HMC365 v04.1007 FREQUENCY DIVIDERS - CHIP 1 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Typical Applications Features Prescaler for DC to Ku Band PLL Applications: Ultra Low SSB Phase Noise: -151 dBc/Hz • Satellite Communication Systems Wide Bandwidth • Fiber Optic Output Power: 5 dBm • Piont-to-Point and Point-to-Multi-Point Radios Single DC Supply: +5V • VSAT Small Size: 1.30 x 0.69 x 0.1 mm Functional Diagram General Description The HMC365 is a low noise Divide-by-4 Static Divider with InGaP GaAs HBT technology that has a small size of 1.30 x 0.69 mm. This device operates from DC (with a square wave input) to 13 GHz input frequency with a single +5V DC supply. The low additive SSB phase noise of -151 dBc/Hz at 100 kHz offset helps the user maintain good system noise performance. Electrical Specifi cations, TA = +25° C, 50 Ohm System, Vcc = 5V Parameter Conditions Maximum Input Frequency Minimum Input Frequency Input Power Range Min. Typ. 13 14 Sine Wave Input. [1] Max. Units 0.2 0.5 GHz GHz Fin = 1 to 10 GHz -15 >-20 +10 dBm Fin = 10 to 12 GHz -10 >-15 +3 dBm +3 Fin = 12 to 13 GHz -5 >-8 Output Power [2] Fin = 13 GHz 2 5 Reverse Leakage Both RF Outputs Terminated 45 dB Pin = 0 dBm, Fin = 6 GHz -151 dBc/Hz Pin = 0 dBm, Fout = 882 MHz 100 ps 110 mA SSB Phase Noise (100 kHz offset) Output Transition Time Supply Current (Icc) [2] [1] Divider will operate down to DC for square-wave input signal. [2] When operated in high power mode (pin 8 connected to ground). 1 - 26 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com dBm dBm HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz 20 20 10 10 0 Recommended Operating Window -10 -20 0 Min Pin +25 C Max Pin +25 C Min Pin +85 C Max Pin +85 C Min Pin -55 C Max Pin -55 C -10 -20 -30 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 INPUT FREQUENCY (GHz) 10 9 8 7 6 5 4 3 2 1 0 -1 -2 -3 -4 -5 7 8 9 10 11 12 13 14 15 0 +25 C +85 C -55 C -20 -40 -60 -80 -100 -120 -140 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -160 2 10 3 Output Harmonic Content, Pin= 0 dBm, T= 25 °C 4 10 INPUT FREQUENCY (GHz) 5 10 10 6 10 7 10 OFFSET FREQUENCY (Hz) Reverse Leakage, Pin= 0 dBm, T= 25 °C 0 0 3rd Harmonic -10 -10 POWER LEVEL (dBm) OUTPUT LEVEL (dBm) 6 SSB Phase Noise Performance, Pin= 0 dBm, T= 25 °C SSB PHASE NOISE (dBc/Hz) OUTPUT POWER (dBm) Output Power vs. Temperature 5 INPUT FREQUENCY (GHz) 1 FREQUENCY DIVIDERS - CHIP Input Sensitivity Window vs. Temperature INPUT POWER (dBm) INPUT POWER (dBm) Input Sensitivity Window, T= 25 °C -20 Pfeedthru -30 -40 Both Output Ports Terminated One Output Port Terminated -20 -30 -40 -50 2nd Harmonic -50 -60 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 INPUT FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 27 HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Output Voltage Waveform, Pin= 0 dBm, Fout= 882 MHz, T= 25 °C 700 600 500 400 300 200 100 0 -100 -200 -300 -400 -500 -600 -700 22.7 22.9 23.1 23.3 23.5 23.7 23.9 24.1 24.3 24.5 24.7 AMPLITUDE (mV) FREQUENCY DIVIDERS - CHIP 1 Absolute Maximum Ratings RF Input (Vcc = +5V) +13 dBm Vcc +5.5V VLogic Vcc -1.6V to Vcc -1.2V Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS TIME (nS) Typical Supply Current vs. Vcc Vcc (V) Icc (mA) 4.75 94 5.0 110 5.25 118 Note: Divider will operate over full voltage range shown above Outline Drawing Die Packaging Information [1] Standard Alternate WP-8 [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 - 28 NOTES: 1. ALL DIMENSIONS IN INCHES (MILLIMETERS) 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004 (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004 (0.100) SQUARE 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Pad Number Function Description 1 IN RF Input 180° out of phase with pad 3 for differential operation. AC ground for single ended operation. 2 IN RF Input must be DC blocked. 3, 4, 5 Vcc Supply Voltage 5V ±0.25V can be applied to pad 3, 4, or 5. 6 OUT Divided Output 7 OUT Divided output 180° out of phase with OUT. 8 PWR SEL In the low power mode, the power select pin is left floating. By grounding this pin, the output power is increased by approximately 10 dB. 9 PWR DWN The power down pin is grounded for normal operation. Applying 5 volts to this pin will power down this device. 10 DISABLE The disable pin is grounded for normal operation. Applying 5 volts to this pin will disable the input buffer amplifier. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com FREQUENCY DIVIDERS - CHIP 1 Pad Description 1 - 29 HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz FREQUENCY DIVIDERS - CHIP 1 Truth Table Function Pin 5V GND Float DISABLE 10 Output Off Output On X PWR DWN 9 Power Down Power Up X PWR SEL 8 X High Power Output Low Power Output X = State not permitted. Assembly Diagrams To +5V Vcc Supply (Bypassed via 10 uF Capacitor). AC coupling capacitors. AC coupling capacitors. Optional AC coupled differential input. Should be AC grounded for single ended operation. This port should be grounded for normal operation. Applying +5V to this port will disable the input buffer amplifier. 1 - 30 Optional AC coupled differential output. For best single ended reverse leakage performance, this port should be terminated into 50 ohm. This port should be grounded for normal operation. Applying +5V to this port will power down the device. For high power output, this port should be bonded to ground. For low power output, this port should be floating. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC365 v04.1007 GaAs HBT MMIC DIVIDE-BY-4, DC - 13 GHz Handling Precautions 1 Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and fl at. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com FREQUENCY DIVIDERS - CHIP Follow these precautions to avoid permanent damage. 1 - 31