Diodes DMN2040LSD-13 Dual n-channel enhancement mode mosfet Datasheet

DMN2040LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
NEW PRODUCT
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Mechanical Data
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Dual N-Channel MOSFET
Low On-Resistance
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26mΩ @ VGS = 4.5V
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36mΩ @ VGS = 2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q 101 Standards for High Reliability
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072 grams (approximate)
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SOP-8L
S1
D1
G1
D1
S2
D2
G2
D2
Maximum Ratings
D2
G1
G2
S1
TOP VIEW
Internal Schematic
TOP VIEW
D1
S2
N-Channel MOSFET
N-Channel MOSFET
@TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Symbol
VDSS
VGSS
Steady
State
Units
V
V
IDM
Value
20
±12
7.0
5.6
30
Symbol
PD
RθJA
TJ, TSTG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
TA = 25°C
TA = 70°C
ID
Pulsed Drain Current (Note 3)
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
1.
2.
3.
4.
5.
@TA = 25°C unless otherwise specified
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
⎯
⎯
⎯
⎯
⎯
⎯
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS(th)
0.6
⎯
19
26
1.2
V
26
36
mΩ
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
VDS = 10V, ID = 6.0A
VGS = 0V, IS = 1.7A
RDS (ON)
⎯
gfs
VSD
⎯
0.5
12
⎯
⎯
1.2
ms
V
Ciss
Coss
Crss
⎯
⎯
⎯
562
75
65
⎯
⎯
⎯
pF
pF
pF
Test Condition
VDS = 10V, VGS = 0V
f = 1.0MHz
Device mounted on 2 oz. Copper pads on FR-4 PCB.
No purposefully added lead.
Pulse width ≤10μS, Duty Cycle ≤1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Short duration pulse test used to minimize self-heating effect.
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
1 of 4
www.diodes.com
November 2008
© Diodes Incorporated
DMN2040LSD
20
24
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5V
16
VGS = 4.5V
VGS = 3.0V
16
VGS = 2.5V
12
VGS = 2.0V
12
8
TA = 150°C
T A = 125°C
T A = 85°C
TA = 25°C
TA = -55°C
VGS = 1.5V
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0
5
0.04
0.03
VGS = 2.5V
0.02
VGS = 4.5V
VGS = 10V
0.01
0
6
12
18
24
ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE (V)
3
Fig. 2 Typical Transfer Characteristics
0.05
0
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
8
4
4
0.05
0.04
TA = 150°C
0.03
TA = 125°C
TA = 85°C
0.02
TA = 25°C
TA = -55°C
0.01
0
30
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Temperature
1,000
1.8
f = 1MHz
900
1.6
VGS = 0V
800
C, CAPACITANCE (pF)
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
20
VGS = 4.5V
ID = 5A
1.4
VGS = 10V
ID = 10A
1.2
1.0
700
600
Ciss
500
400
300
200
0.8
Coss
100
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
Crss
0
2 of 4
www.diodes.com
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
20
November 2008
© Diodes Incorporated
1.2
30
1.0
25
IS, SOURCE CURRENT (A)
NEW PRODUCT
VGS(TH), GATE THRESHOLD VOLTAGE (V)
DMN2040LSD
ID = 1mA
0.8
0.6
ID = 250µA
0.4
20
15
TA = 150°C
10
TA = 125°C
TA = 85°C
5
0.2
TA = 25°C
TA = -55°C
0
-50
0
0
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.9
D = 0.1
D = 0.05
R θJA(t) = r(t) * RθJA
RθJA = 120°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t 1/t2
D = Single Pulse
0.001
0.00001
0.0001
t1
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
100
1,000
10,000
Fig. 9 Transient Thermal Response
Ordering Information
(Note 6)
Part Number
DMN2040LSD-13
Notes:
Case
SOP-8L
Packaging
2500/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
( Top View )
8
5
Logo
N2040LD
Part no.
YY WW
1
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
4
Xth week: 01~52
Year : "07" = 2007
"08" = 2008
3 of 4
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November 2008
© Diodes Incorporated
DMN2040LSD
0.254
Package Outline Dimensions
NEW PRODUCT
E1 E
Gauge Plane
Seating Plane
A1
L
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
SOP-8L
Dim
Min
Max
A
1.75
A1
0.08
0.25
A2
1.40
1.50
A3
0.20 Typ
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.80
3.90
e
1.27 Typ
h
0.35
L
0.60
0.80
0°
8°
θ
All Dimensions in mm
D
Suggested Pad Layout
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
4 of 4
www.diodes.com
November 2008
© Diodes Incorporated
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