Doc No. TT4-EA-12363 Revision. 3 Product Standards Fast Recovery Diode DA22F2100L DA22F2100L Silicon epitaxial planar type Unit: mm 1.6 For high speed switching circuits 0.13 2 Features 2.6 3.5 Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 Marking Symbol: 3Q 0.55 0.8 Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) VRRM VRSM IF IFSM Tj Topr Tstg Mini2-F4-B SC-109D SOD-123 Panasonic JEITA Code Absolute Maximum Ratings Ta = 25 C Parameter Symbol Repetitive peak reverse voltage Non-repetitive peak reverse surge voltage Forward current Non-repetitive peak forward surge current *1 Junction temperature Operating ambient temperature Storage temperature 1. Cathode 2. Anode Rating Unit 200 200 1.0 15 -40 to +150 -40 to +85 -40 to +150 V V A A °C °C °C Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current) Internal Connection 2 1 Page 1 of 4 Established : 2010-02-12 Revised : 2013-05-23 Doc No. TT4-EA-12363 Revision. 3 Product Standards Fast Recovery Diode DA22F2100L Electrical Characteristics Ta = 25 C 3 C Parameter Symbol Forward voltage Reverse current Terminal capacitance Reverse recovery time VF IRRM Ct *1 trr Conditions Min IF = 1.0 A VRRM = 200 V VR = 0 V, f = 1 MHz IF= 0.5 A, IR = 1 A Irr = 0.25 x IR Typ Max Unit 0.98 10 V A pF 35 ns 60 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. *1: trr test circuit 50 Ω 50 Ω trr D.U.T. IF 5.5 Ω 0.25 × IR IR Page 2 of 4 Established : 2010-02-12 Revised : 2013-05-23 Doc No. TT4-EA-12363 Revision. 3 Product Standards Fast Recovery Diode DA22F2100L Technical Data ( reference ) IF - VF IR - VR 1.E-01 1.E-02 1.E-03 Ta = 125 °C Reverse current IR (A) Forward current IF (A) 1.E+00 85 °C 1.E-03 25 °C 1.E-04 -40 °C 1.E-05 1.E-06 0.0 IR value is not exceeding 100 pA at -40 °C 1.E-04 Ta = 125 °C 1.E-05 1.E-06 85 °C 1.E-07 1.E-08 25 °C 1.E-09 1.E-10 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) 0 40 80 120 160 200 Reverse voltage VR (V) Ct - VR Terminal capacitance Ct (pF) 60 Ta = 25 °C f = 1 MHz 50 40 30 20 10 0 0 10 20 30 40 Reverse voltage VR (V) Page 3 of 4 Established : 2010-02-12 Revised : 2013-05-23 Doc No. TT4-EA-12363 Revision. 3 Product Standards Fast Recovery Diode DA22F2100L Mini2-F4-B Unit: mm 1.6±0.1 +0.05 0.13-0.02 (7°) 3.5±0.1 2.6±0.1 2 0 to 0.1 (7°) 0 to 0.3 0.80±0.05 0.55±0.10 0.45±0.10 1 Land Pattern (Reference) (Unit: mm) 0.8 3.1 0.8 1.1 Page 4 of 4 Established : 2010-02-12 Revised : 2013-05-23 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. 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