H11F1M, H11F2M, H11F3M Photo FET Optocouplers tm Features General Description As a remote variable resistor: ■ ≤ 100Ω to ≥ 300MΩ ■ ≥ 99.9% linearity ■ ≤ 15pF shunt capacitance ■ ≥ 100GΩ I/O isolation resistance The H11FXM series consists of a Gallium-AluminumArsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The H11FXM series devices are mounted in dual in-line packages. As an analog switch: ■ Extremely low offset voltage ■ 60 Vpk-pk signal capability ■ No charge injection or latch-up ■ ton, toff ≤ 15µS ■ UL recognized (File #E90700) Applications As a remote variable resistor: ■ Isolated variable attenuator ■ Automatic gain control ■ Active filter fine tuning/band switching As an analog switch: ■ Isolated sample and hold circuit ■ Multiplexed, optically isolated A/D conversion Packages ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 Schematic ANODE 1 6 CATHODE 2 5 3 4 OUTPUT TERM. OUTPUT TERM. www.fairchildsemi.com H11F1M, H11F2M, H11F3M Photo FET Optocouplers May 2007 Symbol Parameter Device Value Units TOTAL DEVICE TSTG Storage Temperature All -55 to +150 °C TOPR Operating Temperature All -40 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C IF Continuous Forward Current All 60 mA VR Reverse Voltage All 5 V EMITTER IF(pk) PD Forward Current – Peak (10 µs pulse, 1% duty cycle) All 1 A LED Power Dissipation 25°C Ambient All 100 mW 1.33 mW/°C Derate Linearly from 25°C DETECTOR PD Detector Power Dissipation @ 25°C All Derate linearly from 25°C BV4-6 I4-6 Breakdown Voltage (either polarity) H11F1M, H11F2M Continuous Detector Current (either polarity) ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 300 mW 4.0 mW/°C ±30 V H11F3M ±15 V All ±100 mA www.fairchildsemi.com 2 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Absolute Maximum Ratings (TA = 25°C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit 1.3 1.75 V 10 µA EMITTER VF Input Forward Voltage IF = 16mA All IR Reverse Leakage Current VR = 5V All CJ Capacitance V = 0 V, f = 1.0 MHz All 50 pF OUTPUT DETECTOR BV4-6 I4-6 Breakdown Voltage Either Polarity Off-State Dark Current I4-6 = 10µA, IF = 0 H11F1M, H11F2M 30 H11F3M 15 V V4-6 = 15 V, IF = 0 All 50 nA V4-6 = 15 V, IF = 0, TA = 100°C All 50 µA R4-6 Off-State Resistance V4-6 = 15 V, IF = 0 All C4-6 Capacitance V4-6 = 15 V, IF = 0, f = 1MHz All MΩ 300 15 pF Transfer Characteristics Symbol Characteristics Test Conditions Device Min Typ* Max Units H11F1M 200 Ω H11F2M 330 H11F3M 470 H11F1M 200 H11F2M 330 H11F3M 470 IF = 16mA, I4-6 = 25µA RMS, f = 1kHz All 0.1 % DC CHARACTERISTICS R4-6 R6-4 On-State Resistance On-State Resistance Resistance, non-linearity and assymetry IF = 16mA, I4-6 = 100µA IF = 16mA, I6-4 = 100µA Ω AC CHARACTERISTICS ton Turn-On Time RL = 50Ω, IF = 16mA, V4-6 = 5V All 25 µS toff Turn-Off Time RL = 50Ω, IF = 16mA, V4-6 = 5V All 25 µS Isolation Characteristics Symbol Device Min. VISO Isolation Voltage Characteristic f = 60Hz, t = 1 sec. Test Conditions All 7500 RISO Isolation Resistance VI-O = 500 VDC All 1011 CISO Isolation Capacitance f = 1MHz All Typ.