ON NCP623MN-40R2G Ultra low noise 150 ma low dropout voltage regulator with on/off control Datasheet

NCP623
Ultra Low Noise
150 mA Low Dropout
Voltage Regulator with
ON/OFF Control
The NCP623 low dropout linear regulator can deliver up to 150 mA
of output current with a typical dropout voltage of 180 mV. This low
dropout feature helps to maintain a regulated output voltage for a
longer period of time as the lifetime of the battery decreases.
It is the ideal choice for noise sensitive environments like portable
applications where noise performance and space are at a premium. The
typical output noise voltage specification is 25 mVRMS. The space
saving package choices include a Micro8™ or DFN6. An additional
noise saving feature of this device is its ability to filter choppy signals
on the power supply by providing a typical DC ripple rejection of
−90 dB and −70 dB at 1.0 kHz.
The NCP623 is designed to work with very low ESR capacitors such
as ceramic capacitors which are common in the industry now.
Additional features such as thermal shutdown and short−circuit
protection provide for a robust system design.
Features
• Very Low Quiescent Current 170 mA (ON, no load), 100 nA
(OFF, no load)
• Very Low Dropout Voltage, Typical Value is 137 mV at an Output
Current of 100 mA
• Very Low Noise with External Bypass Capacitor (10 nF),
•
•
•
•
•
•
•
•
•
Typically 25 mVRMS over 100 Hz to 100 kHz
Internal Thermal Shutdown
Extremely Tight Line Regulation Typically −90 dB
Ripple Rejection −70 dB @ 1.0 kHz
Line Transient Response: 1.0 mV for DVin = 3.0 V
Extremely Tight Load Regulation, Typically 20 mV at DIout = 150 mA
Multiple Output Voltages Available
Logic Level ON/OFF Control (TTL−CMOS Compatible)
Output Capacitor ESR Can Vary from 0 W to 3.0 W
Pb−Free Packages are Available
Applications
• All Portable Systems, Battery Powered Systems, Cellular
Telephones, Radio Control Systems, Toys and Low Voltage Systems
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MARKING
DIAGRAMS
8
Micro8
DM SUFFIX
CASE 846A
1
Lxx
AYW G
G
1
Ç
NCP6
23yy
ALYW G
G
DFN6, 3X3
MN SUFFIX
CASE 488AE
1
Lxx
= Device Code (Micro8)
xx = See Ordering Information
NCP623yy = Device Code (DFN6)
yy = 25, 28, 30, 33, 40, or 50
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Bypass
1
8
VOUT
NC
2
7
GND
NC
3
6
GND
ON/OFF
4
5
VIN
Micro8
(Top View)
Ç
Ç
Ç
VIN
1
6
GND
2
5
VOUT
3
4
ÇÇ
ÇÇ
ÇÇ
ON/OFF
GND
Bypass
DFN6
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of
this data sheet.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 7
1
Publication Order Number:
NCP623/D
NCP623
VIN
On/Off
Thermal
Shutdown
ON/OFF
Band Gap
Reference
Bypass
VOUT
* Current Limit
* Antisaturation
* Protection
GND
GND
Figure 1. NCP623 Block Diagram
MAXIMUM RATINGS
Rating
Power Supply Voltage
Power Dissipation and Thermal Resistance
Maximum Power Dissipation
Case 488AE (DFN6, 3x3) MN Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Case 846A (Micro8) DM Suffix
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case
Operating Ambient Temperature Range
Maximum Junction Temperature
Storage Temperature Range
ESD Protection
− Human Body Model
− Machine Model
Symbol
Value
Unit
Vin
12
V
PD
Internally Limited
W
RqJA
**psi−JC* or YJC
161
13
RqJA
RqJC
240
105
TA
−40 to +85
°C
TJmax
150
°C
Tstg
−60 to +150
°C
VESD
2000
200
V
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*“C’’ (“case’’) is defined as the solder−attach interface between the center of the exposed pad on the bottom of the package, and the board to
which it is attached.
