/W RθJ-L High Diode Semiconductor 1 Typical Characteristics FIG2:Surge Forward Current Capadility 2.0 70 sine wave 0 60 on alumina substrate IFSM IFSM(A) Io(A) FIG1:Io-Ta Curve 2.4 8.3ms 8.3ms 1cycle 1.6 50 sine wave R-load with heatsink 1.2 non-repetitive Tj=25℃ 40 30 0.8 20 0.4 10 0 0 40 80 0 160 Ta(℃ ) 120 1 IR(uA) FIG.3: TYPICAL FORWARD CHARACTERISTICS IF(A) 20 5 2 10 20 50 100 Number of Cycles FIG4:Typical Reverse Characteristics 100 Tj=150℃ 10 4.0 10 2.0 1.0 1.0 0.4 0.2 Tj=25℃ 0.1 0.1 TJ=25 ℃ Pulse width=300us 1% Duty Cycle 0.02 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 VF(V) High Diode Semiconductor 60 80 100 Voltage(%) 2 0.010(0.25) 0.059(1.5) 0~10 O 0.006(0.15) 0.002(0.05) 0.006(0.15) 0.268(6.8) 0.244(6.2) 0.169(4.3) 0.177(4.5) ABS 0.008(0.2) 0.174(4.4) ----- 0.21(5.4) 0.193(4.9) 0.056(1.42) 0.048(1.22) 0.059(1.50) MAX. 0.006(0.15) 0.002(0.05) 0.150(3.8) 0.033(0.85) 0.022(0.55) Dimensions in inches and (millimeters) ABS 0.225(5.72) 0.157(4.00) 0.035(0.90) JSHD JSHD High Diode Semiconductor 3 Reel Taping Specifications For Surface Mount Devices-ABS High Diode Semiconductor 4