ETL GL9401A Npn silicon planar medium power high gain transistor Datasheet

CORPORATION
ISSUED DATE :2006/11/20
REVISED DATE :
GL9401A
NPN SI L I CO N PL AN AR MEDI UM PO W ER HI G H G AI N T RANSI ST O R
Description
The GL9401A is designed for general purpose switching and amplifier applications.
Features
5 Amps continuous current, up to 20Amps pulse current
Low saturation voltages
High Gain
Package Dimensions
SOT-223
REF.
A
C
D
E
I
H
Millimeter
Min.
Max.
6.70
7.30
2.90
3.10
0.02
0.10
0°
10°
0.60
0.80
0.25
0.35
REF.
B
J
1
2
3
4
5
Millimeter
Min.
Max.
13°TYP.
2.30 REF.
6.30
6.70
6.30
6.70
3.30
3.70
3.30
3.70
1.40
1.80
Absolute Maximum Ratings at Ta = 25
Parameter
Junction Temperature
Storage Temperature
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Total Power Dissipation
Symbol
Ratings
Unit
Tj
Tstg
VCBO
VCEO
VEBO
IC
ICM
PD
+150
-55~+150
80
30
5
5
20
2.5
V
V
V
A
A
W
*The power which can be dissipated assuming the device is mounted in typical manner on a PCB with copper equal to 2 inches x 2 inches.
Electrical Characteristics (Ta = 25
Symbol
BVCBO
*BVCES
BVCEO
BVCEV
BVEBO
ICBO
ICES
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
GL9401A
, unless otherwise stated)
Min.
Typ.
Max.
Unit
80
80
30
80
5
280
300
300
180
-
10
10
10
60
100
250
330
1.05
1.0
1200
-
V
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
Test Conditions
IC=100uA , IE=0
IC=100uA
IC=10mA, IB=0
IC=10uA, VEB=1V
IE=100uA ,IC=0
VCB=35V, IE=0
VCES=35V
VEB=4V, IC=0
IC=500mA, IB=10mA
IC=1A, IB=10mA
IC=3A, IB=30mA
IC=5A, IB=50mA
IC=5A, IB=50mA
VCE=2V, IC=5A
VCE=2V, IC=10mA
VCE=2V, IC=0.5A
VCE=2V, IC=1A
VCE=2V, IC=5A
Page: 1/2
CORPORATION
*hFE5
fT
Cob
ton
toff
40
-
180
45
125
380
*Measured under pulse condition. Pulse width
Characteristics Curve
60
-
ISSUED DATE :2006/11/20
REVISED DATE :
MHz
pF
VCE=2V, IC=20A
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1MHz
ns
VCC=10V, IC=4A, IB1=IB2=40mA
300 s, Duty Cycle
2%
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
GL9401A
Page: 2/2
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