** Refer to the JEDEC Specs (51−2, 51−6).
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NCP623
ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = −40°C to +85°C, Max TJ = 150°C)
Characteristics
Symbol
Min
Typ
Max
Input Voltage Range
VON/OFF
2.5
−
Vin
ON/OFF Input Current (All versions)
VON/OFF = 2.4 V
ION/OFF
ON/OFF Input Voltages (All versions)
Logic “0”, i.e. OFF State
Logic “1”, i.e. ON State
VON/OFF
Unit
CONTROL ELECTRICAL CHARACTERISTICS
−
2.5
−
−
2.2
−
−
0.3
−
−
0.1
2.0
−
170
200
−
900
1400
175
210
−
2.45
2.74
2.94
3.23
3.92
4.90
2.5
2.8
3.0
3.3
4.0
5.0
2.55
2.86
3.06
3.37
4.08
5.1
2.41
2.70
2.89
3.18
3.86
4.83
2.5
2.8
3.0
3.3
4.0
5.0
2.59
2.90
3.11
3.42
4.14
5.17
−
2.0
10
−
−
−
8.0
15
20
25
35
45
−
−
−
30
137
180
90
230
260
V
mA
V
CURRENTS PARAMETERS
Current Consumption in OFF State (All versions)
OFF Mode Current: VIN = Vout +1.0 V, Iout = 0 mA
IQOFF
Current Consumption in ON State (All versions)
ON Mode Sat Current: Vin = Vout + 1.0 V, Iout = 0 mA
IQON
Current Consumption in Saturation ON State (All versions)
ON Mode Sat Current: VIN = 2.5 V or Vin = Vout − 0.4 V (Whichever is Higher), Iout = 0 mA
IQSAT
Current Limit Vin = Vout + 1.0 V, (All versions)
Output Short−circuited (Note 1)
IMAX
Vin = Vout + 1.0 V, TA = 25°C, 1.0 mA < Iout < 150 mA
2.5 Suffix
2.8 Suffix
3.0 Suffix
3.3 Suffix
4.0 Suffix
5.0 Suffix
Vout
Vin = Vout + 1.0 V, −40°C < TA < 85°C
2.5 Suffix
2.8 Suffix
3.0 Suffix
3.3 Suffix
4.0 Suffix
5.0 Suffix
Vout
mA
mA
mA
mA
V
V
LINE AND LOAD REGULATION, DROPOUT VOLTAGES
Line Regulation (All versions)
Vout + 1.0 V < Vin < 12 V, Iout = 60 mA
Load Regulation (All versions)
Regline
Vin = Vout + 1.0 V
Regload
Iout = 1.0 to 60 mA
mV
mV
Iout = 1.0 to 100 mA
Iout = 1.0 to 150 mA
Dropout Voltage (All versions)
Vin −
Vout
Iout = 10 mA
Iout = 100 mA
Iout = 150 mA
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3
mV
NCP623
ELECTRICAL CHARACTERISTICS (For typical values TA = 25°C, for min/max values TA = −40°C to +85°C, Max TJ = 150°C)
Characteristics
Symbol
Min
Typ
Max
Ripple Rejection (All versions)
Vin = Vout + 1.0 V, Vpp = 1.0 V, f = 1.0 kHz, Iout = 60 mA
60
70
−
Line Transient Response
Vin = Vout + 1.0 V to Vout + 4.0 V, Iout = 60 mA, d(Vin)/dt = 15 mV/ms
−
1.0
−
Unit
DYNAMIC PARAMETERS
dB
Output Noise Voltage (All versions)
Cout = 1.0 mF, Iout = 60 mA, f = 100 Hz to 100 kHz
mV
VRMS
Cbypass = 10 nF
Cbypass = 1.0 nF
mVrms
−
−
−
25
40
65
−
−
−
−
230
−
nV/
√Hz
−
−
40
1.1
−
−
ms
ms
−
150
−
°C
Cbypass = 0 nF
Output Noise Density
Cout = 1.0 mF, Iout = 60 mA, f = 1.0 kHz
VN
Output Rise Time (All versions)
Cout = 1.0 mF, Iout = 30 mA, VON/OFF = 0 to 2.4 V
1% of ON/OFF Signal to 99% of Nominal Output Voltage
tr
Without Bypass Capacitor
With Cbypass = 10 nF
THERMAL SHUTDOWN
Thermal Shutdown (All versions)
1. Iout (Output Current) is the measured current when the output voltage drops below 0.3 V with respect to Vout at Iout = 30 mA.
