DMN2040LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 26mΩ @ VGS = 4.5V • 36mΩ @ VGS = 2.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 4) Qualified to AEC-Q 101 Standards for High Reliability Case: SOP-8L Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) • • • • • • SOP-8L S1 D1 G1 D1 S2 D2 G2 D2 Maximum Ratings D2 G1 G2 S1 TOP VIEW Internal Schematic TOP VIEW D1 S2 N-Channel MOSFET N-Channel MOSFET @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Symbol VDSS VGSS Steady State Units V V IDM Value 20 ±12 7.0 5.6 30 Symbol PD RθJA TJ, TSTG Value 2 62.5 -55 to +150 Unit W °C/W °C TA = 25°C TA = 70°C ID Pulsed Drain Current (Note 3) A A Thermal Characteristics Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 1. 2. 3. 4. 5. @TA = 25°C unless otherwise specified Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) 0.6 ⎯ 19 26 1.2 V 26 36 mΩ VDS = VGS, ID = 250μA VGS = 4.5V, ID = 6.0A VGS = 2.5V, ID = 5.2A VDS = 10V, ID = 6.0A VGS = 0V, IS = 1.7A RDS (ON) ⎯ gfs VSD ⎯ 0.5 12 ⎯ ⎯ 1.2 ms V Ciss Coss Crss ⎯ ⎯ ⎯ 562 75 65 ⎯ ⎯ ⎯ pF pF pF Test Condition VDS = 10V, VGS = 0V f = 1.0MHz Device mounted on 2 oz. Copper pads on FR-4 PCB. No purposefully added lead. Pulse width ≤10μS, Duty Cycle ≤1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Short duration pulse test used to minimize self-heating effect. DMN2040LSD Document number: DS31517 Rev. 4 - 2 1 of 4 www.diodes.com November 2008 © Diodes Incorporated DMN2040LSD 20 24 VGS = 10V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V 16 VGS = 4.5V VGS = 3.0V 16 VGS = 2.5V 12 VGS = 2.0V 12 8 TA = 150°C T A = 125°C T A = 85°C TA = 25°C TA = -55°C VGS = 1.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 5 0.04 0.03 VGS = 2.5V 0.02 VGS = 4.5V VGS = 10V 0.01 0 6 12 18 24 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) 3 Fig. 2 Typical Transfer Characteristics 0.05 0 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 8 4 4 0.05 0.04 TA = 150°C 0.03 TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 30 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1,000 1.8 f = 1MHz 900 1.6 VGS = 0V 800 C, CAPACITANCE (pF) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 20 VGS = 4.5V ID = 5A 1.4 VGS = 10V ID = 10A 1.2 1.0 700 600 Ciss 500 400 300 200 0.8 Coss 100 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2040LSD Document number: DS31517 Rev. 4 - 2 Crss 0 2 of 4 www.diodes.com 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Capacitance 20 November 2008 © Diodes Incorporated 1.2 30 1.0 25 IS, SOURCE CURRENT (A) NEW PRODUCT VGS(TH), GATE THRESHOLD VOLTAGE (V) DMN2040LSD ID = 1mA 0.8 0.6 ID = 250µA 0.4 20 15 TA = 150°C 10 TA = 125°C TA = 85°C 5 0.2 TA = 25°C TA = -55°C 0 -50 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 R θJA(t) = r(t) * RθJA RθJA = 120°C/W D = 0.02 0.01 D = 0.01 P(pk) D = 0.005 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t 1/t2 D = Single Pulse 0.001 0.00001 0.0001 t1 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (s) 100 1,000 10,000 Fig. 9 Transient Thermal Response Ordering Information (Note 6) Part Number DMN2040LSD-13 Notes: Case SOP-8L Packaging 2500/Tape & Reel 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information ( Top View ) 8 5 Logo N2040LD Part no. YY WW 1 DMN2040LSD Document number: DS31517 Rev. 4 - 2 4 Xth week: 01~52 Year : "07" = 2007 "08" = 2008 3 of 4 www.diodes.com November 2008 © Diodes Incorporated DMN2040LSD 0.254 Package Outline Dimensions NEW PRODUCT E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e SOP-8L Dim Min Max A 1.75 A1 0.08 0.25 A2 1.40 1.50 A3 0.20 Typ b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.80 3.90 e 1.27 Typ h 0.35 L 0.60 0.80 0° 8° θ All Dimensions in mm D Suggested Pad Layout X C1 C2 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DMN2040LSD Document number: DS31517 Rev. 4 - 2 4 of 4 www.diodes.com November 2008 © Diodes Incorporated