BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a MiniMELF case with type designation LL41 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BAT41 Ordering code Type Marking Remarks BAT41-TR or BAT41-TAP BAT41 Tape and Reel/Ammopack / Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value VRRM 100 V IF 1001) mA tp < 1 s, δ < 0.5 IFRM 3501) mA tp = 10 ms IFSM 7501) mA Ptot 1) mW Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation 1) Tamb = 65 °C 200 Unit Valid provided that electrodes are kept at ambient temperature Document Number 85659 Rev. 1.6, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 BAT41 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Symbol Value Unit RthJA 3001) K/W Tj 125 °C Ambient operating temperature range Tamb - 65 to + 125 °C Storage temperature range Tstg - 65 to + 150 °C Junction temperature 1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage2) Leakage current2) Forward voltage2) Diode capacitance 2) Test condition Symbol Min. Typ. IR = 100 µA V(BR) 100 110 VR = 50 V, Tj = 25 °C IR 100 nA VR = 50 V, Tj = 100 °C IR 20 µA IF = 1 mA VF 450 mV 1000 mV IF = 200 mA VF VR = 1 V, f = 1 MHz CD 400 Max. Unit V 2 pF Pulse test, tp = 300 µs Typical Characteristics Tamb = 25 °C, unless otherwise specified 100000 IR - Reverse Leakage Current (nA) Ptot- Power Dissipation (mW) 250 200 150 100 50 Tj = 125 °C 10000 20225 50 100 Tamb - Ambient Temperature (°C) www.vishay.com 2 50 °C 100 25 °C 10 1 150 Figure 1. Admissible Power Dissipation vs. Ambient Temperature 75 °C 1000 0 0 100 °C 20226 0 10 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) Figure 2. Typical Reverse Characteristics For technical questions within your region, please contact one of the following: Document Number 85659 [email protected], [email protected], [email protected] Rev. 1.6, 12-Aug-10 BAT41 Vishay Semiconductors 1000 5.0 CD - Diode Capacitance (pF) I F - Forward Current (mA) 4.5 100 T j = 125 ° C 10 1 - 40 °C 0.1 25 °C 0.01 0 200 18641 400 600 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 800 1000 0 1200 VF - Forward Voltage (mV) 20227 Figure 3. Typical Forward Characteristics 5 10 15 20 25 30 35 40 VR - Reverse Voltage (V) Figure 4. Typical Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO-35 3.9 (0.154) max. 26 (1.024) min. 1.5 (0.059) 26 (1.024) min. 1.7 (0.067) 0.55. (0.022) max Cathode identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85659 Rev. 1.6, 12-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 DO35 Vishay Semiconductors DO35 Package Dimensions in mm (Inches) 3.9 max. (0.154) 26 min. (1.024) 1.5 (0.059) 26 min. (1.024) 1.7 (0.067) 0.55 max. (0.022) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 84001 Rev. 1.3, 12-Feb-07 www.vishay.com 1 DO35 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 2 Document Number 84001 Rev. 1.3, 12-Feb-07 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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