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NCP623
DEFINITIONS
Maximum Package Power Dissipation − The maximum
package power dissipation is the power dissipation level at
which the junction temperature reaches its maximum value
i.e. 125°C. The junction temperature is rising while the
difference between the input power (VCC X ICC) and the
output power (Vout X Iout) is increasing.
Depending on ambient temperature, it is possible to
calculate the maximum power dissipation, maximum load
current or maximum input voltage (see Application Hints:
Protection).
The maximum power dissipation supported by the device
is a lot increased when using appropriate application design.
Mounting pad configuration on the PCB, the board material
and also the ambient temperature are affected the rate of
temperature rise. It means that when the IC has good thermal
conductivity through PCB, the junction temperature will be
“low” even if the power dissipation is great.
The thermal resistance of the whole circuit can be
evaluated by deliberately activating the thermal shutdown
of the circuit (by increasing the output current or raising the
input voltage for example).
Then you can calculate the power dissipation by
subtracting the output power from the input power. All
variables are then well known: power dissipation, thermal
shutdown temperature (150°C for NCP623) and ambient
temperature.
Load Regulation − The change in output voltage for a
change in load current at constant chip temperature.
Dropout Voltage − The input/output differential at which
the regulator output no longer maintains regulation against
further reductions in input voltage. Measured when the
output drops 100 mV below its nominal value (which is
measured at 1.0 V differential), dropout voltage is affected
by junction temperature, load current and minimum input
supply requirements.
Output Noise Voltage − The RMS AC voltage at the
output with a constant load and no input ripple, measured
over a specified frequency range.
Maximum Power Dissipation − The maximum total
dissipation for which the regulator will operate within
specifications.
Quiescent Current − Current which is used to operate the
regulator chip and is not delivered to the load.
Line Regulation − The change in input voltage for a
change in the input voltage. The measurement is made under
conditions of low dissipation or by using pulse techniques
such that the average chip temperature is not significantly
affected.
Line Transient Response − Typical over− and
undershoot response when input voltage is excited with a
given slope.
Thermal Protection − Internal thermal shutdown
circuitry is provided to protect the integrated circuit in the
event that the maximum junction temperature is exceeded.
When activated, typically 150°C, the regulator turns off.
This feature is provided to prevent catastrophic failures from
accidental overheating.
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NCP623
APPLICATION HINTS
Input Decoupling − As with any regulator, it is necessary
to reduce the dynamic impedance of the supply rail that
feeds the component. A 1.0 mF capacitor either ceramic or
tantalum is recommended and should be connected close to
the NCP623 package. Higher values will correspondingly
improve the overall line transient response.
Output Decoupling − Output capacitors exhibiting ESRs
ranging from a few mW up to 3.0 W can safely be used. The
minimum decoupling value is 1.0 mF and can be augmented
to fulfill stringent load transient requirements. The regulator
works with ceramic chip capacitors as well as tantalum
devices.
Noise Performances − Unlike other LDOs, the NCP623
is a true low−noise regulator. With a 10 nF bypass capacitor,
it typically reaches 25 mVRMS overall noise between 100
Hz and 100 kHz. Spectral density graphics as well as noise
dependency versus bypass capacitor information is included
in this datasheet.
The bypass capacitor impacts the startup phase of the
NCP623 as depicted by the data−sheet curves. A typical
1.0 ms settling time is achieved with a 10 nF bypass
capacitor. However, due to its low−noise architecture, the
NCP623 can operate without bypass and thus offers a typical
20 ms startup phase. In that case, the typical output noise
stays lower than 65 mVRMS between 100 Hz − 100 kHz.
Protections − The NCP623 includes several protections
functions. The output current is internally limited to a
minimum of 175 mA while temperature shutdown occurs if
the die heats up beyond 150°C. These value lets you assess
the maximum differential voltage the device can sustain at
a given output current before its protections come into play.
The maximum dissipation the package can handle is given
by:
If a 150 mA output current is needed, the ground current
is extracted from the data−sheet curves: 6.5 mA @ 150 mA.
For a NCP623NW28R2 (2.8 V), the maximum input voltage
will then be 6.48 V, a rather comfortable margin.
Typical Application − The following figure portraits the
typical application for the NCP623 where both input/output
decoupling capacitors appear.
