Central CMSD4448 TM Semiconductor Corp. SUPER-MINI HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD4448 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded supermini surface mount package, designed for high speed switching applications. SUPER mini TM SOT-323 CASE MAXIMUM RATINGS: (TA=25oC) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current Forward Surge Current, tp=1 µsec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFRM IFSM IFSM PD TJ,Tstg ΘJA 75 100 250 250 4000 1000 250 UNITS V V mA mA mA mA mW -65 to +150 500 oC oC/W ELECTRICAL CHARACTERISTICS: (TA=25oC unless otherwise noted) SYMBOL VBR VBR IR VF VF CT trr TEST CONDITIONS MIN IR=5.0µA 75 IR=100µA 100 VR=20V IF=5.0mA 0.62 IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100Ω, Rec. to 1.0mA 236 MAX 25 0.72 1.0 4.0 4.0 UNITS V V nA V V pF ns All dimensions in inches (mm). A NO CONNECTION C R2 R1 237