ISC IRF532 Isc n-channel mosfet transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
IRF532
·FEATURES
·Low RDS(on)
·VGS Rated at ±20V
·Silicon Gate for Fast Switching Speed
·Rugged
·Low Drive Requirements
·DESCRITION
·Designed especially for high voltage,high speed applications,
such as off-line switching power supplies , UPS,AC and DC
motor controls,relay and solenoid drivers.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
100
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
12
A
IDM
Drain Current-Single Plused
48
A
PD
Total Dissipation @TC=25℃
79
W
Tj
Max. Operating Junction Temperature
-55~175
℃
Storage Temperature
-55~175
℃
MAX
UNIT
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
1.9
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
80
℃/W
isc website:www.iscsemi.cn
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isc Product Specification
INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
IRF532
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
Drain-Source Breakdown Voltage
VGS= 0; ID= 0.25mA
100
VGS(th)
Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on)
Drain-Source On-Resistance
IGSS
V(BR)DSS
PARAMETER
TYP
MAX
UNIT
V
2
4
V
VGS= 10V; ID= 8.3A
0.25
Ω
Gate-Body Leakage Current
VGS= ±20V;VDS= 0
±500
nA
IDSS
Zero Gate Voltage Drain Current
VDS= 100V; VGS=0
250
uA
VSD
Forward On-Voltage
IS= 14A; VGS=0
2.5
V
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=25V,VGS=0V,
F=1.0MHz
600
pF
250
pF
50
pF
·SWITCHING CHARACTERISTICS (TC=25℃)
SYMBOL
Td(on)
Tr
Td(off)
Tf
PARAMETER
Turn-on Delay Time
Rise Time
Turn-off Delay Time
VDD=50V,ID=14A
VGS=10V
RGS=12Ω
RGEN=12Ω
Fall Time
isc website:www.iscsemi.cn
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CONDITIONS
2
MIN
TYP
MAX
UNIT
12
15
ns
35
51
ns
25
35
ns
25
36
ns
isc & iscsemi is registered trademark
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