6
C3
1.0 mF
5
4
C2
1.0 mF
NCP623
1
2
3
Input
Output
Figure 2. A Typical NCP623 Application with
Recommended Capacitor Values (DFN6)
Output
Input
8
C2
1.0 mF
T
– T
A
P max + Jmax
R
qJA
C1
10 nF
Ptot + ǀ V @ I
(I )ǁ ) ǀV * Vout ǁ @ I out
in gnd out
in
7
6
5
C3
1.0 mF
NCP623
1
If TJmax is internally limited to 150°C, then the NCP623 can
dissipate up to 595 mW @ 25°C.
The power dissipated by the NCP623 can be calculated
from the following formula:
2
3
NC NC
4
On/Off
Figure 3. A Typical NCP623 Application with
Recommended Capacitor Values (Micro8)
or
Vin max +
C1
10 nF
On/Off
Ptot ) Vout @ I out
I
) I out
gnd
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6
NCP623
NCP623 Wake−up Improvement − In portable
applications, an immediate response to an enable signal is
vital. If noise is not a concern, the NCP623 without a bypass
capacitor settles in nearly 20 ms and typically delivers
65 mVRMS between 100 Hz and 100 kHz.
In ultra low−noise systems, the designer needs a 10 nF
bypass capacitor to decrease the noise down to 25 mVRMS
between 100 Hz and 100 kHz. With the addition of the 10 nF
capacitor, the wake−up time expands up to 1.0 ms as shown
on the data−sheet curves. If an immediate response is
wanted, Figure 5 provides a solution to charge the bypass
C4
470 pF
capacitor with the enable signal without degrading the noise
response of the NCP623.
At power−on, C4 is discharged. When the control logic
sends its wake−up signal by going high, the PNP base is
momentarily tied to ground. The PNP switch closes and
immediately charges the bypass capacitor C1 toward its
operating value. After a few ms, the PNP opens and becomes
totally transparent to the regulator.
This circuit improves the response time of the regulator
which drops from 1.0 ms down to 30 ms. The value of C4
needs to be tweaked in order to avoid any bypass capacitor
overload during the wake−up transient.
MMBT2902LT1
Q1
Input
Output
C1
10 nF
8
R2
220 k
On/Off
+
+
6
C3
1.0 mF
5
2
6
5
NCP623
1
4
2
3
+
4
On/Off
C2
+ 1.0 mF
NCP623
1
C2
1.0 mF
7
R2
220 k
C1
10 nF
3
MMBT2902LT1
Q1
Input
C4
470 pF
Output
Figure 5. A PNP Transistor Drives the
Bypass Pin when Enable Goes High (Micro8)
Figure 4. A PNP Transistor Drives the
Bypass Pin when Enable Goes High (DFN6)
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C3
1.0 mF
NCP623
NCP623 Without
Wake−up Improvement
(Typical Response)
1 ms
NCP623 With
Wake−up Improvement
(Typical Response)
30 ms
Figure 6. NCP623 Wake−up Improvement with Small PNP Transistor
The PNP connected to the bypass pin does not degrade the
noise response of the NCP623. Figure 7 displays the noise
density using the setup in Figure 5. The typical noise level
is 26 mVRM (100 Hz to 25 kHz) at IOUT = 60 mA.
