MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry ∗ Diffused Emitter Ballasting Resistors ∗ Gold Metalization System ∗ Internal Input and Output Impedance Matching ∗ Hermetic Metal/Ceramic Package ABSOLUTE MAXIMUM RATINGS AT 25°C Parameter Symbol Rating Units Collector-Emitter Voltage VCES 65 V Emitter-Base Voltage VEBO 3.0 V Collector Current (Peak) IC 32.5 A PTOT 1340 W Junction Temperature TJ 200 °C Storage Temperature TSTG -65 to +200 °C Total Power Dissipation @ +25°C ELECTRICAL CHARACTERISTICS AT 25°C Parameter Symbol Min Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Max Units Test Conditions BVCES 65 - V IC=50mA ICES - 15 mA VCE=50V Thermal Resistance RTH - 0.13 °C/W VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Output Power POUT 350 - W VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Collector Efficiency ηC 45 - % VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz Input Return Loss RL 9 - dB Load Mismatch Tolerance VSWR-T - 10:1 - VCC=50 V, PIN=40 W, F=960 MHz Load Mismatch Stability VSWR-S - 1.5:1 - VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz All spurious signals shall be < -60dBc below carrier, except F = Fo ± ½ Fo shall be < -40dBc VCC=50 V, PIN=40 W, F=960, 1090, 1215 MHz BROADBAND TEST FIXTURE IMPEDANCE F (MHz) Z IF (Ω) Z OF (Ω) 960 1.8 - j1.7 1.7 - j1.7 1030 1.7 - j1.4 1.8 - j1.2 1090 1.6 - j1.2 1.9 - j0.8 1150 1.4 - j1.0 1.9 - j0.6 1215 1.2 - j0.8 2.0 - j0.2 M/A-COM RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. 1 MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10μs Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 TYPICAL RF PERFORMANCE - OUTPUT POWER VS. INPUT POWER 550 Pout (watts) 450 350 250 ` 150 20 25 30 35 40 45 50 Pin (watts) 960 MHz 1090 MHz 1215 MHz TYPICAL RF PERFORMANCE - COLLECTOR EFFICIENCY VS. INPUT POWER Collector Efficiency (%) 65 55 45 35 25 20 25 30 35 40 45 50 Pin (watts) 960 MHz 1090 MHz 1215 MHz M/A-COM RF POWER INNOVATIONS • 1742 CRENSHAW BLVD • TORRANCE, CA 90501 (310) 320-6160 • FAX (310) 618-9191 M/A-COM RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. 2