TI1 CSD95481RWJT Synchronous buck nexfet smart power stage Datasheet

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CSD95481RWJ
SLPS674 – JUNE 2017
CSD95481RWJ Synchronous Buck NexFET™ Smart Power Stage
1 Features
2 Applications
•
•
•
•
•
•
1
•
•
•
•
•
•
•
•
•
•
•
•
60-A Continuous Operating Current Capability
Over 95% System Efficiency at 30 A
High-Frequency Operation (up to 1.25 MHz)
Diode Emulation Function
Temperature Compensated Bi-Directional Current
Sense
Analog Temperature Output
Fault Monitoring
3.3-V and 5-V PWM Signal Compatible
Tri-State PWM Input
Integrated Bootstrap Switch
Optimized Dead Time for Shoot-Through
Protection
High-Density QFN 5-mm × 6-mm Footprint
Ultra-Low-Inductance Package
System Optimized PCB Footprint
Thermally Enhanced Topside Cooling
RoHS Compliant – Lead-Free Terminal Plating
Halogen Free
Multiphase Synchronous Buck Converters
– High-Frequency Applications
– High-Current, Low-Duty Cycle Applications
POL DC-DC Converters
Memory and Graphic Cards
Desktop and Server VR12.x / VR13.x V-Core
Synchronous Buck Converters
•
•
•
3 Description
The CSD95481RWJ NexFET™ power stage is a
highly optimized design for use in a high-power, highdensity synchronous buck converter. This product
integrates the driver IC and power MOSFETs to
complete the power stage switching function. This
combination produces high-current, high-efficiency,
and high-speed switching capability in a small 5-mm
× 6-mm outline package. It also integrates the
accurate current sensing and temperature sensing
functionality to simplify system design and improve
accuracy. In addition, the PCB footprint has been
optimized to help reduce design time and simplify the
completion of the overall system design.
Device Information(1)
Application Diagram
P12V
AVSP
AVSN
TPS53679
VIN
PWM
PWM1
ASKIP#
P5V
DEVICE
MEDIA
QTY
PACKAGE
SHIP
CSD95481RWJ
13-Inch Reel
2500
CSD95481RWJT
7-Inch Reel
250
QFN
5.00-mm × 6.00-mm
Package
Tape
and
Reel
BOOT BOOT_R
CSD95481RWJ
EN/FCCM
VOS
VSW
VDD
PVDD
LSET
TAO
LOAD
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
PGND IOUT REFIN
Typical Power Stage Efficiency and Power Loss
ACSP1
TSEN
100
14
90
12
80
10
70
8
60
6
50
4
40
2
P12V
PWM
VREF
P5V
ADDR
BOOT BOOT_R
CSD95481RWJ
EN/FCCM
VOS
VSW
VDD
TAO
PGND IOUT REFIN
Efficiency (%)
PVDD
LSET
3.3 V
V3P3
ACSP6
VREF
P12V
VIN_CSNIN
CSPIN
VCCIO
BEN_VCCIO
SCLK
SDIO
SALERT#
PIN_ALT#
VR_HOT#
SMB_CLK
SMB_ALERT
#
SMB_DIO
AVR_RDY
BVR_RDY
AVR_EN
VR_FAULT#
RESET#
BVSN
BVSP
Power Loss (W)
VIN
APWM6
P12V
VIN
PWM
BPWM1
BSKIP#
P5V
BOOT BOOT_R
CSD95492QVM
EN/FCCM
VOS
VSW
VDD
PVDD
LSET
TAO
LOAD
PGND IOUT REFIN
30
0
BCSP1
10
20
30
40
Output Current (A)
50
0
60
D000
AGND
Copyright © 2016, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD95481RWJ
SLPS674 – JUNE 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Pin Configuration and Functions .........................
Specifications.........................................................
1
1
1
2
3
4
6.1
6.2
6.3
6.4
4
4
4
5
Absolute Maximum Ratings ......................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
8
Device and Documentation Support.................... 7
8.1
8.2
8.3
8.4
8.5
9
Receiving Notification of Documentation Updates....
Community Resources..............................................
Trademarks ...............................................................
Electrostatic Discharge Caution ................................
Glossary ....................................................................