350
Vin = 3.8 V
Vout = 2.8 V
Co = 1.0 mF
Iout = 60 mA
Tamb = 25°C
nV/sqrt (Hz)
300
250
200
150
Cbyp = 10 nF
100
50
0
Output Noise = 26 mVrms
C = 10 nF @ 100 Hz − 100 kHz
100
1,000
10,000
100,000
1,000,000
Frequency (Hz)
Figure 7. Noise Density of the NCP623 with a 10 nF
Bypass Capacitor and a Wake−up Improvement Network
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NCP623
TYPICAL PERFORMANCE CHARACTERISTICS
0 nF
300
nV/Hz
250
200
3.3 nF
70
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Iout = 60 mA
Tamb = 23°C
60
RMS NOISE (mA)
350
Cbyp = 10 nF
150
100
Vn = 65 mVrms @ Cbypass = 0
Vn = 30 mVrms @ Cbypass = 3.3 nF
Vn = 25 mVrms @ Cbypass = 10 nF
0 over 100 Hz to 100 kHz
100
1000
10,000
100,000
FREQUENCY (Hz)
50
50
40
30
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Iout = 60 mA
Tamb = 25°C
20
10
0
1,000,000
0
Figure 8. Noise Density versus Bypass
Capacitor
9.0
10
2.860
1 mA
2.840
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
2.800
2.795
2.820
60 mA
2.790
2.800
100 mA
2.785
−40°C
25°C
2.780
150 mA
2.780
85°C
2.760
2.775
−20
0
20
40
60
80
2.740
100
0
20
40
60
80
100
120
140
TEMPERATURE (°C)
OUTPUT CURRENT (mA)
Figure 10. Output Voltage (2.8 V) versus
Temperature
Figure 11. Output Voltage (2.8 V) versus Iout
3.015
160
3.06
3.010
3.04
1 mA
3.005
OUTPUT VOLTAGE (V)
OUTPUT VOLTAGE (V)
3.0 4.0 5.0 6.0 7.0 8.0
BYPASS CAPACITOR (nF)
Figure 9. RMS Noise versus Bypass Capacitor
(100 Hz − 100 kHz)
2.805
2.770
−40
2.0
1.0
3.000
60 mA
2.995
2.990
100 mA
2.985
2.980
150 mA
2.975
3.02
25°C
3.00
−40°C
2.98
85°C
2.96
2.970
2.965
−40
2.94
−20
0
20
40
60
80
100
0
TEMPERATURE (°C)
20
40
60
80
100
120
140 160
TEMPERATURE (°C)
Figure 12. Output Voltage (3.0 V) versus
Temperature
Figure 13. Output Voltage (3.0 V) versus Iout
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NCP623
250
250
200
200
25°C
150
−40°C
100
0
100 mA
150
60 mA
100
50
50
10
60
100
−20
0
20
40
60
80
100
IO (mA)
TEMPERATURE (°C)
Figure 14. Dropout Voltage versus Iout
Figure 15. Dropout Voltage versus Temperature
GROUND CURRENT (mA)
2.1
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Tamb = 25°C
6.0
5.0
4.0
3.0
2.0
1.0
0
10 mA
0
−40
150
7.0
0
20
40
60
80
100 120 140 160 180 200
2.05
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Iout = 60 mA
2.0
1.95
1.9
1.85
1.8
−40
−20
0
20
40
60
OUTPUT CURRENT (mA)
AMBIENT TEMPERATURE (°C)
Figure 16. Ground Current versus Output Current
Figure 17. Ground Current versus Ambient
Temperature
QUIESCENT CURRENT ON MODE (mA)
GROUND CURRENT (mA)
150 mA
85°C
DROPOUT (mV)
DROPOUT (mV)
TYPICAL PERFORMANCE CHARACTERISTICS
200
190
180
170
160
150
140
130
120
110
100
−40
−20
0
20
40
60
80
100
TEMPERATURE (°C)
Figure 18. Quiescent Current versus Temperature
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10
80
NCP623
TYPICAL PERFORMANCE CHARACTERISTICS
1200
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Iout = 60 mA
Tamb = 25°C
SETTLINE TIME (mA)
1000
800
600
200 ms/div
500 mV/div
Cbyp = 10 nF
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
Vin = 3.8 V
Vout = 2.8 V
Cout = 1.0 mF
Iout = 50 mA
Tamb = 25°C
10
BYPASS CAPACITOR (nF)
Figure 19. Output Voltage Settling Time versus
Bypass Capacitor
100 ms/div
500 mV/div
Cbyp = 3.3 nF
Figure 20. Output Voltage Settling Shape
Cbypass = 10 nF
Vin = 3.8 V
Vout = 2.8 V
Cout = 1.0 mF
Iout = 50 mA
Tamb = 25°C
10 ms/div
500 mV/div
Cbyp = 0 nF
Figure 21. Output Voltage Settling Shape
Cbypass = 3.3 nF
Vin = 3.8 V
Vout = 2.8 V
Cout = 1.0 mF
Iout = 50 mA
Tamb = 25°C
Figure 22. Output Voltage Settling Shape without
