Diode Semiconductor Korea FR301---FR307 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 3.0 A FAST RECOVERY RECTIFIERS FEATURES Low cost Diffused junction DO - 27 Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC DO-27,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight:0.041 unces,1.15 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. FR 301 FR 302 FR 303 FR 304 FR 305 FR 306 FR 307 UNITS Maximum recurrent peak reverse voltage V RRM 50 100 200 400 600 800 1000 V Maximum RMS voltage V RMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 3.0 A IFSM 200.0 A VF 1.3 V Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 3.0 A Maximum reverse current at rated DC blocking voltage @TA =25 @TA =100 10.0 IR 150 250 Maximum reverse recovery time (Note1) trr Typical junction capacitance (Note2) CJ 32 Typical thermal resistance (Note3) RθJA 22 TJ - 55---- +150 TSTG - 55---- + 150 Operating junction temperature range Storage temperature range A 200.0 500 ns pF ／Ｗ NOTE:1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3. Thermal resistance f rom junction to ambient. www.diode.kr Diode Semiconductor Korea FR301---FR307 FIG.2--PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT AMPERES AVERAGE FORWARD RECTIFIED CURRENT AMPERES FIG.1 -- FORWARD DERATING CURVE 4 3 2 Single Phase Half Wave 60Hz Resistive or Inductive Load 1 0 0 25 50 75 100 125 150 175 200 175 125 100 75 50 25 0 1 AMBIENT TEMPERATURE, INSTANTANEOUS FORWARD CURRENT AMPERES JUNCTION CAPACITANCE,pF 60 40 20 10 TJ=25 f=1MHz 2 1 .2 .4 1.0 2 4 10 20 4 20 8 10 40 60 80 100 FIG.4 --TYPICAL FORWARD CHARACTERISTIC 100 .1 2 NUMBER OF CYCLES AT 60 Hz FIG.3--TYPICAL JUNCTION CAPACITANCE 4 TJ=125 8.3ms Single Half Sine-Wave 150 40 100 REVERSE VOLTAGE,VOLTS 100 10 TJ=25 Pulse Width=300 µS 4 2 1.0 0.4 0.2 0.1 0.06 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG.5 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM trr 10 N.1. 50 N.1. +0.5A D.U.T. ( - ) 0 PULSE GENERATOR (NOTE2) (+) 50VDC (APPROX) (-) 1 N.1. OSCILLOSCOPE (NOTE 1) -0.25A ( + ) -1.0A 1cm NOTES:1.RISETIME=7ns MAX. INPUT IMPEDANCE=1M .22pF SET TIMEBASEFOR50/100 ns /cm 2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O www.diode.kr