7
7
7
7
7
Mechanical, Packaging, and Orderable
Information ............................................................. 8
9.1 Mechanical Drawing.................................................. 8
9.2 Recommended PCB Land Pattern............................ 9
9.3 Recommended Stencil Opening ............................. 10
Application Schematic .......................................... 6
4 Revision History
2
DATE
REVISION
NOTES
June 2017
*
Initial release.
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5 Pin Configuration and Functions
VOS
1
AGND
2
VDD
3
PVDD
4
PGND
5
NC
6
NC
35
VIN
36
BOOTR
EN/FCCM
37
PWM
TAO/FLT
38
BOOT
IOUT
39
LSET
REFIN
Top View
34
33
32
31
30
VIN
40
29
VIN
28
VIN
27
VIN
26
VIN
25
VIN
24 PGND
41
23 PGND
21 PGND
13
14
15
16
17
18
19
SW
12
SW
11
SW
10
SW
20 PGND
SW
9
SW
PGND
22 PGND
SW
8
SW
PGND
PGND
SW
7
SW
PGND
Pin Functions
PIN
NAME
DESCRIPTION
NO.
VOS
1
Output voltage sensing pin for the internal current sensing circuitry.
AGND
2
This pin is internally connected to PGND.
VDD
3
Supply voltage for internal circuitry. This pin should be bypassed directly to pin 2.
PVDD
4
Supply voltage for gate drivers. This pin should be bypassed to PGND.
PGND
5
Power ground.
NC
6
Not connected. This pin needs to be left floating in application.
PGND
7-9
Power ground.
VSW
10-19
Phase node connecting the HS MOSFET source and LS MOSFET drain – pin connection to the output inductor.
PGND
20-24
Power ground.
VIN
25-30
Input voltage pin. Connect input capacitors close to this pin.
NC
31
Not connected. This pin needs to be left floating in application.
BOOTR
32
Return path for HS gate driver. It is connected to VSW internally.
BOOT
33
Bootstrap capacitor connection. Connect a minimum 0.1-µF, 16-V, X5R ceramic capacitor from BOOT to
BOOTR pins. The bootstrap capacitor provides the charge to turn on the control FET. The bootstrap diode is
integrated.
PWM
34
Tri-state input from external controller. Logic low sets control FET gate low and sync FET gate high. Logic high
sets control FET gate high and sync FET gate low. Both MOSFET gates are set low if PWM stays in Hi-Z for
greater than the tri-state shutdown hold-off time (T3HT).
35
This dual function pin either enables the diode emulation function or can be used as a simple enable for the
device. When this pin is driven into the tri-state window and held there for more than the tri-state hold-off time,
Diode Emulation Mode is enabled for sync FET. When the pin is high, device operates in Forced Continuous
Conduction Mode. When the pin is low, both FETs are held off. An internal resistor pulls this pin low if left
floating.
TAO/FLT
36
Temperature amplifier output. Reports a voltage proportional to the IC temperature. An ORing diode is integrated
in the IC. When used in multiphase application, a single wire can be used to connect the TAO pins of all the ICs.
Only the highest temperature will be reported. TAO will be pulled up to 3.3 V if thermal shutdown LSOC or HSS
detection circuit is tripped.
LSET
37
A resistor from this pin to PGND pin sets the inductor value for the internal current sensing circuitry.
IOUT
38
Output of current sensing amplifier. V(IOUT) – V(REFIN) is proportional to the phase current.
REFIN
39
External reference voltage input for current sensing amplifier.
PGND
40
Power ground.
NC
41
Not connected. This pin needs to be left floating in application.
EN/FCCM
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6 Specifications
6.1 Absolute Maximum Ratings
TA = 25°C (unless otherwise stated) (1)
MIN
MAX
UNIT
VIN to PGND
–0.3
20
V
VIN to VSW
–0.3
20
V
23
V
–0.3
20
V
VIN to VSW (10 ns)
VSW to PGND
VSW to PGND (10 ns)
–7
23
V
VDD to PGND
–0.3
7
V
PVDD to PGND
–0.3
7
V
EN/FCCM, TAO/FLT, LSET to PGND
–0.3
VDD + 0.3
V
IOUT, VOS, PWM to PGND
–0.3
7
V
REFIN
–0.3
3.6
V
BOOT to BOOTR (2)
–0.3
VDD + 0.3
V
BOOT to PGND
–0.3
30
V
TJ
Operating junction temperature
–55
150
°C
Tstg
Storage temperature
–55
150
°C
(1)
(2)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Should not exceed 7 V.