Bypass Capacitor
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NCP623
TYPICAL PERFORMANCE CHARACTERISTICS
Y1
Vin = 3.8 to 7.0 V
Y1 = 1.0 mV/div
Y2 = 1.0 V/div
X = 1.0 ms
Iout = 60 mA
Tamb = 25°C
dVin = 3.2 V
Y2
Figure 23. Line Transient Response
Y1
Y2
Vin = 3.8 V
Y1 = 100 mV/div
Y2 = 20 mV/div
X = 200 ms/div
Tamb = 25°C
Vin = 3.8 V
Y1 = 50 mA/div
Y2 = 20 mV/div
X = 20 ms
Tamb = 25°C
Y1
Y2
Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE
Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE
Figure 24. Iout = 3.0 mA to 150 mA
Figure 25. ISlope = 100 mA/ms (Large Scale)
Iout = 3.0 mA to 150 mA
Y1
Y1
Vin = 3.8 V
Y1 = 50 mA/div
Y2 = 20 mV/div
X = 100 ms
Tamb = 25°C
Y2
Vin = 3.8 V
Y1 = 50 mA/div
Y2 = 20 mV/div
X = 200 ms
Tamb = 25°C
Y2
Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE
Y1: OUTPUT CURRENT, Y2: OUTPUT VOLTAGE
Figure 26. ISlope = 6.0 mA/ms (Large Scale)
Iout = 3.0 mA to 150 mA
Figure 27. ISlope = 2.0 mA/ms (Large Scale)
Iout = 3.0 mA to 150 mA
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NCP623
100
OUTPUT CAPACITOR ESR
OUTPUT CAPACITOR ESR
10
1000
85°C
UNSTABLE
−40°C
25°C
STABLE
1.0
0.10
Cout = 1.0 mF
Vout = 3.0 V
0.01
0
UNSTABLE
100
150 mF
10
0.1 mF
0
10 20 30 40 50 60 70 80 90 100110 120130140150
OUTPUT CURRENT (mA)
Figure 28. Output Stability versus Output
Current Over Temperature (1.0 mF, 3.0 V)
Figure 29. Output Stability with Output
Capacitor Change
100
0
85°C
−20
−40°C
25°C
−30
−40
STABLE
1.0
−50
−60
−70
0.1
0.01
−80
Cout = 150 mF
Vout = 3.0 V
0
−90
−100
10 20 30 40 50 60 70 80 90 100110 120130140150
OUTPUT CURRENT (mA)
Figure 30. Output Stability versus Output
Current Over Temperature (150 mF, 3.0 V)
100
UNSTABLE
10
−40°C
STABLE
1.0
100,000
0
85°C
25°C
1000
10,000
FREQUENCY (Hz)
100
Figure 31. Ripple Rejection versus Frequency with
10 nF Bypass Capacitor
(dB)
OUTPUT CAPACITOR ESR
Vin = 3.8 V
Vout = 2.8 V
CO = 1.0 mF
Iout = 60 mA
Tamb = 25°C
−10
(dB)
OUTPUT CAPACITOR ESR
10
STABLE
1.0
10 20 30 40 50 60 70 80 90 100110 120130140150
OUTPUT CURRENT (mA)
UNSTABLE
1.0 mF
85°C
Vin = 3.8 V
Vout = 2.8 V
−20 C = 1.0 mF
O
Iout = 60 mA
−40 Tamb = 25°C
−60
25°C
UNSTABLE
0.01
−80
−40°C
0.10
0
−100
Cout = 0.0 mF
Vout = 3.0 V
−120
10 20 30 40 50 60 70 80 90 100110120130140150
10
100
1000
10,000
100,000 1,000,000
OUTPUT CURRENT (mA)
FREQUENCY (Hz)
Figure 33. Output Stability versus Output
Current Over Temperature (0.1 mF, 3.0 V)
Figure 32. Ripple Rejection versus Frequency
without Bypass Capacitor
http://onsemi.com
13
NCP623
ORDERING INFORMATION
Device
NCP623DM−28R2G
Version
Marking
2.8 V
LJA
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
NCP623DM−30R2G
3.0 V
LBJ
NCP623DM−33R2
3.3 V
LFW
NCP623DM−33R2G
NCP623DM−40R2
NCP623DM−40R2G
NCP623DM−50R2
NCP623DM−50R2G
NCP623MN−25R2G
NCP623MN−28R2G
3.3 V
4.0 V
4.0 V
5.0 V
5.0 V
2.5 V
2.8 V
LFW
LGN
LGN
LFX
LFX
25
3.0 V
30
NCP623MN−33R2
3.3 V
33
NCP623MN−40R2
4.0 V
40
NCP623MN−40R2G
NCP623MN−50R2
4.0 V
5.0 V
Shipping †
Micro8
(Pb−Free)
Micro8
(Pb−Free)
Micro8
Micro8
(Pb−Free)
4000 Tape & Reel
Micro8
Micro8
(Pb−Free)
Micro8
Micro8
(Pb−Free)
DFN6, 3x3
(Pb−Free)
28
NCP623MN−30R2G
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁ
Package
DFN6, 3x3
(Pb−Free)
DFN6, 3x3
(Pb−Free)
DFN6, 3x3
3000 Tape & Reel
DFN6, 3x3
40
DFN6, 3x3
(Pb−Free)
50
DFN6, 3x3
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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14
NCP623
PACKAGE DIMENSIONS
Micro8t
CASE 846A−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A−01 OBSOLETE, NEW STANDARD 846A−02.
