Diode Semiconductor Korea EGP20A(Z) --- EGP20K(Z) VOLTAGE RANGE: 50 --- 800 V CURRENT: 2.0 A HIGH EFFICIENCY RECTIFIERS FEATURES Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0 DO - 15 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-750,Method 2026 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EGP EGP EGP EGP EGP EGP EGP EGP 20A 20B 20C 20D 20F 20G 20J 20K UNITS Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forw ard rectified current 9.5mm lead length, @TA =75 VRRM VRMS VDC 35 100 70 150 105 200 140 300 210 400 280 600 420 800 560 V V 50 100 150 200 300 400 600 800 V 50 IF(AV) 2.0 A IFSM 75 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ =125 Maximum instantaneous forw ard voltage @ 2.0 A Maximum reverse current @TA =25 at rated DC blocking voltage @TA =125 Maximum reverse recovery (Note1) Typical junction capacitance (Note2) Typical thermal resistance Typical thermal resistance (Note3) (Note 4) Operating junction temperature range Storage temperature range VF 0.95 1.25 5.0 100 IR trr CJ RθJA RθJL TJ TSTG 1.7 50 Ａ 75 45 70 40 15 V ns pF ／Ｗ - 55 ---- + 150 - 55 ---- + 150 NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance f rom junction to ambient. 4.Thermal resistance from junction to lead. www.diode.kr Diode Semiconductor Korea EGP20A(Z)---EGP20K(Z) FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC trr 10 N1. 50 N1. +0.5A D.U.T. (-) PULSE GENERATOR (NOTE2) (+) 25VDC (approx) (-) OSCILLOSCOPE (NOTE1) 1 NONINDUCTIVE 0 -0.25A (+) -1.0A 1cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . SET TIME BASE FOR 20/30 ns/cm FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES EGP20A-EGP20D 10 EGP20J-EGP20K 1 EGP20F-EGP20G 0.1 Pulse Width=300µs 1% DUTY CYCLE 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 100 80 60 40 EGP20A-EGP20D EGP20F&EGP20K 0 0.1 1 4 10 REVERSE VOLTAGE,VOLTS 100 1000 PEAK FORWARD SURGE CURRENT AMPERES TJ=25 20 Single Phase Half Wave 60Hz Resistive or Inductive Load 1.5 EGP20A-EGP20k 1 0.5 0.375"(9.5mm)LEAD LENGTH 0 0 25 50 75 100 125 150 175 FIG.5 -- PEAK FORWARD SURGE CURRENT 140 120 2.0 AMBIENT TEMPERATURE, FIG.4 -- TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE,pF z 50 AMPERES INSTANTANEOUS FORWARD CURRENT FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 105 TJ =125 8.3ms Single Half Sine-Wave 90 75 60 EGP20A-EGP20K 45 30 15 0 1 10 100 NUMBER OF CYCLES AT 60Hz www.diode.kr