Z ibo Seno Electronic Engineering Co., Ltd. HFM101 – HFM108 1.0A GLASS PASSIVATED ULTRAFAST RECOVERY DIODE Mechanical Data ! ! ! ! ! ! 0.10-0.30 1.4± 0.15 1.9± 0.1 ! Glass passivated device ! Ideally Suited for Automatic Assembly SOD - 123FL ! Low Forward Voltage Drop, High Efficiency ! Surge Overload Rating to 2 5 A Peak Cathode Band Top View ! Low Power Loss ! Ultra-Fast Recovery Time ! Plastic Case Material has UL Flammability ! Classification Rating 94V-O 2.8 ± 0.1 1.0±0.2 Features 0.6±0.25 Case: SOD-123FL, Molded Plastic Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 Polarity: Cathode Band or Cathode Notch Marking: Type Number Weight: 0.01 grams (approx.) Lead Free: For RoHS / Lead Free Version 3.7±0.2 Dimensions in millimeters Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Device marking code Symbol HFM 101 HFM 102 HFM 103 HFM 104 HFM 105 HFM 106 HFM 107 HFM 108 UNITS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 50 100 200 300 400 600 800 1000 V RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 100°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) 1.0 A IFSM 25 A @IF = 1.0A VFM @TA = 25°C @TA = 100°C IRM Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage IO Reverse Recovery Time (Note 2) t rr Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 3) Operating and Storage Temperature Range 1.7 1.3 1.0 V 10 500 µA 75 50 nS 4 30 RJL Tj, TSTG pF °C/W -65 to +150 °C Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. HFM101 – HFM108 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. HFM101 – HFM108 1.0 10 IF, INSTANTANEOUS FWD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) 0.8 0.6 0.4 0.2 Single phase half-wave 60 Hz resistive or inductive load 0 25 50 75 100 125 150 175 1.0 0.1 Tj = 25°C Pulse width = 300 µs 0.01 200 30 1.2 1.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 100 Pulse Width 8.3ms Single Half-Sine-Wave (JEDEC Method) Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Derating Curve 20 10 Tj = 25°C f = 1MHz 10 1 0 1 10 NUMBER OF CYCLES AT 60 Hz Fig. 3 Peak Forward Surge Current 100 1 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr 50Ω NI (Non-inductive) (-) 10Ω NI Device Under Test (+) +0.5A (-) 0A Pulse Generator (Note 2) 50V DC Approx 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit HFM101 – HFM108 2 of 2 www.senocn.com Alldatasheet