BLF6G27L-40P;
BLF6G27LS-40P(G)
Power LDMOS transistor
Rev. 3 — 14 January 2015
Product data sheet
1. Product profile
1.1 General description
40 W LDMOS power transistor for base station applications at frequencies from
2500 MHz to 2700 MHz, also suitable for operation at 2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
f
IDq
VDS
PL(AV)
Gp
D
(MHz)
(mA)
(V)
(W)
(dB)
(%) (dBc)
2500 to 2700
450
28
12
17.5
30
46 [1]
-
Single carrier W-CDMA 2500 to 2700
450
28
20
17.5
37
-
35 [2]
Test signal
IS-95
ACPR885k ACPR5M
(dBc)
[1]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
[2]
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low thermal resistance providing excellent thermal stability
Designed for broadband operation (2500 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Design optimized for gull-wing and straight lead versions
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2500 MHz to 2700 MHz frequency range
BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF6G27L-40P (SOT1121A)
1
drain1
2
drain2
3
gate1
4
gate2
5
[1]
source
V\P
BLF6G27LS-40P (SOT1121B)
1
drain1
2
drain2
3
gate1
4
gate2
5
source
[1]
V\P
BLF6G27LS-40PG (SOT1121E)
1
drain1
2
drain2
3
gate1
4
gate2
5
[1]
source
V\P
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
Version
BLF6G27L-40P
-
flanged LDMOST ceramic package; 2 mounting holes; SOT1121A
4 leads
BLF6G27LS-40P
-
earless flanged ceramic package; 4 leads
SOT1121B
BLF6G27LS-40PG
-
earless flanged LDMOST ceramic package; 4 leads
SOT1121E
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
+150
C
-
225
C
[1]
junction temperature
Tj
[1]
Conditions
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 40 W
0.7
K/W
6. Characteristics
Table 6.
Characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.4 mA
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
Min
Typ
Max
Unit
65
-
-
V
1.4
1.8
2.4
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 40 mA
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
5.96
7.2
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
150
nA
gfs
forward transconductance
VDS = 10 V;
ID = 2000 mA
1.8
2.9
-
S
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 1400 mA
0.14
0.36
-
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
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Power LDMOS transistor
7. Test information
Table 7.
Functional test information
Test signal: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic channels
(Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288
MHz; f1 = 2500 MHz; f2 = 2700 MHz; RF performance at VDS = 28 V; IDq = 450 mA; Tcase = 25 C; 2
sections combined unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min Typ Max Unit
Gp
power gain
PL(AV) = 12 W
15.5 17.5 -
dB
RLin
input return loss
PL(AV) = 12 W
-
10 -
dB
D
drain efficiency
PL(AV) = 12 W
26
30
ACPR885k
adjacent channel power ratio (885 kHz)
PL(AV) = 12 W
-
46 41
-
%
dBc
7.1 Ruggedness in class-AB operation
The BLF6G27L-40P, BLF6G27LS-40P and BLF6G27LS-40PG are capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 28 V; IDq = 450 mA; PL = 40 W (CW); f = 2500 MHz.
7.2 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
DDQ
DDQ
Ș '
*S
G%
3/ :
VDS = 28 V; IDq = 450 mA.
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Single carrier IS-95 power gain as a function of
output power; typical values
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
3/ :
(1) f = 2500 MHz
Fig 1.
Fig 2.
Single carrier IS-95 drain efficiency as a
function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
DDQ
$3&5
G%F
$3&5
G%F
DDQ
3/ :
VDS = 28 V; IDq = 450 mA.
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Fig 3.
Single carrier IS-95 ACPR at 885 kHz as a
function of output power; typical values
DDQ
3$5
G%
Fig 4.
Single carrier IS-95 ACPR at 1980 kHz as a
function of output power; typical values
DDQ
3/ 0 :
3/ :
VDS = 28 V; IDq = 450 mA.
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Single carrier IS-95 peak-to-average power
ratio as a function of output power;
typical values
Product data sheet
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
BLF6G27L-40P_LS-40P_LS-40PG
3/ :
(1) f = 2500 MHz
Fig 5.
