MMDT2222V 40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT563 Features Mechanical Data BVCEO > 40V Epitaxial Planar Die Construction Ideal for Medium Power Amplification and Switching Ultra-Small Surface Mount Package Complementary PNP Type: MMDT2907V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Finish. Solderable per MIL-STD202, Method 208 Weight: 0.003 grams (Approximate) SOT563 Device Schematic Top View Bottom View Top View Ordering Information (Note 4) Product MMDT2222V-7 Notes: Status Active Compliance AEC-Q101 Marking KAT Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT563 KAT = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) KAT YM Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb 2 MMDT2222V Document number: DS30563 Rev. 5 - 2 Mar 3 2015 C Apr 4 2016 D May 5 Jun 6 1 of 6 www.diodes.com 2017 E Jul 7 2018 F Aug 8 Sep 9 2019 G Oct O 2020 H Nov N Dec D February 2016 © Diodes Incorporated MMDT2222V Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Symbol VCBO VCEO VEBO IC Value 75 40 6.0 600 Unit V V V mA Symbol PD RθJA TJ, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage and Temperature Range ESD Ratings (Note 6) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 6. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristic and Derating Information MMDT2222V Document number: DS30563 Rev. 5 - 2 2 of 6 www.diodes.com February 2016 © Diodes Incorporated MMDT2222V Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 7) Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO 75 40 6.0 Collector-Base Cut-Off Current ICBO 10 Collector Cut-Off Current Emitter-Base Cut-Off Current Base Cut-Off Current ON CHARACTERISTICS (Note 7) ICEX IEBO IBL 10 10 20 V V V nA µA nA nA nA IC = 10µA, IE = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCB = 60V, IE = 0 VCB = 60V, IE = 0, TA = +150°C VCE = 60V, VBE(OFF) = 3.0V VEB = 3V, IC = 0 VCE = 60V, VBE(OFF) = 3.0V hFE 35 50 75 100 40 50 35 300 IC = 100A, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(sat) 0.3 1.0 V Base-Emitter Saturation Voltage VBE(sat) 0.6 1.2 2.0 V Cobo Cibo 8.0 25 pF pF Current Gain-Bandwidth Product fT 300 MHz Noise Figure NF 4.0 dB td tr ts tf 10 25 225 60 ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Note: Test Condition IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA VCB = 10V, f = 1.0MHz, IE = 0 VEB = 0.5V, f = 1.0MHz, IC = 0 VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 100μA, RS = 1.0kΩ f = 1.0kHz VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. MMDT2222V Document number: DS30563 Rev. 5 - 2 3 of 6 www.diodes.com February 2016 © Diodes Incorporated MMDT2222V Typical Electrical Characteristics MMDT2222V Document number: DS30563 Rev. 5 - 2 (@TA = +25°C, unless otherwise specified.) 4 of 6 www.diodes.com February 2016 © Diodes Incorporated MMDT2222V Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. A B C D G M K SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm H L Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. C2 Z C2 Dimensions Z G X Y C1 C2 C1 G Y SOT563 2.2 1.2 0.375 0.5 1.7 0.5 X MMDT2222V Document number: DS30563 Rev. 5 - 2 5 of 6 www.diodes.com February 2016 © Diodes Incorporated MMDT2222V IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com MMDT2222V Document number: DS30563 Rev. 5 - 2 6 of 6 www.diodes.com February 2016 © Diodes Incorporated