GeneSiC GB10SLT12-220 Silicon carbide power schottky diode Datasheet

GB10SLT12-220
Silicon Carbide Power
Schottky Diode
VRRM
IF (Tc = 25°C)
QC
Features
Package







 RoHS Compliant
1200 V Schottky rectifier
175 °C maximum operating temperature
Temperature independent switching behavior
Superior surge current capability
Positive temperature coefficient of VF
Extremely fast switching speeds
Superior figure of merit QC/IF
=
=
=
1200 V
25 A
31 nC
case
PIN 1
2
CASE
PIN 2
1
TO – 220AC
Advantages
Applications















Improved circuit efficiency (Lower overall cost)
Low switching losses
Ease of paralleling devices without thermal runaway
Smaller heat sink requirements
Low reverse recovery current
Low device capacitance
Low reverse leakage current at operating temperature
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
High Voltage Multipliers
Maximum Ratings at Tj = 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Surge non-repetitive forward current, Half Sine
Wave
Non-repetitive peak forward current
2
Symbol
VRRM
IF
IF(RMS)
IF,SM
IF,max
2
I t value
∫i dt
Power dissipation
Operating and storage temperature
Ptot
Tj , Tstg
Conditions
Values
1200
10
17
65
55
280
21
15
190
-55 to 175
TC ≤ 150 °C
TC ≤ 150 °C
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C, tP = 10 µs
TC = 25 °C, tP = 10 ms
TC = 150 °C, tP = 10 ms
TC = 25 °C
Unit
V
A
A
A
A
2
As
W
°C
Electrical Characteristics at Tj = 175 °C, unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
ts
Total capacitance
C
Conditions
min.
IF = 10 A, Tj = 25 °C
IF = 10 A, Tj = 175 °C
VR = 1200 V, Tj = 25 °C
VR = 1200 V, Tj = 175 °C
VR = 400 V
IF ≤ IF,MAX
VR = 960 V
dIF/dt = 200 A/μs
VR = 400 V
Tj = 175 °C
VR = 960 V
VR = 1 V, f = 1 MHz, Tj = 25 °C
VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
Values
typ.
1.5
2.6
5
10
31
52
max.
1.8
3.0
50
100
Unit
V
µA
nC
< 25
ns
490
45
33
pF
RthJC
0.8
°C/W
M
0.6
Nm
Thermal Characteristics
Thermal resistance, junction - case
Mechanical Properties
Mounting torque
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
Pg1 of 4
GB10SLT12-220
Figure 1: Typical Forward Characteristics
Figure 2: Typical Reverse Characteristics
Figure 3: Power Derating Curve
Figure 4: Current Derating Curves (D = tP/T, tP= 400 µs)
(Considering worst case Zth conditions )
Figure 5: Typical Junction Capacitance vs Reverse Voltage
Characteristics
Figure 6: Typical Switching Energy vs Reverse Voltage
Characteristics
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
Pg2 of 4
GB10SLT12-220
Figure 7: Current vs Pulse Duration Curves at TC = 150 °C
Figure 8: Transient Thermal Impedance
Package Dimensions:
TO-220AC
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
Pg3 of 4
GB10SLT12-220
Revision History
Date
Revision
Comments
2014/08/26
4
Updated Electrical Characteristics
2013/06/12
3
Updated Electrical Characteristics
2012/12/18
2
Second generation update
2012/05/22
1
Second generation release
2010/12/14
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
Aug 2014
http://www.genesicsemi.com/index.php/sic-products/schottky
Pg4 of 4
GB10SLT12-220
SPICE Model Parameters
Copy the following code into a SPICE software program for simulation of the GB10SLT12-220 device.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
$Revision:
1.0
$
*
$Date:
20-SEP-2013
$
*
*
GeneSiC Semiconductor Inc.
*
43670 Trade Center Place Ste. 155
*
Dulles, VA 20166
*
http://www.genesicsemi.com/index.php/sic-products/schottky
*
*
COPYRIGHT (C) 2013 GeneSiC Semiconductor Inc.
*
ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
* Start of GB10SLT12-220 SPICE Model
*
.SUBCKT GB10SLT12 ANODE KATHODE
D1 ANODE KATHODE GB10SLT12_SCHOTTKY
D2 ANODE KATHODE GB10SLT12_PIN
.MODEL GB10SLT12_SCHOTTKY D
+ IS
4.55E-15
RS
0.0736
+ N
1
IKF
1000
+ EG
1.2
XTI
-2
+ TRS1
0.0054347826
TRS2
2.71739E-05
+ CJO
6.40E-10
VJ
0.469
+ M
1.508
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
10
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB10SLT12_PIN D
+ IS
1.54E-22
RS
0.19
+ TRS1
-0.004
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
10
TYPE
SiC_PiN
.ENDS
*
* End of GB10SLT12-220 SPICE Model
Nov 2013
http://www.genesicsemi.com/index.php/sic-products/schottky
Pg1 of 1
Similar pages