3/ :
Fig 6.
Single carrier IS-95 peak output power as a
function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
7.3 Pulsed CW
DDQ
*S
G%
DDQ
Ș '
3/ :
VDS = 28 V; IDq = 450 mA.
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Fig 7.
Pulsed CW power gain as a function of output
power; typical values
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
3/ :
Fig 8.
Pulsed CW drain efficiency as a function of
output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
7.4 Single carrier W-CDMA
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
Channel bandwidth is 3.84 MHz.
DDQ
DDQ
Ș '
*S
G%
3/ :
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Single carrier W-CDMA power gain as a
function of output power; typical values
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
3/ :
VDS = 28 V; IDq = 450 mA.
Fig 9.
Fig 10. Single carrier W-CDMA drain efficiency as a
function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
7 of 15
BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
DDQ
$3&50
G%F
DDQ
$3&50
G%F
3/ :
3/ :
VDS = 28 V; IDq = 450 mA.
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Fig 11. Single carrier W-CDMA ACPR at 5 MHz as a
function of output power; typical values
DDQ
3$5
G%
Fig 12. Single carrier W-CDMA ACPR at 10 MHz as a
function of output power; typical values
DDQ
3/ 0 :
3/ :
VDS = 28 V; IDq = 450 mA.
VDS = 28 V; IDq = 450 mA.
(1) f = 2500 MHz
(2) f = 2550 MHz
(2) f = 2550 MHz
(3) f = 2600 MHz
(3) f = 2600 MHz
(4) f = 2650 MHz
(4) f = 2650 MHz
(5) f = 2700 MHz
(5) f = 2700 MHz
Fig 13. Single carrier W-CDMA peak-to-average power
ratio as a function of output power;
typical values
Product data sheet
3/ :
(1) f = 2500 MHz
BLF6G27L-40P_LS-40P_LS-40PG
Fig 14. Single carrier W-CDMA peak output power as a
function of output power; typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
8. Package outline
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BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
9 of 15
BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
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BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
10 of 15
BLF6G27L-40P;BLF6G27LS-40P(G)
NXP Semiconductors
Power LDMOS transistor
(DUOHVVIODQJHG/'0267FHUDPLFSDFNDJHOHDGV
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Fig 17. Package outline SOT1121E
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
11 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 8.
Abbreviations
Acronym
Description
3GPP
3rd Generation Partnership Project
CCDF
Complementary Cumulative Distribution Function
CW
Continuous Wave
DPCH
Dedicated Physical CHannel
ESD
ElectroStatic Discharge
IS-95
Interim Standard 95
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal Oxide Semiconductor Transistor
MTF
Median Time to Failure
N-CDMA
Narrowband Code Division Multiple Access
PAR
Peak-to-Average Ratio
VSWR
Voltage Standing Wave Ratio
W-CDMA
Wideband Code Division Multiple Access
11. Revision history
Table 9.
Revision history
Document ID
Release date
BLF6G27L-40P_27LS-40P_27LS-40PG v.3 20150114
Modifications:
•
Data sheet status
Change notice Supersedes
Product data sheet -
BLF6G27L-40P_27LS
-40P_27LS-40PG v.2
Section 1.1 on page 1: description updated
BLF6G27L-40P_27LS-40P_27LS-40PG v.2 20141114
Product data sheet -
BLF6G27L-40P_6G27
LS-40P v.1
BLF6G27L-40P_6G27LS-40P v.1
Product data sheet -
-
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
20110704
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
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BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
13 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
BLF6G27L-40P_LS-40P_LS-40PG
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 14 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved.
14 of 15
NXP Semiconductors
BLF6G27L-40P;BLF6G27LS-40P(G)
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
Ruggedness in class-AB operation . . . . . . . . . 4
Single carrier IS-95 . . . . . . . . . . . . . . . . . . . . . . 4
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2015.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 14 January 2015
Document identifier: BLF6G27L-40P_LS-40P_LS-40PG