IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF620 IRF620FI ■ ■ ■ ■ V DSS R DS( on) ID 200 V 200 V < 0.8 Ω < 0.8 Ω 6A 4A TYPICAL RDS(on) = 0.55 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ INDUSTRIAL ACTUATORS ■ DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT 1 3 2 2 1 TO-220 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF620 VD S V DG R V GS Drain-source Voltage (V GS = 0) 200 200 V Gate-source Voltage ± 20 V Drain Current (cont.) at Tc = 25 oC ID o P tot Drain Current (cont.) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor V ISO T stg Tj V Drain- gate Voltage (R GS = 20 kΩ) ID ID M(•) Unit IRF620FI Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 6 4 A 4 2 A 24 24 A 70 30 W 0.56 0.24 W/ o C 2000 V -65 to 150 o C 150 o C (•) Pulse width limited by safe operating area November 1996 1/9 IRF620/FI THERMAL DATA R thj-cas e Rthj- amb R th c-s Tl Thermal Resistance Junction-case TO-220 ISOWATT220 1.79 4.17 Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose o C/W 62.5 0.5 300 o C/W C/W o C Max Value Unit o AVALANCHE CHARACTERISTICS Symbol Parameter IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 6 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 25 V) 20 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 5 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 4 A o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 µA VG S = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 200 Unit V 10 100 µA µA ± 100 nA Max. Unit 3 4 V 0.55 0.8 Ω T c = 125 oC V GS = ± 20 V ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS ID = 250 µA R DS( on) Static Drain-source On Resistance V GS = 10V ID = 3 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max Min. 2 VG S = 10 V Typ. 6 A DYNAMIC Symbol gfs (∗) C iss C oss C rss 2/9 Parameter Test Conditions Forward Transconductance V DS > ID( on) x RD S(on) max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz ID = 3 A VG S = 0 Min. Typ. 1.5 3.5 460 90 20 Max. Unit S 600 120 30 pF pF pF IRF620/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD Symbol Parameter Test Conditions Min. Typ. Max. Unit t d(on) tr t d(off ) tf Turn-on Time Rise Time Turn-off Delay Time Fall Time V DD = 100 V I D = 3 A VGS = 10 V R G = 50 Ω (see test circuit) 30 70 135 45 45 100 190 65 ns ns ns ns Qg Q gs Q gd Total Gate Charge Gate-Source Charge Gate-Drain Charge I D = 6 A V GS = 10 V V DD = Max Rating x 0.8 (see test circuit) 20 6 8 30 nC nC nC Typ. Max. Unit 6 24 A A 1.5 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 6 A Reverse Recovery Time Reverse Recovery Charge I SD = 6 A di/dt = 100 A/µs V DD = 100 V T j = 150 o C t rr Q rr Min. V GS = 0 170 ns 1 µC (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for ISOWATT220 3/9 IRF620/FI Thermal Impedance for TO-220 Thermal Impedance for ISOWATT220 Derating Curve for TO-220 Derating Curve for ISOWATT220 Output Characteristics Transfer Characteristics 4/9 IRF620/FI Transconductance Static Drain-source On Resistance Maximum Drain Current vs Temperature Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Breakdown Voltage vs Temperature 5/9 IRF620/FI Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics Unclamped Inductive Load Test Circuit Unclamped Inductive Waveforms Switching Time Test Circuit Gate Charge Test Circuit 6/9 IRF620/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch MAX. MIN. A 4.40 TYP. 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 D1 TYP. 1.27 MAX. 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 3.5 3.93 0.137 0.154 3.75 3.85 0.147 0.151 D1 C D A E L9 DIA. H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 IRF620/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F F1 L7 F2 H G G1 Ø 1 2 3 L2 8/9 L4 P011G IRF620/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 9/9