ON MBRA130LT3G Surface mount schottky power rectifier Datasheet

MBRA130LT3
Surface Mount Schottky
Power Rectifier
SMA Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guardring for Over−Voltage Protection
Low Forward Voltage Drop
Pb−Free Package is Available
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
Mechanical Characteristics:
•
•
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or
Polarity Band
Available in 12 mm Tape, 5000 Units per 13 inch Reel, Add “T3”
Suffix to Part Number
Device Meets MSL1 Requirements
ESD Ratings:
Machine Model, C (>400 V)
Human Body Model, 3B (>8000 V)
SMA
CASE 403D
PLASTIC
MARKING DIAGRAM
B1L3
ALYW
B1L3
A
L
Y
W
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
30
V
Average Rectified Forward Current
(At Rated VR, TC = 105°C)
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz,
TC = 105°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
25
Storage Temperature
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
ORDERING INFORMATION
Device
MBRA130LT3
MBRA130LT3G
Package
Shipping†
SMA
5000/Tape & Reel
SMA
(Pb−Free)
5000/Tape & Reel
A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Voltage Rate of Change, (Rated VR, TJ = 25°C)
dv/dt
10,000
V/s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
 Semiconductor Components Industries, LLC, 2005
February, 2005 − Rev. 7
1
Publication Order Number:
MBRA130LT3/D
MBRA130LT3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RJL
RJA
35
86
°C/W
Thermal Resistance — Junction−to−Lead (Note 1)
Thermal Resistance — Junction−to−Ambient (Note 1)
ELECTRICAL CHARACTERISTICS
VF
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 1.0 A)
(IF = 2.0 A)
see Figure 2
IR
Maximum Instantaneous Reverse Current
(VR = 30 V)
(VR = 15 V)
see Figure 4
TJ = 25°C
TJ = 100°C
0.41
0.47
0.35
0.43
TJ = 25°C
TJ = 100°C
1.0
0.4
25
12
Volts
mA
I F, INSTANTANEOUS FORWARD CURRENT (AMPS)
i F , INSTANTANEOUS FORWARD CURRENT (AMPS)
1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
2. Pulse Test: Pulse Width ≤ 250 s, Duty Cycle ≤ 2.0%.
10
TJ = 125°C
1.0
TJ = 85°C
TJ = 25°C
TJ = −40°C
0.1
0
0.2
0.4
0.6
0.8
1.0
TJ = 85°C
TJ = 25°C
0.1
0
0.2
0.4
0.6
0.8
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0
100E−3
I R , MAXIMUM REVERSE CURRENT (AMPS)
I R , REVERSE CURRENT (AMPS)
TJ = 125°C
1.0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
100E−3
10E−3
TJ = 125°C
10E−3
1.0E−3
1.0E−3
TJ = 85°C
100E−6
TJ = 85°C
TJ = 25°C
100E−6
10E−6
1.0E−6
10
TJ = 25°C
0
10
20
30
10E−6
1.0E−6
0
10
20
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
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2
30
MBRA130LT3
PFO , AVERAGE POWER DISSIPATION (WATTS)
FREQ = 20 kHz
1.8
dc
1.6
1.4
SQUARE WAVE
1.2
1.0
Ipk/Io = 0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
0
20
40
60
80
100
120
140
0.6
dc
SQUARE WAVE
0.5
Ipk/Io = 0.4
Ipk/Io = 5
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
1.6
T, TIME (s)
1.0E+0
100E−3
10E−3
1.0E−3
100E−6
10E−6
1.0E−3
100E−6
10E−3
1.0E+0
100E−3
10E+0
T, TIME (s)
Figure 7. Thermal Response
1000
C, CAPACITANCE (pF)
R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
IO , AVERAGE FORWARD CURRENT (AMPS)
2.0
TJ = 25°C
100
10
1.0
0
5.0
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitance
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3
35
40
100E+0
1.0E+3
MBRA130LT3
PACKAGE DIMENSIONS
SMA
CASE 403D−02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD
IS 403D−02.
S
A
D
DIM
A
B
C
D
H
J
K
S
B
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
INCHES
MIN
MAX
0.160
0.180
0.090
0.115
0.075
0.095
0.050
0.064
0.002
0.006
0.006
0.016
0.030
0.060
0.190
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
2.29
2.92
1.91
2.41
1.27
1.63
0.05
0.15
0.15
0.41
0.76
1.52
4.83
5.59
C
J
K
H
SOLDERING FOOTPRINT*
4.0
0.157
2.0
0.0787
2.0
0.0787
SCALE 8:1
mm inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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MBRA130LT3/D
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