Complementary MOSFET ELM34604AA-N ■General Description ■Features ELM34604AA-N uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • N-channel P-channel Vds=40V Id=7A Rds(on) < 28mΩ(Vgs=10V) Rds(on) < 42mΩ(Vgs=4.5V) Vds=-40V Id=-5A Rds(on) < 65mΩ(Vgs=-10V) Rds(on) < 105mΩ(Vgs=-4.5V) ■Maximum Absolute Ratings Parameter Symbol N-ch (Max.) P-ch (Max.) Vds 40 -40 V Vgs ±20 7 ±20 -6 V 6 20 -5 -20 2.0 1.3 -55 to 150 2.0 1.3 -55 to 150 Drain-source voltage Gate-source voltage Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current Idm Ta=25°C Ta=70°C Power dissipation Junction and storage temperature range Pd Tj,Tstg Unit Note A A 3 W °C ■Thermal Characteristics Parameter Maximum junction-to-ambient Symbol Rθja Device N-ch Maximum junction-to-ambient Rθja P-ch ■Pin configuration SOP-8(TOP VIEW) 1 8 2 7 3 6 4 5 Typ. Max. 62.5 Unit °C/W 62.5 °C/W Note ■Circuit Pin No. 1 2 Pin name SOURCE1 GATE1 3 4 5 SOURCE2 GATE2 DRAIN2 6 7 8 DRAIN2 DRAIN1 DRAIN1 7-1 • N-ch • P-ch D1 G1 D2 G2 S1 S2 Complementary MOSFET ELM34604AA-N ■Electrical Characteristics (N-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Vds=30V, Vgs=0V, Tj=55°C Gate-body leakage current Gate threshold voltage On state drain current Igss Vds=0V, Vgs=±20V Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Static drain-source on-resistance Rds(on) Min. Typ. Ta=25°C Max. Unit Note 40 1.0 20 V 1.5 1 10 μA ±100 nA 2.5 V A 1 mΩ 1 S 1 1 V 1 1.3 2.6 A A 3 Vgs=10V, Id=7A 21 28 30 19 42 Forward transconductance Gfs Vgs=4.5V, Id=6A Vds=10V, Id=7A Diode forward voltage Vsd If=Is, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=10V, f=1MHz 790 175 pF pF Crss 65 pF Qg 16.0 nC 2 2 2 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Qgs Vgs=10V, Vds=20V, Id=7A Qgd td(on) 2.5 2.1 2.2 4.4 nC nC ns Turn-on rise time Turn-off delay time tr Vgs=10V, Vds=20V, Id≈1A td(off) Rgen=6Ω 7.5 11.8 15.0 21.3 ns ns 2 2 3.7 7.4 ns 2 Turn-off fall time tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4. Duty cycle ≤ 1%. 7- 2 P2804NVG N- & P-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free Complementary MOSFET ELM34604AA-N ■Typical Electrical and Thermal Characteristics (N-ch) Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V T A = 125° C Is - Reverse Drain Current(A) 10 25° C 1 -55° C 0.1 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 7- 3 4 AUG-19-2004 NIKO-SEM MOSFET Mode N-Complementary & P-Channel Enhancement ELM34604AA-N Field Effect Transistor 7- 4 P2804NVG SOP-8 Lead-Free Complementary MOSFET ELM34604AA-N ■Electrical Characteristics (P-ch) Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Conditions Min. BVdss Id=-250μA, Vgs=0V -40 Zero gate voltage drain current Idss Vds=-32V, Vgs=0V Vds=-30V, Vgs=0V, Tj=55°C Gate-body leakage current Igss Vds=0V, Vgs=±20V Gate threshold voltage On state drain current Vgs(th) Vds=Vgs, Id=-250μA Id(on) Vgs=-10V, Vds=-5V Static drain-source on-resistance Rds(on) -1.0 -20 Typ. Ta=25°C Max. Unit Note V -1.5 -1 -10 μA ±100 nA -2.5 V A 1 mΩ 1 S 1 -1 V 1 -1.3 -2.6 A A 3 Vgs=-10V, Id=-5A 50 65 80 11 105 Forward transconductance Gfs Vgs=-4.5V, Id=-4A Vds=-10V, Id=-5A Diode forward voltage Vsd If=Is, Vgs=0V Max.body-diode continuous current Pulsed current Is Ism DYNAMIC PARAMETERS Input capacitance Output capacitance Ciss Coss Vgs=0V, Vds=-10V, f=1MHz 690 310 pF pF Crss 75 pF 14.0 nC 2 2.2 1.9 6.7 13.4 nC nC ns 2 2 2 9.7 19.8 19.4 35.6 ns ns 2 2 12.3 22.2 ns 2 Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Qg Vgs=-10V, Vds=-20V Id=-5A Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd td(on) Turn-on rise time Turn-off delay time tr Vgs=-10V, Vds=-20V td(off) Id≈-1A, Rl=1Ω, Rgen=6Ω Turn-off fall time tf NOTE : 1. Pulse test : Pulsed width≤300μsec and Duty cycle≤2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 7- 5 N- & P-Channel Enhancement Mode Complementary MOSFET Field Effect Transistor P2804NVG ELM34604AA-N SOP-8 Lead-Free ■Typical Electrical and Thermal Characteristics (P-ch) -Is - Reverse Drain Current(A) 100 V GS = 0V 10 1 0.1 25° C -55° C 0.01 0.001 0 7- 6 T A = 125° C 0.8 1.0 1.2 0.2 0.6 0.4 -VSD - Body Diode Forward Voltage(V) 1.4 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor Complementary MOSFET ELM34604AA-N 7- 7 P2804NVG SOP-8 Lead-Free