6.2 ESD Ratings
VALUE
V(ESD)
Electrostatic discharge
Human-body model (HBM)
±2000
Charged-device model (CDM)
±500
UNIT
V
6.3 Recommended Operating Conditions
TA = 25°C (unless otherwise stated)
MIN
MAX
UNIT
VDD
Driver supply voltage
4.5
5.5
V
PVDD
Gate drive voltage
4.5
5.5
V
VIN
Input supply voltage (1)
4.5
16
V
VOUT
Output voltage
PWM to PGND
IOUT
Continuous output current
(3)
VIN = 12 V, VDD = 5 V, PVDD = 5 V,
VOUT = 1.2 V,
ƒSW = 500 kHz (2)
IOUT-PK
Peak output current
ƒSW
Switching frequency
CBST = 0.1 µF (min), VOUT = 2.5 V
(max)
On-time duty cycle
ƒSW = 1 MHz
Minimum PWM on-time
(2)
(3)
4
V
V
60
A
90
A
1250
kHz
85%
20
Operating junction temperature
(1)
5.5
VDD + 0.3
–40
ns
125
°C
Operating at high VIN can create excessive AC voltage overshoots on the switch node (VSW) during MOSFET switching transients. For
reliable operation, the switch node (VSW) to ground voltage must remain at or below the Absolute Maximum Ratings.
Measurement made with six 10-µF (TDK C3216X7R1C106KT or equivalent) ceramic capacitors across VIN to PGND pins.
System conditions as defined in Note 2. Peak output current is applied for tp = 50 µs.
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6.4 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
θJC
Thermal resistance, junction-to-case (top of package)
7.4
°C/W
θJB
Thermal resistance, junction-to-board (1)
2.2
°C/W
ΨJT
Junction-to-top characterization parameter
0.9
°C/W
(1)
2
2
θJB is determined with the device mounted on a 1-in (6.45-cm ), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in, 0.06-in (1.52-mm)
thick FR4 board based on hottest board temperature within 1 mm of the package.
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7 Application Schematic
P12V
AVSP
TPS53679
AVSN
VIN
PWM
PWM1
ASKIP#
P5V
BOOT BOOT_R
CSD95481RWJ
EN/FCCM
VOS
VSW
VDD
PVDD
LSET
TAO
LOAD
PGND IOUT REFIN
ACSP1
TSEN
P12V
VIN
PWM
APWM6
VREF
P5V
ADDR
BOOT BOOT_R
CSD95481RWJ
EN/FCCM
VOS
VSW
VDD
PVDD
LSET
TAO
PGND IOUT REFIN
3.3 V
V3P3
ACSP6
VREF
P12V
VIN_CSNIN
CSPIN
VCCIO
BEN_VCCIO
SCLK
SDIO
SALERT#
PIN_ALT#
VR_HOT#
SMB_CLK
SMB_ALERT
#
SMB_DIO
AVR_RDY
BVR_RDY
AVR_EN
VR_FAULT#
RESET#
BVSN
BVSP
P12V
VIN
PWM
BPWM1
BSKIP#
P5V
BOOT BOOT_R
CSD95492QVM
EN/FCCM
VOS
VSW
VDD
PVDD
LSET
TAO
LOAD
PGND IOUT REFIN
BCSP1
AGND
Copyright © 2016, Texas Instruments Incorporated
Figure 1. Application Schematic
Note: The schematic in Figure 1 is a conceptual drawing only. Actual designs may require additional components
not shown.
6
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SLPS674 – JUNE 2017
8 Device and Documentation Support
8.1 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
8.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
8.3 Trademarks
NexFET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
8.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
8.5 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
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9 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
9.1 Mechanical Drawing
5.1
4.9
B
A
PIN 1 INDEX AREA
6.1
5.9
C
1.05 MAX
10
2.225 0.1
TYP
9
0.3
0.2
13X
20
1.95
0.8 0.1
0.4 0.1
0.1 0.1
19
2.05
1.3 0.1
0.9 0.1
2.6 0.1
2.2 0.1
(0.203) TYP
0.05
0.00
0.3
10X
0.2
9X 0.45
0.13 TYP
2.025
0.000
PKG
1.75 0.1
SEATING PLANE
0.08
7
10X 0.45
R0.05
TYP
41
24
0.000
PKG
6
0.3 0.1
25
16X
2.25 0.1
30
39
14X 0.45
0.4 0.1
PIN 1 ID
(45 X0.3)
2.175
29
1
16X
2.05
2.275
0.45
0.35
40
0.3
0.2
0.1
0.05
C A B
4221590/C 01/2017
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning
and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pads must be soldered to the printed circuit board for optimal thermal and mechanical
performance.
