DMP2035UVT -20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS Features and Benefits RDS(ON) Max ID Low Input Capacitance TA = +25°C Low On-Resistance Fast Switching Speed ESD Protected up to 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 35mΩ @ VGS = -4.5V -6.0A 45mΩ @ VGS = -2.5V -5.2A -20V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e3 Weight: 0.013 grams (Approximate) ideal for high-efficiency power management applications. DC-DC Converters Motor Control Power Management Functions Analog Switch Drain TSOT26 ESD PROTECTED TO 3kV D 1 6 D D 2 5 D G 3 4 S Gate Gate Protection Diode Top View Pin-Out Top View Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP2035UVT-7 DMP2035UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 20P Date Code Key Year Code Month Code 2011 Y Jan 1 ~ ~ Feb 2 DMP2035UVT Document number: DS35190 Rev. 7 - 2 2016 D Mar 3 YM Marking Information 2017 E Apr 4 May 5 20P = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 2021 I Oct O 2022 J Nov N Dec D May 2016 © Diodes Incorporated DMP2035UVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State t<10s Continuous Drain Current (Note 6) VGS = -2.5V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value -20 ±12 -6.0 -4.8 ID -7.2 -5.7 A ID -5.2 -4.1 A A -6.2 -4.9 -2.0 -24 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Unit V V IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RJA Total Power Dissipation (Note 6) PD Steady State t<10s Steady State Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RJA RJC TJ, TSTG Unit W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note7) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Value 1.2 106 74 2.0 65 46 11.8 -55 to +150 Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 -1 10 V µA µA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS(TH) -0.4 -0.7 -1.5 V VDS = VGS, ID = -250µA VGS(TH)/△TJ 2.5 mV/°C 23 30 41 18 -0.7 35 45 62 -1.0 1,610 157 145 9.4 15.4 2.5 3.3 17 12 94 42 14 4 2,400 210 200 14.1 23.1 33 19 150 64 25 8 △ RDS(ON) |Yfs| VSD Ciss Coss Crss RG Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR mΩ S V Test Condition ID = -250µA ,Referenced to +25°C VGS = -4.5V, ID = -4.0A VGS = -2.5V, ID = -4.0A VGS = -1.8V, ID = -2.0A VDS = -5V, ID = -5.5A VGS = 0V, IS = -1A pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -10V, VGS = -4.5V ID = -4A ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω ns nC IF =-4.5A, di/dt=100A/µS 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2035UVT Document number: DS35190 Rev. 7 - 2 2 of 6 www.diodes.com May 2016 © Diodes Incorporated DMP2035UVT 20 25 VGS = -8.0V VDS = -5.0V VGS = -4.5V 20 )A ( T N E 15 R R U C N IA 10 R D ,D -I 5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.5V VGS = -2.0V VGS = -3.2V VGS = -3.0V VGS = -2.5V 15 10 TA = 150C 5 TA = 125 C VGS = -1.5V TA = 85C TA = 25C 0 0 1 2 3 4 -VDS , DRAIN -SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.06 0.05 0.04 0.03 0.02 0.1 1 10 -ID, DRAIN SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 100 RDS(on), DRAIN-SOURCE ON-RESISTANCE ( ) 1.7 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.07 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 T J, JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature DMP2035UVT Document number: DS35190 Rev. 7 - 2 TA = -55C 0 3 of 6 www.diodes.com 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3.0 0.05 VGS = -4.5V TA = 150C 0.04 TA = 125C TA = 85C 0.03 TA = 25C 0.02 0.01 TA = -55C 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 VGS = -2.5V ID = -5A 0.04 0.03 VGS = -4.5V ID = -10A 0.02 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature May 2016 © Diodes Incorporated DMP2035UVT 20 18 1.0 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE(V) 1.2 0.8 0.6 0.4 14 12 10 8 6 4 0.2 2 0 -50 0 -25 0 25 50 75 100 125 150 o TA, AMBIENT TEMPERATURE ((癈 C)) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 100,000 10,000 TA = 150°C TA = 150°C )A n 10,000 ( T N E R R 1,000 U C E G A K 100 A E L ,S TA = 125°C TA = 85°C -I -IDSS, LEAKAGE CURRENT (nA) -IDSS, LEAKAGE CURRENT (nA) )A n ( 1,000 T N E R R U C E 100 G A K A E L ,S S 10 D -I S G TA = 125°C TA = 85°C TA = 25°C TA = -55°C 10 TA = -55°C TA = 25°C 1 1 2 4 6 8 10 12 14 16 18 20 -VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Drain-Source Leakage Current vs. Voltage 2 4 6 8 10 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 10 Typical Gate-Source Leakage Current vs. Voltage 10,000 10 -VGS, GATE-SOURCE VOLTAGE (V) C T, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1,000 Coss 100 8 6 4 2 C rss 0 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 Typical Junction Capacitance DMP2035UVT Document number: DS35190 Rev. 7 - 2 4 of 6 www.diodes.com 0 0 4 8 12 16 20 24 28 32 36 40 Qg, TOTAL GATE CHARGE (nC) Fig. 12 Gate-Charge Characteristics May 2016 © Diodes Incorporated DMP2035UVT r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 R(t) = r(t)R * θJA RJA RθJA = r(t)* JA(t) o RθJA = 88 C/W/W RJA = 88癈 Duty Cycle, Duty Cycle,DD== t1/t2 t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e L2 01(4x) b A2 A A1 Seating Plane DMP2035UVT Document number: DS35190 Rev. 7 - 2 5 of 6 www.diodes.com Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC θ 0° 8° 4° θ1 4° 12° All Dimensions in mm May 2016 © Diodes Incorporated DMP2035UVT Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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