IRLMS1503PbF-1
HEXFET® Power MOSFET
VDS
30
RDS(on) max
V
0.10
(@VGS = 10V)
Ω
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
1
6
D
2
5
D
G
3
4
S
0.20
6.4
nC
3.2
A
Package Type
IRLMS1503TRPbF-1
Micro6™
Micro6™
Top View
Features
Industry-standard pinout Micro-6 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
A
D
D
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLMS1503TRPbF-1
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
V GS
dv/dt
TJ, TSTG
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Units
3.2
2.6
18
1.7
13
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
Maximum Junction-to-Ambient
1
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Min.
Typ.
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Max
Units
75
°C/W
June 30, 2014
IRLMS1503PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V (BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
1.0
1.1
Typ.
0.037
6.4
1.1
1.9
4.6
4.4
10
2.0
210
90
32
Max. Units
Conditions
V
V GS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.100
V GS = 10V, ID = 2.2A
Ω
0.20
V GS = 4.5V, ID = 1.1A
V
V DS = V GS, ID = 250µA
S
V DS = 10V, I D = 1.1A
1.0
V DS = 24V, V GS = 0V
µA
25
V DS = 24V, VGS = 0V, TJ = 125°C
-100
V GS = -20V
nA
100
V GS = 20V
9.6
I D = 2.2A
1.7
nC V DS = 24V
2.8
V GS = 10V, See Fig. 6 and 9
V DD = 15V
I D = 2.2A
ns
R G = 6.0Ω
R D = 6.7Ω, See Fig. 10
V GS = 0V
pF
V DS = 25V
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
V SD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
1.7
18
36
39
1.2
54
58
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.2A, VGS = 0V
TJ = 25°C, I F = 2.2A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ISD ≤ 2.2A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
Surface mounted on FR-4 board, t ≤ 5sec.
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
2
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June 30, 2014
IRLMS1503PbF-1
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
3.0V
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
1
3.0V
20μs PULSE WIDTH
TJ = 150 °C
1
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
0.1
0.1
10
100
TJ = 25 ° C
10
TJ = 150 ° C
1
0.1
3.0
V DS = 10V
20μs PULSE WIDTH
4.0
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM3.0V
TOP
TOP
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ID = 2.2A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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June 30, 2014
IRLMS1503PbF-1
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
300
250
Ciss
200
Coss
150
100
Crss
50
0
20
VGS , Gate-to-Source Voltage (V)
350
10
VDS = 24V
VDS = 15V
16
12
8
4
0
1
ID = 2.2A
100
FOR TEST CIRCUIT
SEE FIGURE 9
0
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
6
8
10
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
4
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 150 ° C
TJ = 25 ° C
1
0.1
0.4
10us
10
100us
1ms
1
10ms
TC = 25° C
TJ = 150° C
Single Pulse
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
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1.6
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLMS1503PbF-1
VDS
QG
10V
QGS
VGS
QGD
RD
D.U.T.
RG
+
- VDD
VG
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
VDS
90%
50KΩ
.2μF
12V
.3μF
D.U.T.
+
V
- DS
10%
VGS
VGS
td(on)
3mA
IG
tr
t d(off)
tf
ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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IRLMS1503PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-channel HEXFET® power MOSFET s
6
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IRLMS1503PbF-1
Micro6 (SOT23 6L) Package Outline
Dimensions are shown in milimeters (inches)
3.00 (.118 )
2.80 (.111 )
1.75 (.068 )
1.50 (.060 )
-A-
LEAD ASSIGNMENTS
-B-
6
5
4
1
2
3
3.00 (.118 )
2.60 (.103 )
0.95 ( .0375 )
6X
2X
D
D
6
5
4
1
2
3
D
D
G
RECOMMENDED FOOTPRINT
2X 0.95 (.0375 )
S
6X (1.06 (.042 )
2.20 (.087 )
0.50 (.019 )
0.35 (.014 )
6X 0.65 (.025 )
0.15 (.006 ) M C A S B S
O
O
0 -10
1.30 (.051 )
0.90 (.036 )
-C-
6X
1.45 (.057 )
0.90 (.036 )
0.10 (.004 )
6 SURFACES
0.15 (.006 )
MAX.
0.20 (.007 )
0.09 (.004 )
0.60 (.023 )
0.10 (.004 )
NOTES :
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : MILLIMETER.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
Micro6 (SOT23 6L) Part Marking Information
W = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR
Y = YEAR
W = WEEK
PART NUMBER
T OP
LOT
CODE
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
PART NUMBER CODE REFERENCE:
A=
B=
C=
D=
E=
F=
G=
H=
IRLMS1902
IRLMS 1503
IRLMS6702
IRLMS5703
IRLMS 6802
IRLMS4502
IRLMS2002
IRLMS6803
Note: A line above the work week
(as shown here) indicates Lead-Free.
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
7
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June 30, 2014
IRLMS1503PbF-1
Micro6 Tape & Reel Information (Dimensions are shown in milimeters (inches))
8mm
4mm
FEED DIRECTION
NOTES :
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Qualification level
Moisture Sensitivity Level
Industrial
(per JE DEC JE S D47F
Micro6™
RoHS compliant
††
guidelines)
MS L1
††
(per JE DE C J-S TD-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
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