8
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16X (0.6)
39
(2.7) TYP
(2.22) TYP
2X (2.11)
3X (1.15)
(0.4)
(0.2)
0.000
3X (0.875)
(1.75)
(1.55)
(2)
(2.4)
9.2 Recommended PCB Land Pattern
METAL UNDER
SOLDER MASK
TYP
30
(2.9)
16X (0.25)
1
(2.25)
29
(2.25)
(2.175)
(2.05)
SOLDER MASK
OPENING, TYP
(1.275)
40
14X (0.45)
(0.5)
25
(0.3)
(0.025)
(0.1)
(0.4)
(0.3)
0.000 PKG
6
24
41
(0.3)
(R0.05) TYP
(0.8)
7
(1.05)
5X (1.15)
19X (0.45)
( 0.2) VIA
TYP
9
20
(2.2)
(0.05) MIN
TYP
5X (2)
(2.05)
(2.6)
(2.75) TYP
(3.2) TYP
19
10
(2.225) TYP
20X (0.25)
3X (2)
(2.025)
3X (1)
(0.9)
2X (1)
(1.3)
(1.75)
2X (2)
(2.225) TYP
(2.7) TYP
PKG
LAND PATTERN EXAMPLE
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning
and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This package is designed to be soldered to thermal pads on the board. For more information, see QFN/SON
PCB Attachment (SLUA271).
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29X (0.6)
(2.4) TYP
2X (1.9)
2X (1.05)
2X (1.25)
2X (0.42)
2X (0.085)
0.000
PKG
2X (0.775)
2X (0.975)
2X (1.665)
(2)
(2.4) TYP
9.3 Recommended Stencil Opening
30
39
29X (0.25)
EXPOSED
METAL
1
29
24X (0.45)
4X (1.375)
4X (1.175)
40
EXPOSED
METAL
SOLDER MASK
OPENING
TYP
(0.025)
25
6
(0.1)
(0.4)
41
(0.84)
24
7
(R0.05) TYP
(0.375)
4X (0.305)
0.000 PKG
3X (0.13)
(0.25)
3X (1.05)
3X (1.25)
(1.3)
(1.75)
(1.05)
4X (2.245)
9
20
EXPOSED
METAL
4X (2.17)
(2.6)
(2.75) TYP
METAL UNDER
SOLDER MASK
TYP
10
(3.2) TYP
19
(2.025)
2X (1.9)
2X (0.9)
2X (1.1)
2X (0.1)
2X (0.1)
9X (0.45)
(1.1)
2X (0.9)
(1.9)
10X (0.25)
SOLDER PAST EXAMPLE
BASED ON 0.125 mm THICK STENCIL
PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGE
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning
and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525
may have alternate design recommendations.
10
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PACKAGE OPTION ADDENDUM
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17-Sep-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
CSD95481RWJ
ACTIVE
VQFN-CLIP
RWJ
41
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
-55 to 150
95481RWJ
CSD95481RWJT
ACTIVE
VQFN-CLIP
RWJ
41
250
Green (RoHS
& no Sb/Br)
CU SN
Level-2-260C-1 YEAR
-55 to 150
95481RWJ
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
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17-Sep-2017
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
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15-Sep-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
CSD95481RWJ
VQFNCLIP
RWJ
41
2500
330.0
12.4
5.3
6.3
1.2
8.0
12.0
Q1
CSD95481RWJT
VQFNCLIP
RWJ
41
250
180.0
12.4
5.3
6.3
1.2
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
15-Sep-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD95481RWJ
VQFN-CLIP
RWJ
41
2500
370.0
355.0
55.0
CSD95481RWJT
VQFN-CLIP
RWJ
41
250
195.0
200.0
45.0
Pack Materials-Page 2
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