ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096) Ultrafast response of several tens picosecond Case Lead 100 Ω BIAS-TEE Electric Output Optical Input BIAS CASE Coaxial Connector G4176-01 (G7096-01) 10 nF BIAS 10 kΩ Power Supply Power Supply - (or +) + (or -) + (or -) - (or +) FEATURES Ultrafast response G4176 : tr , tf = 30 ps (Typ.) G7096 : tr = 40 ps (Typ.) Low dark current G4176 : 100 pA (Ta=25 °C) Large photosensitive area 200 µm DIMENSIONAL OUTLINES (Unit : mm) G4176 G4176-01 G7096 G7096-01 3.6 12 min. 3.0 2.0 9.6 1.2 φ5.4 φ4.7 SENSITIVE SURFACE 2.3 G4176-01 G7096-01 DESCRIPTION 10 φ8.2 G4176 G7096 Optical high-speed waveform measurements Optical communications CHIP CHIP SENSITIVE SURFACE APPLICATIONS 1/4-36UNS-2B φ7.9 φ0.45LEAD CASE HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G417601 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. BIAS / OUTPUT* OUTPUT/BIAS* OUTPUT / BIAS* CASE (BOTTOM VIEW) (BOTTOM VIEW) *Both polarities of the bias voltage are available. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: [email protected] U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LPRD1022E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] JAN 2003 IP Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K. ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) G4176 SERIES G7096 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol Maximum Bias Voltage Vb Condition Value 10 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V) Unit Φ CW to Pulsed Light Pulse width Pulse width Radiant sensitivity S mW Dark Current Id NEP* 5 mW -40 to +85 °C G4176 -40 to +100 °C G4176-01 1ns Operating Temperature Top(a) Storage Temperature 50 1ns Tstg Symbol Condition V Maximum Light Input Pulsed Light Item Value λ = 850 nm ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol Maximum Bias Voltage Vb Unit Min. Typ. Max. 0.2 0.3 - A/W - 100 300 pA 0.2 X 10-15 3 X 10-15 - 0.2 X 10-15 4 X 10-15 - W/Hz1/2 15 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V) Unit Φ Pulsed Light Pulse width Tstg S mW Dark Current Id NEP* 2 mW °C G7096 -40 to +100 °C G7096-01 Terminal Capacitance GENERAL CHARACTERISTICS (Ta=25°C) Item G4176** Symbol Condition Value Unit Spectral Response Range λ Vb = 7 V 450 to 870 nm Peak Response Wavelength λp Vb = 7 V 850 nm Effective Sensitive Area A 0.2 Chip Size 1 0.2 mm2 1 mm2 Package G4176 G4176-01 TO-18 - Ct - 0.3 0.5 0.4 pF tr 10 to 90 % G4176-01 - 30 50 Item 40 ps 80 tf 90 to 10 % G4176-01 - 30 40 - 50 80 ps Value Unit Spectral Response Range λ Vb = 10 V 850 to 1650 nm Peak Response Wavelength λp Vb = 10 V 1500 nm Effective Sensitive Area A 0.2 1 0.2 mm2 1 mm2 Package (Unified with SMA connector) TO-18 G4176-01 G7096 (Including time response of light source, assembly circuit and oscilloscope) (Including time response of light source, bias-tee and oscilloscope) (Vb = 7 V) G7096 (Vb = 7 V) A/W 20 µA 0.2 X 10-10 2 X 10-10 - W/Hz1/2 0.2 X 10-10 3 X 10-10 - - 0.7 0.8 - 0.9 1.0 - 40 60 - 80 100 - 120 160 - 160 200 pF 10 to 90 % ps tf 90 to 10 % ps 1.1 (Including time response of light source, assembly circuit and oscilloscope) (Vb = 10 V) 1.1 0.8 0.8 0.6 0.5 0.4 0.7 0.6 0.5 0.4 Output (arb. unit) 0.8 Output (arb. unit) 0.8 Output (arb. unit) 0.9 0.7 0.7 0.6 0.5 0.4 0.7 0.6 0.5 0.4 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.1 0.1 0.1 0.1 0 0 0 0 0.3 Time (0.1ns/div) Time (0.1ns/div) Figure 2: Spectral Response Time (0.1ns/div) Time (0.1ns/div) Figure 4: Spectral Response (Vb = 7 V) 10-2 900 1000 (Vb = 10 V) 100 Radiant Sensitivity (A/W) 10-1 10-1 10-2 10-3 0.6 (Vb = 10 V) 1.1 1.0 Wa elength (nm) - 5 G7096-01 0.9 800 0.4 - *Noise Equivalent Power **Value on Chip 1.0 700 tr G7096-01 0.9 600 Ct G7096-01 1.0 500 0.2 Max. Fall Time 0.9 400 Typ. Rise Time 1.0 10-3 300 λ = 1.3 µm Unit Min. Figure 3: Optical Pulse Response (Including time response of light source, bias-tee and oscilloscope) 100 λ = 1.3 µm G7096-01 G7096 TO-5 G7096 G4176 1.1 Output (arb. unit) Condition G7096-01 *Noise Equivalent Power **Value on Chip G7096** Symbol Chip Size Fall Time Figure 1: Optical Pulse Response Radiant Sensitivity (A/W) GENERAL CHARACTERISTICS (Ta=25°C) 0.6 Rise Time G4176 TO-5 (Unified with SMA connector) Value Condition Terminal Capacitance G4176-01 G4176 Symbol Radiant sensitivity -40 to +85 1ns Pulse width Operating Temperature Top(a) Storage Temperature 10 1ns Item V Maximum Light Input CW to Pulsed Light λ = 850 nm Value Condition 0.8 1.0 W 1.2 l 1.4 th (µ ) 1.6 1.8 ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) G4176 SERIES G7096 SERIES ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol Maximum Bias Voltage Vb Condition Value 10 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=7V) Unit Φ CW to Pulsed Light Pulse width Pulse width Radiant sensitivity S mW Dark Current Id NEP* 5 mW -40 to +85 °C G4176 -40 to +100 °C G4176-01 1ns Operating Temperature Top(a) Storage Temperature 50 1ns Tstg Symbol Condition V Maximum Light Input Pulsed Light Item Value λ = 850 nm ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol Maximum Bias Voltage Vb Unit Min. Typ. Max. 0.2 0.3 - A/W - 100 300 pA 0.2 X 10-15 3 X 10-15 - 0.2 X 10-15 4 X 10-15 - W/Hz1/2 15 ELECTRICAL AND OPTICAL CHARACTERISTICS (Ta=25°C, Vb=10V) Unit Φ Pulsed Light Pulse width Tstg S mW Dark Current Id NEP* 2 mW °C G7096 -40 to +100 °C G7096-01 Terminal Capacitance GENERAL CHARACTERISTICS (Ta=25°C) Item G4176** Symbol Condition Value Unit Spectral Response Range λ Vb = 7 V 450 to 870 nm Peak Response Wavelength λp Vb = 7 V 850 nm Effective Sensitive Area A 0.2 Chip Size 1 0.2 mm2 1 mm2 Package G4176 G4176-01 TO-18 - Ct - 0.3 0.5 0.4 pF tr 10 to 90 % G4176-01 - 30 50 Item 40 ps 80 tf 90 to 10 % G4176-01 - 30 40 - 50 80 ps Value Unit Spectral Response Range λ Vb = 10 V 850 to 1650 nm Peak Response Wavelength λp Vb = 10 V 1500 nm Effective Sensitive Area A 0.2 1 0.2 mm2 1 mm2 Package (Unified with SMA connector) TO-18 G4176-01 G7096 (Including time response of light source, assembly circuit and oscilloscope) (Including time response of light source, bias-tee and oscilloscope) (Vb = 7 V) G7096 (Vb = 7 V) A/W 20 µA 0.2 X 10-10 2 X 10-10 - W/Hz1/2 0.2 X 10-10 3 X 10-10 - - 0.7 0.8 - 0.9 1.0 - 40 60 - 80 100 - 120 160 - 160 200 pF 10 to 90 % ps tf 90 to 10 % ps 1.1 (Including time response of light source, assembly circuit and oscilloscope) (Vb = 10 V) 1.1 0.8 0.8 0.6 0.5 0.4 0.7 0.6 0.5 0.4 Output (arb. unit) 0.8 Output (arb. unit) 0.8 Output (arb. unit) 0.9 0.7 0.7 0.6 0.5 0.4 0.7 0.6 0.5 0.4 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.1 0.1 0.1 0.1 0 0 0 0 0.3 Time (0.1ns/div) Time (0.1ns/div) Figure 2: Spectral Response Time (0.1ns/div) Time (0.1ns/div) Figure 4: Spectral Response (Vb = 7 V) 10-2 900 1000 (Vb = 10 V) 100 Radiant Sensitivity (A/W) 10-1 10-1 10-2 10-3 0.6 (Vb = 10 V) 1.1 1.0 Wa elength (nm) - 5 G7096-01 