Transistors SMD Type NPN Transistors CZT3055 (KZT3055) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 7.0±0.3 ● High Current ● Low Voltage 3.50±0.2 4 ● Surface Mounted Power Amplifier Application 1 2 3 ● Complement to CZT2955 0.250 2.30 (typ) 1.80 (max) Gauge Plane 0.02 ~ 0.1 1.Base 2.Collector 0.70±0.1 4.60 (typ) 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 100 Collector - Emitter Voltage VCEO 60 Emitter - Base Voltage Unit V VEBO 7 Collector Current - Continuous IC 6 A Collector Power Dissipation PC 1 W RθJA 125 ℃/W TJ 150 Tstg -55 to 150 Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage VCBO Collector- emitter breakdown voltage VCEO Emitter - base breakdown voltage Collector-base cut-off current Collector cut-off current Emitter cut-off current Test Conditions Ic= 1mA， IE= 0 Min Typ Max Ic= 30 mA， IB= 0 60 Ic= 30 mA， IB= 0 , RBE=100Ω 70 VEBO IE= 1 mA， IC= 0 7 ICBO VCB= 100 V , IB= 0 100 ICEO VCE= 30 V , IE= 0 700 ICEV VCE= 100 V , VEB= 1.5V IEBO VEB= 7V , IC=0 V mA 5 mA VCE(sat) IC=4 A, IB=400mA 1.1 Base - emitter saturation voltage VBE(sat) IC=4 A, IB=400mA 1.2 DC current gain Transition frequency VBE VCE= 4V, IC= 4A hFE(1) VCE= 4V, IC= 4A 20 hFE(2) VCE= 4V, IC= 6A 5 fT VCE= 10V, IC= 500mA,f=1MHz uA 1 Collector-emitter saturation voltage Base-emitter voltage Unit 100 V 1.5 2.5 70 MHz www.kexin.com.cn 1