Diodes DMP2035UVT-7 -20v p-channel enhancement mode mosfet Datasheet

DMP2035UVT
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
Features and Benefits
RDS(ON) Max
ID

Low Input Capacitance
TA = +25°C

Low On-Resistance

Fast Switching Speed




ESD Protected up to 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
35mΩ @ VGS = -4.5V
-6.0A
45mΩ @ VGS = -2.5V
-5.2A
-20V
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it


Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
ideal for high-efficiency power management applications.







DC-DC Converters
Motor Control
Power Management Functions
Analog Switch

Drain
TSOT26
ESD PROTECTED TO 3kV
D
1
6
D
D
2
5
D
G
3
4
S
Gate
Gate
Protection
Diode
Top View
Pin-Out
Top View
Source
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2035UVT-7
DMP2035UVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
20P
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
~
~
Feb
2
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
2016
D
Mar
3
YM
Marking Information
2017
E
Apr
4
May
5
20P = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
2018
F
Jun
6
1 of 6
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2019
G
Jul
7
Aug
8
2020
H
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
May 2016
© Diodes Incorporated
DMP2035UVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = -4.5V
Steady
State
t<10s
Continuous Drain Current (Note 6) VGS = -2.5V
Steady
State
t<10s
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
ID
Value
-20
±12
-6.0
-4.8
ID
-7.2
-5.7
A
ID
-5.2
-4.1
A
A
-6.2
-4.9
-2.0
-24
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Unit
V
V
IS
IDM
A
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
RJA
RJC
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note7)
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Value
1.2
106
74
2.0
65
46
11.8
-55 to +150
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20






-1
10
V
µA
µA
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS(TH)
-0.4
-0.7
-1.5
V
VDS = VGS, ID = -250µA
VGS(TH)/△TJ

2.5

mV/°C





23
30
41
18
-0.7
35
45
62

-1.0













1,610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
2,400
210
200
14.1
23.1


33
19
150
64
25
8
△
RDS(ON)
|Yfs|
VSD
Ciss
Coss
Crss
RG
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
mΩ
S
V
Test Condition
ID = -250µA ,Referenced to +25°C
VGS = -4.5V, ID = -4.0A
VGS = -2.5V, ID = -4.0A
VGS = -1.8V, ID = -2.0A
VDS = -5V, ID = -5.5A
VGS = 0V, IS = -1A
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -10V, VGS = -4.5V
ID = -4A
ns
VGS = -4.5V, VDS = -10V, RG = 6Ω,
ID = -1A, RL = 10Ω
ns
nC
IF =-4.5A, di/dt=100A/µS
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
2 of 6
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May 2016
© Diodes Incorporated
DMP2035UVT
20
25
VGS = -8.0V
VDS = -5.0V
VGS = -4.5V
20
)A
(
T
N
E 15
R
R
U
C
N
IA 10
R
D
,D
-I
5
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -3.5V
VGS = -2.0V
VGS = -3.2V
VGS = -3.0V
VGS = -2.5V
15
10
TA = 150C
5
TA = 125 C
VGS = -1.5V
TA = 85C
TA = 25C
0
0
1
2
3
4
-VDS , DRAIN -SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
5
0.06
0.05
0.04
0.03
0.02
0.1
1
10
-ID, DRAIN SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
100
RDS(on), DRAIN-SOURCE ON-RESISTANCE ( )
1.7
1.5
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (Normalized)
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
RDS(ON),DRAIN-SOURCE ON-RESISTANCE()
0.07
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
T J, JUNCTION TEMPERATURE ( C)
Fig. 5 On-Resistance Variation with Temperature
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
TA = -55C
0
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0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
3.0
0.05
VGS = -4.5V
TA = 150C
0.04
TA = 125C
TA = 85C
0.03
TA = 25C
0.02
0.01
TA = -55C
0
4
8
12
16
-ID, DRAIN SOURCE CURRENT (A)
Fig. 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
VGS = -2.5V
ID = -5A
0.04
0.03
VGS = -4.5V
ID = -10A
0.02
0.01
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 6 On-Resistance Variation with Temperature
May 2016
© Diodes Incorporated
DMP2035UVT
20
18
1.0
16
-IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE(V)
1.2
0.8
0.6
0.4
14
12
10
8
6
4
0.2
2
0
-50
0
-25
0
25
50
75 100 125 150
o
TA, AMBIENT TEMPERATURE ((癈
C))
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.3
0.6
0.9
1.2
1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
10,000
TA = 150°C
TA = 150°C
)A
n 10,000
(
T
N
E
R
R 1,000
U
C
E
G
A
K
100
A
E
L
,S
TA = 125°C
TA = 85°C
-I
-IDSS, LEAKAGE CURRENT (nA)
-IDSS, LEAKAGE CURRENT (nA)
)A
n
( 1,000
T
N
E
R
R
U
C
E
100
G
A
K
A
E
L
,S
S
10
D
-I
S
G
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
10
TA = -55°C
TA = 25°C
1
1
2
4
6
8
10 12 14 16 18 20
-VDS , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
2
4
6
8
10
-V GS, GATE-SOURCE VOLTAGE (V)
Fig. 10 Typical Gate-Source Leakage Current vs. Voltage
10,000
10
-VGS, GATE-SOURCE VOLTAGE (V)
C T, JUNCTION CAPACITANCE (pF)
f = 1MHz
Ciss
1,000
Coss
100
8
6
4
2
C rss
0
2
4
6
8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Junction Capacitance
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
4 of 6
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0
0
4
8 12 16 20 24 28 32 36 40
Qg, TOTAL GATE CHARGE (nC)
Fig. 12 Gate-Charge Characteristics
May 2016
© Diodes Incorporated
DMP2035UVT
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
0.01
D = 0.01
R(t)
= r(t)R
* θJA
RJA
RθJA
= r(t)*
JA(t)
o
RθJA
= 88
C/W/W
RJA
= 88癈
Duty
Cycle,
Duty
Cycle,DD== t1/t2
t1/ t2
D = 0.005
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 13 Transient Thermal Resistance
10
100
1,000
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSOT26
D
e1
01(4x)
E1/2
E/2
E1
c
E
Gauge Plane
0
L
e
L2
01(4x)
b
A2
A
A1
Seating Plane
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
5 of 6
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Seating Plane
TSOT26
Dim
Min
Max
Typ
A
1.00


A1
0.010 0.100

A2
0.840 0.900

D
2.800 3.000 2.900
E
2.800 BSC
E1
1.500 1.700 1.600
b
0.300 0.450

c
0.120 0.200

e
0.950 BSC
e1
1.900 BSC
L
0.30
0.50

L2
0.250 BSC
θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
May 2016
© Diodes Incorporated
DMP2035UVT
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
TSOT26
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y
X
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Copyright © 2016, Diodes Incorporated
www.diodes.com
DMP2035UVT
Document number: DS35190 Rev. 7 - 2
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May 2016
© Diodes Incorporated
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