ON BAW56LT1G Dual switching diode common anode Datasheet

BAW56LT1
Preferred Device
Dual Switching Diode
Common Anode
Features
• Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Symbol
Value
Unit
Reverse Voltage
VR
70
V
Forward Current
IF
200
mA
IFM(surge)
500
mA
4
A
Symbol
Max
Unit
PD
225
mW
Rating
Peak Forward Surge Current
Non−Repetitive Peak Forward Current
t = 1 ms (Note 3)
CATHODE
1
ANODE
3
2
CATHODE
IFSM
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)
TA = 25°C
Derate above 25°C
SOT−23 (TO−236)
CASE 318
STYLE 12
1
2
1.8
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,
(Note 2) TA = 25°C
Derate above 25°C
PD
300
mW
2.4
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417
°C/W
TJ, Tstg
−55 to
+150
°C
Junction and Storage Temperature
3
MARKING DIAGRAM
A1 M G
G
1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
3. Square Wave; Tj = 25°C.
A1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
BAW56LT1
SOT−23
3000 / Tape & Reel
SOT−23
(Pb−Free)
3000 / Tape & Reel
SOT−23
10,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
BAW56LT1G
BAW56LT3
BAW56LT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future
use and best overall value.
© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1
Publication Order Number:
BAW56LT1/D
BAW56LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Reverse Breakdown Voltage
(I(BR) = 100 mA)
Symbol
Min
Max
Unit
V(BR)
70
−
V
−
−
−
30
2.5
50
−
2.0
−
−
−
−
715
855
1000
1250
−
6.0
Reverse Voltage Leakage Current
mA
IR
(VR = 25 V, TJ = 150°C)
(VR = 70 V)
(VR = 70 V, TJ = 150°C)
Diode Capacitance
CD
pF
(VR = 0 V, f = 1.0 MHz)
Forward Voltage
VF
mV
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
trr
RL = 100 W
ns
820 W
+10 V
2.0 k
100 mH
tr
0.1 mF
IF
tp
t
IF
trr
10%
t
0.1 mF
90%
D.U.T.
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
IR
INPUT SIGNAL
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
http://onsemi.com
2
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
BAW56LT1
Curves Applicable to Each Cathode
10
IR , REVERSE CURRENT (μA)
TA = 85°C
10
TA = −40°C
1.0
0.1
TA = 25°C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 150°C
TA = 25°C
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Leakage Current
1.75
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
1.5
1.25
1.0
0.75
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
http://onsemi.com
3
8
50
BAW56LT1
PACKAGE DIMENSIONS
SOT−23−3 (TO−236)
CASE 318−08
ISSUE AL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
3
1
E HE
2
e
DIM
A
A1
b
c
D
E
e
L
HE
A
b
A1
C
L
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
STYLE 12:
PIN 1. CATHODE
2. CATHODE
3. ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAW56LT1/D
Similar pages