* Max. Units VACPEAK Ω 0.2 pF *All Typical values at TA = 25°C ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 www.fairchildsemi.com 3 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Electrical Characteristics (TA = 25°C unless otherwise specified.) Figure 1. Resistance vs. Input Current Figure 2. Output Characteristics I46 - OUTPUT CURRENT (µA) 10 1 600 IF = 14mA 400 IF = 10mA IF = 6mA 200 IF = 6mA -200 IF = 10mA -400 IF = 14mA IF = 18mA -800 1 1 0 -0.2 100 -0.1 Figure 3. LED Forward Voltage vs. Forward Current 0.1 0.2 Figure 4. Off-state Current vs. Ambient Temperature 10000 2.0 NORMALIZED TO: V46 = 15V IF = 0mA TA = 25°C I46 - NORMALIZED DARK CURRENT 1.8 VF - FORWARD VOLTAGE (V) 0.0 V46 - OUTPUT VOLTAGE (V) IF - INPUT CURRENT - mA 1.6 1.4 TA = -55°C TA = 25°C 1.2 1.0 TA = 100°°C 1000 100 10 0.8 1 0.1 1 10 0 100 100 80 V4-6 - MAXIMUM RMS SIGNAL VOLTAGE - mV NORMALIZED TO IF = 16mA I4-6 = 25µA RMS TA = 25°C 2 n dia Me ice v De Observed Range 1K 1 0.8 0.6 0.4 -50 -25 0 25 50 75 TA - AMBIENT TEMPERATURE - °C ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 40 80 60 100 Figure 6. Region of Linear Resistance Figure 5. Resistance vs. Temperature 3 20 TA - AMBIENT TEMPERATURE (°C) IF - LED FORWARD CURRENT - mA r(on) - NORMALIZED RESISTANCE IF = 2mA IF = 2mA 0 -600 Normalized to: IF = 16 mA I46 = 5 µA RMS 0.1 IF = 18mA MAXIMUM RMS VOLTAGE 60 60 40 40 20 20 10 8 10 8 6 6 MAXIMUM RMS CURRENT 4 4 2 1 100 100 100 80 2 1000 10K I4-6 - MAXIMUM RMS SIGNAL CURRENT - µA r(on) - Normalized Resistance 800 100K r(on) RESISTANCE - Ω www.fairchildsemi.com 4 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Typical Performance Curves H11F1M, H11F2M, H11F3M Photo FET Optocouplers Figure 7. Resistive non-linearity vs. D.C. Bias r(on) - CHANGE IN RESISTANCE – % 5 4 3 2 I4-6 = 10µA RMS r(on) = 200Ω 1 0 1 50 100 150 200 250 300 350 V4-6 - D.C. BIAS VOLTAGE - mA ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 www.fairchildsemi.com 5 As a Variable Resistor As an Analog Signal Switch ISOLATED SAMPLE AND HOLD CIRCUIT ISOLATED VARIABLE ATTENUATORS 500K + VIN VOUT VIN VIN 50 - VOUT VIN H11F1M H11F1M C IF IF IF VOUT H11F1M VOUT t IF LOW FREQUENCY HIGH FREQUENCY @1MHz DYNAMIC RANGE 50db FOR 0 ≤ IF ≤ 30mA @10KHz DYNAMIC RANGE 70db FOR 0 ≤ IF ≤ 30mA Distortion free attenuation of low level A.C. signals is accomplished by varying the IRED current, IF Note the wide dynamic range and absence of coupling capacitors; D.C. level shifting or parasitic feedback to the controlling function. AUTOMATIC GAIN CONTROL Accuracy and range are improved over conventional FET switches because the H11FXM has no charge injection from the control signal. The H11FXM also provides switching of either polarity input signal up to 30V magnitude. . MULTIPLEXED, OPTICALLY-ISOLATED A/D CONVERSION CALL V1 H11F1M CALL Vn DATA ACQUISITION VOUT V1 V2 + H74A1 A/D CONVERTER Vn H11F1M MSB MSB - DATA INPUT VIN LSB H74A1 500K PROCESS CONTROL LOGIC SYSTEM LSB H11F1M IF AGC SIGNAL This simple circuit provides over 70db of stable gain control for an AGC signal range of from 0 to 30mA. This basic circuit can be used to provide programmable fade and attack for electronic music. The optical isolation, linearity and low offset voltage of the H11FXM allows the remote multiplexing of low level analog signals from such transducers as thermocouplers, Hall effect devices, strain gauges, etc. to a single A/D converter. ACTIVE FILTER FINE TUNING/BAND SWITCHING IF1 TEST EQUIPMENT - KELVIN CONTACT POLARITY IF2 H11F1M H11F1M H11F1M IF H11F1M IF A A1 A2 C ITEST A3 DEVICE UNDER TEST PARAMETER SENSING BOARD H11F1M C & D FOR POLARITY 2 D B IF IF TO A & B FOR POLARITY 1 IF H11F1M IF1 ADJUSTS f1, IF2 ADJUSTS f2 The linearity of resistance and the low offset voltage of the H11FXM allows the remote tuning or band-switching of active filters without switching glitches or distortion. This schematic illustrates the concept, with current to the H11F1M IRED’s controlling the filter’s transfer characteristic. ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 In many test equipment designs the auto polarity function uses reed relay contacts to switch the Kelvin Contact polarity. These reeds are normally one of the highest maintenance cost items due to sticking contacts and mechanical problems. The totally solid-State H11FXM eliminates these troubles while providing faster switching. www.fairchildsemi.com 6 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Typical Applications Through Hole Surface Mount 0.350 (8.89) 0.320 (8.13) 0.350 (8.89) 0.320 (8.13) 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.260 (6.60) 0.240 (6.10) 0.390 (9.90) 0.332 (8.43) 0.070 (1.77) 0.040 (1.02) 0.320 (8.13) 0.320 (8.13) 0.014 (0.36) 0.010 (0.25) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.012 (0.30) 0.008 (0.20) 0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 0.100 [2.54] 15° 0.4" Lead Spacing 0.035 (0.88) 0.006 (0.16) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) Recommended Pad Layout for Surface Mount Leadform 0.350 (8.89) 0.320 (8.13) 0.070 (1.78) 0.060 (1.52) 0.260 (6.60) 0.240 (6.10) 0.425 (10.79) 0.070 (1.77) 0.040 (1.02) 0.100 (2.54) 0.305 (7.75) 0.014 (0.36) 0.010 (0.25) 0.030 (0.76) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.012 (0.30) 0.008 (0.21) 0.100 [2.54] 0.425 (10.80) 0.400 (10.16) Note: All dimensions are in inches (millimeters). ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 www.fairchildsemi.com 7 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Package Dimensions Option Order Entry Identifier (Example) No option H11F1M S H11F1SM SR2 H11F1SR2M T H11F1TM 0.4" Lead Spacing V H11F1VM VDE 0884 TV H11F1TVM VDE 0884, 0.4" Lead Spacing SV H11F1SVM VDE 0884, Surface Mount SR2V H11F1SR2VM Description Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 V 3 H11F1M 2 X YY Q 6 4 5 Definitions ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code, e.g., ‘7’ 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code www.fairchildsemi.com 8 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Ordering Information 12.0 ± 0.1 4.5 ± 0.20 2.0 ± 0.05 Ø1.5 MIN 4.0 ± 0.1 0.30 ± 0.05 1.75 ± 0.10 11.5 ± 1.0 21.0 ± 0.1 9.1 ± 0.20 Ø1.5 ± 0.1/-0 10.1 ± 0.20 0.1 MAX 24.0 ± 0.3 User Direction of Feed Reflow Profile 300 280 260 240 220 200 180 160 °C 140 120 100 80 60 40 20 0 260°C >245°C = 42 Sec Time above 183°C = 90 Sec 1.822°C/Sec Ramp up rate 33 Sec 0 60 120 180 270 360 Time (s) ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 www.fairchildsemi.com 9 H11F1M, H11F2M, H11F3M Photo FET Optocouplers Carrier Tape Specifications The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® PDP-SPM™ Power220® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ The Power Franchise® ™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I28 ©2007 Fairchild Semiconductor Corporation H11FXM Rev. 1.0.0 www.fairchildsemi.com 10 H11F1M, H11F2M, H11F3M Photo FET Optocouplers TRADEMARKS