Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Logic Level Enhancement Mode Power MOSFET MTB110P10J3 BVDSS ID RDS(ON)@VGS=-10V, ID=-4.5A RDS(ON)@VGS=-4.5V, ID=-4A -100V -14A 79mΩ(typ) 90mΩ(typ) Features Low Gate Charge Simple Drive Requirement Pb-free lead plating & halogen-free package Equivalent Circuit Outline MTB110P10J3 TO-252(DPAK) G D S G：Gate D：Drain S：Source Ordering Information Device MTB110P10J3-0-T3-G Package TO-252 (Pb-free lead plating & halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB110P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=175C, TC=25C, VGS=10V Symbol Limits Unit VDS VGS -100 ±20 V -14 (Note 1) ID Continuous Drain Current @ TJ=175C,TC=100C, VGS=10V -10 (Note 1) Continuous Drain Current @TA=25C, VGS=10V Continuous Drain Current @TA=70C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=-35A, RG=25Ω TC=25C TC=100C Total Power Dissipation TA=25C TA=70C Operating Junction and Storage Temperature Range (Note 2) IDSM (Note 2) IDM IAS EAS (Note 3) (Note 3) (Note 2) (Note 1) PD (Note 1) (Note 2) PDSM (Note 2) Tj, Tstg -3.3 -2.6 -56 -35 61 50 25 2.5 1.6 -55~+175 A mJ W C Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient, t≤10s (Note 2) Thermal Resistance, Junction-to-ambient, steady state Symbol RθJC RθJA Typical 2.7 15 40 Maximum 3 18 50 Unit C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3. Pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTB110P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 3/9 Characteristics (Tc=25C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS ID(ON) *1 RDS(ON) *1 Min. Typ. Max. -100 -1.0 -14 - 79 90 11 -2.5 ±100 -1 -25 100 120 - GFS *1 Dynamic Qg *1, 2 29.2 43.8 Qgs *1, 2 4.0 Qgd *1, 2 8.5 td(ON) *1, 2 8.8 13.2 tr 17.2 25.8 *1, 2 td(OFF) *1, 2 86.2 129.3 tf *1, 2 63 94.5 Ciss 1726 Coss 104 Crss 71 Rg 11 Source-Drain Diode Ratings and Characteristics IS *1 -14 ISM *1 -56 VSD *1 -0.73 -1.2 trr 28.8 53 Qrr 40.9 - Unit Test Conditions S VGS=0V, ID=-250μA VDS =VGS, ID=-250μA VGS=±20V, VDS=0V VDS =-80V, VGS =0V VDS =-80V, VGS =0V, TJ=125C VDS =-5V, VGS =-10V VGS =-10V, ID=-4.5A VGS =-4.5V, ID=-4.0A VDS =-10V, ID=-4A nC ID=-14A, VDS=-80V, VGS=-10V ns VDS=-50V, ID=-1A, VGS=-10V, RG=6Ω pF VGS=0V, VDS=-25V, f=1MHz Ω VDS=0V, f=1MHz V nA μA A mΩ A V ns nC IS=-2A, VGS=0V IF=-14A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB110P10J3 CYStek Product Specification Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V 5V -ID, Drain Current(A) 45 40 35 30 -BVDSS, Normalized Drain-Source Breakdown Voltage 50 4V 3.5V 25 20 -VGS=3V 15 10 -VGS=2.5V 1.2 1 0.8 0.6 ID=-250μA, VGS=0V 5 0.4 0 0 2 4 6 8 -VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 500 1.2 450 VGS=-2V -VSD, Source-Drain Voltage(V) RDS(ON), Static Drain-Source On-State Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 400 350 VGS=-2.5V -3V -4.5V -10V 300 250 200 150 100 VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 50 0.2 0 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 4 6 8 -IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.4 450 R DS(ON), Normalized Static DrainSource On-State Resistance 500 R DS(ON), Static Drain-Source OnState Resistance(mΩ) 2 ID=-4.5A 400 350 300 250 200 150 100 50 VGS=-10V, ID=-4.5A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 79mΩ typ 0.4 0 0 MTB110P10J3 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 5/9 Typical Characteristics (Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VG S(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 Coss 100 Crss f=1MHz 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 10 0 10 20 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Gate Charge Characteristics Maximum Safe Operating Area 10 100 100μs VDS=-20V 10 -VGS, Gate-Source Voltage(V) -ID, Drain Current (A) 1ms 10ms 100ms RDS(ON) Limited 1s 1 DC TC=25°C, Tj=175°C, VGS=-10V, RθJC=3°C/W, single pulse 0.1 8 VDS=-50V 6 VDS=-80V 4 2 ID=-14A 0 0.01 0.1 1 10 100 -VDS, Drain-Source Voltage(V) 0 1000 4 8 12 16 20 24 Qg, Total Gate Charge(nC) 28 32 Forward Transfer Admittance vs Drain Current Maximum Drain Current vs Case Temperature 100 GFS, Forward Transfer Admittance(S) 16 -ID, Maximum Drain Current(A) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 14 12 10 8 6 4 VGS=-10V, Tj(max)=175°C, RθJC=1.2°C/W, single pulse 2 0 25 MTB110P10J3 50 75 100 125 150 TC, Case Temperature(°C) 175 200 10 1 VDS=-10V Pulsed Ta=25°C 0.1 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 100 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 6/9 Typical Characteristics (Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 50 4500 VDS=-10V Peak Transient Power (W) 45 -ID, Drain Current(A) 40 35 30 25 20 15 10 TJ(MAX) =175°C TC=25°C θ JC=3°C/W 4000 3500 3000 2500 2000 1500 1000 500 5 0 0 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=3°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB110P10J3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB110P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3C/second max. (Tsmax to Tp) Preheat 100C −Temperature Min(TS min) −Temperature Max(TS max) 150C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 C Time within 5C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6C/second max. 6 minutes max. Time 25 C to peak temperature Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB110P10J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C968J3 Issued Date : 2014.08.07 Revised Date : Page No. : 9/9 TO-252 Dimension Marking: 4 Device Name B110 P10 Date Code □□□□ 1 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Inches Min. Max. 0.087 0.094 0.000 0.005 0.039 0.048 0.026 0.034 0.026 0.034 0.018 0.023 0.018 0.023 0.256 0.264 0.201 0.215 0.236 0.244 DIM A A1 B b b1 C C1 D D1 E Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.990 1.210 0.660 0.860 0.660 0.860 0.460 0.580 0.460 0.580 6.500 6.700 5.100 5.460 6.000 6.200 2 3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain DIM e e1 H K L L1 L2 L3 P V Inches Min. Max. 0.086 0.094 0.172 0.188 0.163 REF 0.190 REF 0.386 0.409 0.114 REF 0.055 0.067 0.024 0.039 0.026 REF 0.211 REF Millimeters Min. Max. 2.186 2.386 4.372 4.772 4.140 REF 4.830 REF 9.800 10.400 2.900 REF 1.400 1.700 0.600 1.000 0.650 REF 5.350 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: Lead : Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB110P10J3 CYStek Product Specification