MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE No t fo R r N ec ew om De me sig nd n CM150DU-34KA ● IC ................................................................... 150A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM TC measured point 108 25 25 17.5 6 E2 G2 CIRCUIT DIAGRAM (7) 8.85 C1 E2 G1 E1 CM C1 E2 C2E1 62 15 6 E2 G2 14 G1 E1 (8.25) 14 C2E1 21.5 2.5 3-M6 NUTS 25.7 4-φ6. 5 MOUNTING HOLES 4 18 0.5 2.8 29 LABEL 0.5 0.5 0.5 4 7 8.5 18 22 7 7.5 18 +1.0 –0.5 (18) (7.5) 93 ±0.25 14 48 ±0.25 (7.5) Dimensions in mm Feb. 2009 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Parameter Collector-emitter voltage Gate-emitter voltage Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1700 ±20 150 300 150 300 1100 –40 ~ +150 –40 ~ +125 3500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V No t fo R r N ec ew om De me sig nd n VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Parameter Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 15mA, VCE = 10V 4 5.5 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — — — 3.2 3.8 — — — 675 — — — — — 7.7 — 2.2 — — 0.04 — 0.5 4.0 — 21 3.6 1.1 — 450 200 550 800 600 — 4.6 — 0.11 0.18 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge VEC(Note 1) Emitter-collector voltage Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Thermal resistance*1 Contact thermal resistance Thermal resistance Tj = 25°C Tj = 125°C IC = 150A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 150A, VGE = 15V VCC = 1000V, IC = 150A VGE = ±15V RG = 2.1Ω, Inductive load IE = 150A IE = 150A, VGE = 0V, Tj = 25°C IE = 150A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips — mA V nF nC ns ns µC V V K/W 0.07*3 Note 1. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 300 12 300 11 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR CURRENT (A) 15 200 10 14 150 9 100 8 50 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 20V 250 0 2 4 6 8 200 150 100 50 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 6 VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 0 50 100 150 200 250 300 Tj = 25°C 8 6 IC = 300A 4 IC = 150A 2 0 IC = 60A 6 8 10 12 14 16 18 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 20 102 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 102 7 5 3 2 101 7 5 3 2 100 10 COLLECTOR CURRENT IC (A) 103 EMITTER CURRENT IE (A) 250 0 10 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) No t fo R r N ec ew om De me sig nd n Tj = 25°C 1 2 3 4 5 7 5 3 2 Cies 101 7 5 3 2 100 7 5 Coes Cres 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM150DU-34KA HIGH POWER SWITCHING USE REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 SWITCHING TIMES (ns) No t fo R r N ec ew om De me sig nd n 7 5 3 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 tf 103 td(off) 7 5 3 2 td(on) Conditions: VCC = 1000V VGE = ±15V RG = 2.1Ω Tj = 125°C Inductive load 102 7 5 3 2 tr 101 1 10 2 3 5 7 102 2 3 5 7 103 3 2 trr Irr 102 7 5 3 2 101 1 10 COLLECTOR CURRENT IC (A) 7 5 3 2 10–3 GATE-EMITTER VOLTAGE VGE (V) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) 10–1 7 5 3 2 10–2 10–2 7 5 3 2 Single Pulse TC = 25°C 5 7 102 2 5 7 103 3 20 3 2 7 5 3 2 3 GATE CHARGE CHARACTERISTICS (TYPICAL) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.11K/ W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.18K/ W 100 10–1 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 7 5 3 2 Conditions: VCC = 1000V VGE = ±15V RG = 2.1Ω Tj = 25°C Inductive load 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 IC = 150A 16 VCC = 1000V 12 8 4 0 TIME (s) VCC = 800V 0 200 400 600 800 1000 GATE CHARGE QG (nC) Feb. 2009 4