MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE CM100DY-24NF ¡IC ................................................................... 100A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Tc measured point (Base plate) 94 23 23 17 C1 12 12 G1 E1 12 2-φ6.5 MOUNTING HOLES 4 13 48 20 (14) E2 18 C2E1 E2 G2 4 17 3-M5 NUTS 4 80±0.25 7 16 C2E1 E2 21.2 +0.1 29 –0.5 LABEL C1 G1 E1 16 7.5 7 E2 G2 TAB #110. t=0.5 16 CIRCUIT DIAGRAM Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight Conditions G-E Short C-E Short DC, TC’ = 113°C*3 Pulse Ratings 1200 ±20 100 200 100 200 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 (Note 2) Pulse TC = 25°C (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value Unit V V A A A A W °C °C V N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 10mA, VCE = 10V 6 7 8 V IGES Gate leakage current Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage — — — — — — — — — — — — — — — — — — 3.1 — 1.8 2.0 — — — 675 — — — — — 5.0 — — — 0.07 — — 0.5 2.5 — 23 2 0.45 — 120 80 450 350 150 — 3.2 0.19 0.35 — µA VCE(sat) VGE = VGES, VCE = 0V Tj = 25°C IC = 100A, VGE = 15V Tj = 125°C Thermal resistance*1 Contact thermal resistance Thermal resistance VCE = 10V VGE = 0V VCC = 600V, IC = 100A, VGE = 15V VCC = 600V, IC = 100A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 100A IE = 100A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips External gate resistance 0.13*3 31 mA V nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 13 12 11 120 80 10 40 9 0 4 2 6 8 10 4 VGE = 15V 3 2 1 Tj = 25°C Tj = 125°C 0 0 100 50 150 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 103 Tj = 25°C 7 8 6 4 IC = 100A IC = 200A 2 EMITTER CURRENT IE (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C 15 160 0 CAPACITANCE Cies, Coes, Cres (nF) VGE = 20V 5 3 2 102 7 5 3 2 Tj = 25°C Tj = 125°C IC = 40A 0 6 8 10 12 14 16 18 101 20 1 2 3 4 5 EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 102 103 7 5 7 5 3 2 3 2 Cies 101 7 5 3 2 Coes 100 7 5 3 2 0 GATE-EMITTER VOLTAGE VGE (V) Cres VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 200 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) tf td(off) 102 7 5 3 2 td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 101 7 5 3 2 100 1 10 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT IC (A) Mar.2003 MITSUBISHI IGBT MODULES CM100DY-24NF TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 Irr 102 trr 7 5 3 2 101 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 103 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25°C 10–1 10–1 7 5 3 2 7 5 3 2 IGBT part: 10–2 Per unit base = 7 5 Rth(j–c) = 0.19°C/W FWDi part: 3 Per unit base = 2 Rth(j–c) = 0.35°C/W –3 10 10–2 7 5 3 2 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 100A VCC = 400V 16 VCC = 600V 12 8 4 0 0 200 400 600 800 1000 GATE CHARGE QG (nC) Mar.2003