BAS316 S-BAS316 High-speed diode P b Lead(Pb)-Free DESCRIPTION The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323(SC76) SMD SOD– 323 plastic package. FEATURES · Ultra small plastic SMD package · High switching speed: max. 4 ns · Continuous reverse voltage: max. 75 V · Repetitive peak reverse voltage: max. 100 V · Repetitive peak forward current: max. 500 mA. · We declare that the material of product compliance with RoHS requirements. 1 CATHODE 2 ANODE · S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. APPLICATIONS · High-speed switching in e.g. surface mounted circuits. ORDERING INFORMATION Device Marking BAS316 Shipping Z9 3000 Tape & Reel Z9 10000 Tape & Reel S-BAS316 BAS316 S-BAS316 ELECTRICAL CHARACTERISTICS T j =25°C unless otherwise specified. SYMBOL PARAMETER CONDITIONS VF forward voltage see Fig.2 I F = 1 mA I F = 10 mA I F =50 mA I F = 150 mA IR reverse current see Fig.4 V R = 25 V V R =75 V V R = 25 V; T j = 150 °C V R = 75 V; T j = 150 °C; Cd t rr diode capacitance reverse recovery time V fr forward recovery voltage WEITRON http://www.weitron.com.tw f = 1 MHz; V R = 0; see Fig.5 when switched from I F =10mA to I R = 10mA; R L = 100Ω ; measured at I R = 1 mA; see Fig.6 when switched from IF = 10 mA; tr = 20 ns; see Fig.7 1/3 MAX. UNIT 715 855 mV mV 1 1.25 V V 30 1 nA µA 30 50 µA µA 2 4 pF ns 1.75 V 03-Jul-2015 BAS316 S-BAS316 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER V RRM VR V R(RMS) repetitive peak reverse voltage continuous reverse voltage IF I FRM continuous forward current repetitive peak forward current I FSM non-repetitive peak forward current T stg Tj UNIT – 100 75 V V – 53 V – – 250 500 mA mA – 5 A t =1 ms t =1 s – – 1 0.5 A A – – -55 – 200 625 +150 150 mW C/W °C °C 300 100 ( ) MAX. square wave; T j =25°C prior to surge; see Fig.3 t =1µs total power dissipation thermal resistance junction to ambient air storage temperature junction temperature JA MIN. – RMS reverse voltage P tot R CONDITIONS 80 200 I F (mA) 60 40 100 20 0 0 25 50 75 100 TEMPERATURE (°C) 125 (1) T j = 150 °C; typical values. (2)T j =25°C; typical values. (3) T j =25°C; maximum values. 150 0 0 Fig.1 Steady State Power Derating 1 2 V F( V ) Fig.2 Forward current as a function of forward voltage. 10 2 I FSM (A) 10 1 10 Based on square wave currents; T j =25°C prior to surge. -1 1 10 102 103 104 t P ( µs ) Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. WEITRON http://www.weitron.com.tw 2/3 03-Jul-2015 BAS316 S-BAS316 2.0 10 5 10 4 C d (pF) I R (nA) 1.6 10 3 0.8 10 2 f = 1 MHz ; T j =25°C; 10 0 100 0 200 T J ( °C ) Fig.4 Reverse current as a function of junction temperature. 0 4 8 12 16 V R( V ) Fig.5 Diode capacitance as a function of reverse voltage; typical values. (1) I R = 1 mA. Input signal: reverse pulse rise time t r = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ= 0.05; Oscilloscope: rise time t r = 0.35 ns. Fig.6 Reverse recovery voltage test circuit and waveforms. Input signal: forward pulse rise time t r= 20 ns; forward current pulse duration tp ≥ 100 ns; duty factorδ≤ 0.005. Fig.7 Forward recovery voltage test circuit and waveforms. WEITRON http://www.weitron.com.tw 3/3 03-Jul-2015