0.9 800 0.4 - *Noise Equivalent Power **Value on Chip 1.0 700 tr G7096-01 0.9 600 Ct G7096-01 1.0 500 0.2 Max. Fall Time 0.9 400 Typ. Rise Time 1.0 10-3 300 λ = 1.3 µm Unit Min. Figure 3: Optical Pulse Response (Including time response of light source, bias-tee and oscilloscope) 100 λ = 1.3 µm G7096-01 G7096 TO-5 G7096 G4176 1.1 Output (arb. unit) Condition G7096-01 *Noise Equivalent Power **Value on Chip G7096** Symbol Chip Size Fall Time Figure 1: Optical Pulse Response Radiant Sensitivity (A/W) GENERAL CHARACTERISTICS (Ta=25°C) 0.6 Rise Time G4176 TO-5 (Unified with SMA connector) Value Condition Terminal Capacitance G4176-01 G4176 Symbol Radiant sensitivity -40 to +85 1ns Pulse width Operating Temperature Top(a) Storage Temperature 10 1ns Item V Maximum Light Input CW to Pulsed Light λ = 850 nm Value Condition 0.8 1.0 W 1.2 l 1.4 th (µ ) 1.6 1.8 ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096) Ultrafast response of several tens picosecond Case Lead 100 Ω BIAS-TEE Electric Output Optical Input BIAS CASE Coaxial Connector G4176-01 (G7096-01) 10 nF BIAS 10 kΩ Power Supply Power Supply - (or +) + (or -) + (or -) - (or +) FEATURES Ultrafast response G4176 : tr , tf = 30 ps (Typ.) G7096 : tr = 40 ps (Typ.) Low dark current G4176 : 100 pA (Ta=25 °C) Large photosensitive area 200 µm DIMENSIONAL OUTLINES (Unit : mm) G4176 G4176-01 G7096 G7096-01 3.6 12 min. 3.0 2.0 9.6 1.2 φ5.4 φ4.7 SENSITIVE SURFACE 2.3 G4176-01 G7096-01 DESCRIPTION 10 φ8.2 G4176 G7096 Optical high-speed waveform measurements Optical communications CHIP CHIP SENSITIVE SURFACE APPLICATIONS 1/4-36UNS-2B φ7.9 φ0.45LEAD CASE HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses. The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps. Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM Photodetectors are suited for measurements of optical high-speed waveform and optical communications. There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and the polarity of an output signal depends on its connection. Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G417601 & G7096-01 is a TO-18, which is very common. An optical fiber or connector input types are available as a custom option. Contact your local representative for more information. BIAS / OUTPUT* OUTPUT/BIAS* OUTPUT / BIAS* CASE (BOTTOM VIEW) (BOTTOM VIEW) *Both polarities of the bias voltage are available. http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Laser Group, Sales Dept. 5000, Hirakuchi, Hamakita City, Shizuoka, 434-8601, Japan, Telephone: (81)53-584-0227, Fax: (81)53-584-0228, E-mail: [email protected] U.S.A.: Hamamatsu Corporation:360 Foothill Road, P.O. BOX 6910, Bridgewater, N.J. 08807-0910, U.S.A.Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: [email protected] Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658, E-mail: [email protected] France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33(1) 69 53 71 00, Fax: 33(1) 69 53 71 10, E-mail: [email protected] United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44)1707-294888, Fax: (44)1707-325777, E-mail: [email protected] North Europe: Hamamatsu Photonics Norden AB: Smidesv gen 12, SE-171-41 Solna, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01, E-mail: [email protected] Cat. No. LPRD1022E01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741, E-mail: [email protected] JAN 2003 IP Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.