Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTE30N20F3 BVDSS ID@VGS=10V, TC=25°C RDSON(TYP) 200V VGS=10V, ID=17A 50A 28.6mΩ Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Symbol Outline TO-263 MTE30N20F3 G：Gate S：Source G D：Drain D S Ordering Information Device MTE30N20F3-0-T7-S Package Shipping TO-263 800 pcs / Tape & Reel (Pb-free lead plating and RoHS compliant package) Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T7 : 800 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTE30N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=16A, VDD=50V Repetitive Avalanche Energy@ L=0.1mH Power Dissipation @TC=25℃ Power Dissipation @TC=100℃ Power Dissipation @TA=25℃ Power Dissipation @TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS 200 ±20 50 35 4.8 3.8 200 16 256 25 250 125 2 1.3 -55~+175 ID (Note 2) (Note 2) (Note 3) (Note 3) (Note 2) (Note 3) (Note 1) (Note 1) (Note 2) (Note 2) IDSM IDM IAS EAS EAR PD PDSM Tj, Tstg Unit V A mJ W °C *100% UIS tested at condition of L=2mH, IAS=8A, VDD=50V. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol Rth,j-c Rth,j-a Value 0.6 62 Unit °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. 4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum. 5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient. MTE30N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 3/9 Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS RDS(ON) *1 GFS *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. Unit Test Conditions 200 2 - 0.18 28.6 24.5 4 ±100 1 25 36 - V V/ °C V nA mΩ S VGS=0V, ID=250μA Reference to ID=250μA VDS =VGS, ID=250μA VGS=±20V, VDS=0V VDS =200V, VGS =0V VDS =160V, VGS =0V, TJ=125°C VGS =10V, ID=17A VDS =15V, ID=10A - 71.1 12.4 31.2 28.4 60 74 100 3197 335 116 1.8 - nC VDS=160V, ID=39A, VGS=10V ns VDS=100V, ID=37A, VGS=10V, RG=5.6Ω pF VGS=0V, VDS=25V, f=1MHz Ω f=1MHz - 0.8 78 300 50 200 1.2 - μA A V ns nC IF=25A, VGS=0V IF=20A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTE30N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 100 ID, Drain Current(A) 80 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V 6V 60 5.5V 40 5V 20 1.2 1.0 0.8 VGS=4.5V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) ID=250μA, VGS=0V 0.6 -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 100 VGS=4.5V VGS=7V VGS=10V 10 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 0.1 1 10 ID, Drain Current(A) 0 100 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 2.8 R DS(ON) , Normalized Static DrainSource On-State Resistance 200 R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 180 ID=17A 160 140 120 100 80 60 40 20 2.4 VGS=10V, ID=17A 2.0 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 28.6mΩ typ. 0.0 0 0 MTE30N20F3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 75 100 125 150 175 200 Gate Charge Characteristics 100 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 25 50 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 8 VDS=40V 6 VDS=160V 4 2 ID=39A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 50 60 Total Gate Charge---Qg(nC) 70 80 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 60 RDS(ON) Limit 100 10 μs 100μs 10 1m 10ms TC=25°C, Tj=175°C, VGS=10V,RθJC=0.6°C/W, single pulse 1 DC ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 0 50 40 30 20 10 VGS=10V, RθJC=0.6°C/W 0 0.1 0.1 MTE30N20F3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 5000 100 4500 VDS=10V Peak Transient Power (W) 90 ID, Drain Current (A) 80 70 60 50 40 30 3500 3000 2500 2000 1500 20 1000 10 500 0 0.0001 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 TJ(MAX) =175°C TC=25°C RθJC=0.6°C/W 4000 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJC (t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=0.6 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTE30N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE30N20F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE30N20F3 CYStek Product Specification Spec. No. : C138F3 Issued Date : 2015.08.31 Revised Date : Page No. : 9/9 CYStech Electronics Corp. TO-263 Dimension Marking : Device Name Date Code E30 N20 □□□□ Style : Pin 1.Gate 2.Drain 3.Source 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical Millimeters Min. Max. 4.470 4.670 0.000 0.150 1.170 1.370 0.710 0.910 1.170 1.370 0.310 0.530 1.170 1.370 10.010 10.310 DIM A A1 B b b1 c c1 D Inches Min. Max. 0.176 0.184 0.000 0.006 0.046 0.054 0.028 0.036 0.046 0.054 0.012 0.021 0.046 0.054 0.394 0.406 DIM E e e1 L L1 L2 L3 V Millimeters Min. Max. 8.500 8.900 *2.540 4.980 5.180 15.050 15.450 5.080 5.480 2.340 2.740 1.300 1.700 5.600 REF Inches Min. Max. 0.335 0.350 *0.100 0.196 0.204 0.593 0.608 0.200 0.216 0.092 0.108 0.051 0.067 0.220 REF Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE30N20F3 CYStek Product Specification