D
HE
PIN 1 ID
E
e
b 8 PL
0.08 (0.003)
T B
M
S
A
S
SEATING
−T− PLANE
0.038 (0.0015)
MILLIMETERS
NOM
MAX
−−
1.10
0.08
0.15
0.33
0.40
0.18
0.23
3.00
3.10
3.00
3.10
0.65 BSC
0.40
0.55
0.70
4.75
4.90
5.05
DIM
A
A1
b
c
D
E
e
L
HE
MIN
−−
0.05
0.25
0.13
2.90
2.90
A
A1
L
c
SOLDERING FOOTPRINT*
8X
1.04
0.041
0.38
0.015
3.20
0.126
6X
8X
4.24
0.167
0.65
0.0256
5.28
0.208
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
15
INCHES
NOM
−−
0.003
0.013
0.007
0.118
0.118
0.026 BSC
0.021
0.016
0.187
0.193
MIN
−−
0.002
0.010
0.005
0.114
0.114
MAX
0.043
0.006
0.016
0.009
0.122
0.122
0.028
0.199
NCP623
PACKAGE DIMENSIONS
6 PIN DFN, 3x3x0.9
CASE 488AE−01
ISSUE B
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. TERMINAL b MAY HAVE MOLD COMPOUND
MATERIAL ALONG SIDE EDGE. MOLD
FLASHING MAY NOT EXCEED 30 MICRONS
ONTO BOTTOM SURFACE OF TERMINAL b.
EDGE OF PACKAGE
A
D
B
L1
DETAIL A
BOTTOM VIEW
E
PIN ONE
REFERENCE
ÇÇÇ
ÇÇÇ
ÇÇÇ
0.15 C
2X
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
EXPOSED Cu
MOLD COMPOUND
0.15 C
2X
TOP VIEW
DETAIL B
0.10 C
6X
0.08 C
A1
SEATING
PLANE
ÇÇÇ
ÇÇÇ
A1
(A3)
DETAIL B
SIDE VIEW
A
SOLDERING FOOTPRINT*
(A3)
2.45
0.964
C
SIDE VIEW
Ç
Ç
Ç
ÇÇÇ
Ç
ÇÇ
ÇÇ
Ç
ÇÇÇ
ÇÇÇ
ÇÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇÇÇ
ÇÇ
D2
1
6X
L
6X
K
6
MILLIMETERS
MIN
MAX
0.80
1.00
0.00
0.05
0.20
0.25
0.18
0.30
3.00 BSC
2.25
2.55
3.00 BSC
1.55
1.85
0.65 BSC
0.20
−−−
0.30
0.50
0.00 0.021
3
e
DETAIL A
6X
BOTTOM VIEW
b
1.700
0.685
3.31
0.130
E2
4
Exposed Pad
SMD Defined
NOTE 3
0.63
0.025
0.10 C A B
ÇÇ
ÇÇ
ÇÇÇÇ
ÇÇ
ÇÇ
0.05 C
0.65
0.025
0.35
0.014
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
Micro8 is a trademark of International Rectifier.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
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Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
http://onsemi.com
16
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NCP623/D