Vishay BA979S Rf pin diode Datasheet

BA979/BA979S
VISHAY
Vishay Semiconductors
RF PIN Diodes
Features
• Wide frequency range 10 MHz to 1 GHz
Applications
Current controlled HF resistance in adjustable
attenuators
9612009
Mechanical Data
Case:QuadroMELF Glass Case (SOD-80)
Weight: approx. 34 mg
Cathode Band Color: Black
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
Type differentiation
Ordering code
Remarks
BA979
VR = 30 V, Zr > 5 kΩ
BA979-GS18 or BA979-GS08
Tape and Reel
BA979S
VR = 30 V, Zr > 9 kΩ
BA979S-GS18 or BA979S-GS08
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Symbol
Value
Unit
Reverse voltage
Parameter
Test condition
VR
30
V
Forward current
IF
50
mA
Symbol
Value
Unit
RthJA
500
K/W
Tj
125
°C
Tstg
- 55 to + 125
°C
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Junction ambient
Junction temperature
Storage temperature range
Document Number 85533
Rev. 1.4, 26-Apr-04
Test condition
on PC board
50 mm x 50 mm x 1.6 mm
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BA979/BA979S
VISHAY
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 20 mA
VF
1
V
Reverse current
VR = 30 V
IR
50
nA
CD
0.5
pF
rf
50
Ω
Diode capacitance
f = 100 MHz, VR = 0
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
Reverse impedance
f = 100 MHz, VR = 0
BA979
zr
5
BA979S
zr
9
kΩ
τ
IF = 10 mA, IR = 10 mA
Minority carrier lifetime
kΩ
µs
4
IF - Forward Current ( mA )
100
10
Tamb = 25°C
1
Scattering Limit
0.1
0.01
0
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage ( V )
95 9735
a - Typical Cross Modulation Distortion ( dB )
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
20
f 1 = 100 MHz unmodulated
-20
-40
-60
-80
95 9733
Fig. 1 Forward Current vs. Forward Voltage
Π - Circuit with 10 dB Attenuation
V 0 = 40 dBmV
0
0
20
40
60
80
f 2 , modulated with 200 kHz, m = 100% (MHz)
Fig. 3 Typ. Cross Modulation Distortion vs. Frequency f2
r f - Differential Forward Resistance
ı
(Ω)
10000
1000
100
10
f > 20 MHz
Tj = 25 ° C
1
0.001
95 9734
0.01
0.1
1
10
I F - Forward Current ( mA )
Fig. 2 Differential Forward Resistance vs. Forward Current
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Document Number 85533
Rev. 1.4, 26-Apr-04
BA979/BA979S
VISHAY
Vishay Semiconductors
Package Dimensions in mm (Inches)
1.5 ± 0.1
(0.06 ± 0.004)
ss
G
la
1.
7
(0
.0
7
)
Cathode indification
Glass
> R 3 (R 0.12)
0.47 max. (0.02)
3.5 ± 0.2 (0.14 ± 0.008)
Mounting Pad Layout
2.50 (0.098) max
ISO Method E
Glass case
Quadro Melf / SOD 80
JEDEC DO 213 AA
5 (0.197) ref
2 (0.079) min
1.25 (0.049) min
96 12071
Document Number 85533
Rev. 1.4, 26-Apr-04
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BA979/BA979S
VISHAY
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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Document Number 85533
Rev. 1.4, 26-Apr-04
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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