LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC124TET1G Applications Inverter, Interface, Driver • 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making the device design easy. • 1 2 SC-89 We declare that the material of product compliance with RoHS requirements. 1 BASE zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCBO VCEO VEBO IC 50 50 5 100 V V V mA Pc 200 mW Tj Tstg 150 −55 to +150 C C Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature R1 3 COLLECTOR 2 EMITTER DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping LDTC124TET1G H4 22 3000/Tape & Reel LDTC124TET3G H4 22 10000/Tape & Reel zElectrical characteristics (Ta=25°C) Parameter Typ. Max. Unit 50 − − V IC=50µA 50 − − V IC=1mA BVEBO 5 − − V IE=50µA ICBO − − 0.5 µA VCB=50V IEBO − − 0.5 µA VEB=4V VCE(sat) − − 0.3 V IC/IB=5mA/0.5mA DC current transfer ratio hFE 100 250 600 − VCE=5V, IC=1mA Input resistance R1 15.4 22 28.6 kΩ Transition frequency fT ∗ − 250 − MHZ Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Symbol Min. BVCBO BVCEO Conditions − VCE=10V, IE=−5mA, f=100MHZ ∗ Characteristics of built-in transistor 1/3 LESHAN RADIO COMPANY, LTD. LDTC124TET1G 1k VCE=5V 500 Ta=100°C DC CURRENT GAIN : hFE Ta=25°C 200 100 Ta= −40°C 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) z Electrical characteristic curves 1 IC/IB=20/1 500m Ta=100°C 200m Ta=25°C 100m 50m Ta= −40°C 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m COLLECTOR CURRENT : IC (A) Fig.2 Collector-Emitter saturation voltage vs. Collector current 2/3 LESHAN RADIO COMPANY, LTD. LDTC124TET1G SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. 3/3