CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTEE2N20FP BVDSS ID RDS(ON)@VGS=10V, ID=2.9A RDS(ON)@VGS=7V, ID=1A 200V 4A 650 mΩ(typ) 590 mΩ(typ) Description The MTEE2N20FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol Outline MTEE2N20FP G：Gate D：Drain S：Source MTEE2N20FP TO-220FP G D S CYStek Product Specification Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 2/ 10 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=10mH, ID=2Amps, VDD=50V (Note 2) Repetitive Avalanche Energy (Note 3) TC=25°C (Note 1) TC=100°C (Note 1) Power Dissipation TA=25°C (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Operating Junction and Storage Temperature Symbol Limits VDS VGS IDM IAR 200 ±30 4* 2.8* 1.2 0.9 9* 2 EAS 20 EAR 2.5 25 12 2 1.3 ID IDSM PD PDSM TL 300 TPKG 260 Tj, Tstg -55~+175 Unit V A mJ W °C *Drain current limited by maximum junction temperature Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max (Note 2) Symbol RθJC RθJA Value 6 62.5 Unit °C/W °C/W Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. MTEE2N20FP CYStek Product Specification Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 3/ 10 CYStech Electronics Corp. Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS ∆BVDSS/∆Tj VGS(th) *GFS IGSS IDSS IDSS *RDS(ON) Min. Typ. Max. Unit Test Conditions 200 2.5 - 0.2 3.5 1 650 590 4.5 ±100 10 100 800 730 V V/°C V S nA VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =40V, ID=1A VGS=±30V VDS =200V, VGS =0V VDS =160V, VGS =0V, Tj=125°C VGS =10V, ID=2.9A VGS =7V, ID=1A 6.5 1.3 3.3 9 16 15 13 232 25 9.1 - 0.77 120 500 2 8 1.2 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - μA mΩ nC VDD=160V, ID=4A,VGS=10V ns VDD=100V, ID=4A, VGS=10V, RG=25Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IS=1A, VGS=0V VGS=0, IF=2A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTEE2N20FP-0-UB-S MTEE2N20FP Package TO-220FP (RoHS compliant) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 4/ 10 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10 BVDSS, Normalized Drain-Source Breakdown Voltage ID, Drain Current (A) 10V,9V,8V,7V,6.5V,6V 8 5.5V 6 4 VGS=5V 2 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 4 8 12 16 VDS, Drain-Source Voltage(V) -75 -50 -25 20 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1.2 VGS=10V VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 10000 1000 VGS=0V Tj=25°C 1 0.8 Tj=150°C 0.6 0.4 0.2 100 0.01 0.1 1 ID, Drain Current(A) 0 10 1 2 3 4 5 6 IDR , Reverse Drain Current(A) 7 8 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 1000 2.8 ID=2.9A R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 900 800 700 600 2.4 VGS=10V, ID=2.9A 2 1.6 1.2 0.8 RDS(ON) @Tj=25°C : 650mΩ 0.4 0 500 0 MTEE2N20FP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 5/ 10 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss 10 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 0.2 1 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 180 10 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 10 1 0.1 VDS=40V Ta=25°C Pulsed 8 6 4 VDS=160V ID=4A 2 0 0.01 0.001 0.01 0.1 ID, Drain Current(A) 0 1 2 4 6 Qg, Total Gate Charge(nC) 8 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 5 10 1ms 1 10ms 100ms DC 0.1 TC=25°C, Tj=175°C VGS=10V, θJC=6°C/W Single Pulse ID, Maximum Drain Current(A) 100μs RDSON Limited ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 4.5 4 3.5 3 2.5 2 1.5 1 VGS=10V, RθJC=6°C/W 0.5 0 0.01 0.1 MTEE2N20FP 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC, Case Temperature(°C) 175 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 6/ 10 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 30 10 PD, Power Dissipation(W) VDS=10V ID, Drain Current(A) 8 6 4 25 20 15 10 2 5 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 25 50 75 100 125 150 TC, Case Temperature(℃) 175 200 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=6°C/W 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTEE2N20FP 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 7/ 10 Test Circuit and Waveforms MTEE2N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 8/ 10 Test Circuit and Waveforms(Cont.) MTEE2N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 9/ 10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEE2N20FP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C881FP Issued Date : 2012.11.20 Revised Date : 2013.05.24 Page No. : 10/ 10 TO-220FP Dimension Marking: Device Name EE2 N20 Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEE2N20FP CYStek Product Specification