Power APE8910 Ultra low on resistance 6a dual load switch with controlled turn on Datasheet

Advanc
A
ced Pow
wer
E
Electron
nics Co
orp.
AP
PE8910
U
ULTRA- LOW ON
O RES
SISTANC
CE, 6-A DUAL L
LOAD SWITCH
S
WITH CON
NTROLL
LED TU
URN-ON
FEATUR
RES
DES
SCRIPTIO
ON
▓
Integrated dual chann
nel load switcch
The APE8910
A
is a small, ultra-low RON dual load
▓
Input Volttage Range: 0.8V to 5.5V
V
switch
h with conttrolled turn on. It con
ntains two
▓
Ultra-low ON-Resista
ance, RON = 20mΩ
2
per
N-cha
annel MOSFETs that can
n operate ove
er an input
channel
voltag
ge range of 0.8V
0
to 5.5V and supportt maximum
▓
6A Maxim
mum Continu
uous Currentt per channell
contin
nuous curren
nt up to 6A e
each. Each lo
oad switch
▓
Low Thre
eshold Contro
ol Input
is co
ontrolled by an on/off input (ON), which is
▓
Adjustablle Rise Time
e
capab
ble of interrfacing dire
ectly with lo
ow-voltage
▓
Quick Ou
utput Discharrge Transisto
or
contro
ol signals.
▓
RoHS Co
ompliant and Halogen Fre
ee Product
Additional feature
es include a 250Ω on-chip load
resisttor for outpu
ut quick disccharge when
n switch is
APPLICATIONS
▓
Telecom Systems
▓
Industriall Systems
▓
Set-Top-B
Box
▓
Consume
er Electronicss
▓
Notebookks / Netbooks
turned
d off, in orde
er to avoid inrush curren
nt, the rise
time is
i adjustable
e by an exte
ernal ceramic
c capacitor
on the
e CTx pin.
The APE8910
A
is available in an ultra-sm
mall, space
.saving 3mmx2mm
m 14-pin DFN
N package with
w thermal
pad.
TYPICA
AL APPLICATION
+5V
O
ON1
VIN1
VBIAS
S
VOUT1
V
VIN1
CIN1
1u
uF
V
VIN2
VIN2
CIN2
1u
uF
COUT1
0. 1uF
APE89
910
O
ON2
C T1
Data and speecifications suubject to changge without nottice
VOUT2
CT1 CT
T2
VOUT1
GND
VOUT2
COUT2
0. 1uF
CT2
1
20150508V55
Advanc
A
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wer
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Electron
nics Co
orp.
AP
PE8910
ORDERING / PA
ACKAGE INFORM
MATION
T View
Top
DFN 3x2-14L
APE8910
0X
Packag
ge Type
GN3B: DFN 3x2-14
4L
VIN1
1
14 VOUT1
VIN1
2
13 VOUT1
ON1
3
VBIAS
V
4
ON2
5
VIN2
6
VIN2
E
Exposed
Pad
7
12 CT1
11 GND
10 CT2
GND
9
VOUT2
8
VOUT2
ABSOLU
UTE MAX
XIMUM RATINGS
R
S (at TA=25°C
C)
VIN1, VIN2
2
-0
0.3V to 6V
VOUT1, VO
OUT2
VIN+0.3V
V
VON1, VON
N2
-0
0.3V to 6V
VBIAS
-0
0.3+6V
IMAX
6A
6
Storage Temperature Range
R
(TST)
Junction Te
emperature (TJ)
Lead Temp
perature (Soldering, 10se
ec.)
.
-6
65 to +150°C
C
150°C
260°C
2
Thermal Re
esistance from Junction to
t Ambient (R
RθJA)
DFN-14L (3
3mmX2mm)
65°C/W
6
ESD Electro
ostatic Disch
harge Capab
bility
Human Bod
dy Model, MILL-STD-883G Meethod 3015.7
2KV
2
Machine Mo
odel, JESD 222
200V
2
Charged De
evice Model,, JESD 22
1KV
RECOM
MMENDED
D OPERA
ATING CONDITIO
C
ONS
VIN1,2
0.8V
0
to 5.5V
VBIAS
2.5V
2
to 5.5V (VBIAS ≧ V
VIN)
VON1,2
0V
0 to 5.5V
VOUT1,2
VIN1,2
V
CIN1,2
≧0.1uF
≧
Junction Te
emperature (TJ)
125°C
Operating Temperature
T
e Range
-4
40°C to 85°C
C
Power Disssipation (PD) @TA=25oC
1.53W
2
Advanc
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wer
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Electron
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orp.
AP
PE8910
ELECTR
RICAL SP
PECIFICA
ATIONS
(VIN1, 2=0.8 to 5.5V, VB
BIAS=5V, TA =25°C, unle
ess otherwise
e specified)
ARAMETER
PA
YM
SY
Quiescent Current
C
IBIAS
Shutdown Current
C
ISD
S
TEST CON
NDITION
VIN2=VON1=
=VON2=5V
VIN1=V
IOUT1=
=IOUT2=0A
MIN
TYP
MA
AX
UNIT
80
120
uA
1
uA
28
2
mΩ
35
3
mΩ
28
2
mΩ
35
3
mΩ
28
2
mΩ
35
3
mΩ
28
2
mΩ
35
3
mΩ
28
2
mΩ
35
3
mΩ
28
2
mΩ
35
3
mΩ
350
Ω
1
uA
D,
VON1=VON2=GND
VOUT1=VOUT2=0
VINx=5V, VBIAS=5V
V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=5V, VBIAS=5V
V,
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
VINx=3.3V, VBIAS=
=5V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=3.3V, VBIAS=
=5V,
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
VINx=1.8V, VBIAS=
=5V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=1.8V, VBIAS=
=5V,
.
ON Resistance (each sw
witch)
RON
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
VINx=1.5V, VBIAS=
=5V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=1.5V, VBIAS=
=5V,
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
VINx=1.2V, VBIAS=
=5V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=1.2V, VBIAS=
=5V,
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
VINx=0.8V, VBIAS=
=5V,
IOUTx=
=-200mA, TA=25
= oC
20
VINx=0.8V, VBIAS=
=5V,
IOUTx=
=-200mA, -40
0oC < TA < 85
5oC
Output Pull Down Resisstance
ROPD
VBIAS=
=5V, VONx=0
0V
O
250
ONx Input Leakage
L
Currrent
ION
O
VONx=5
5V or GND
ONx Logic High
H
VIH
VBIAS=
= 2.5V to 5.5V
V
1.2
5.5
5
V
ONx Logic Low
L
VIL
VBIAS=
= 2.5V to 5.5V
V
0
0.4
0
V
3
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wer
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AP
PE8910
SWITCH
HING CHA
ARACTE
ERISTICS
S
PA
ARAMETER
SY
YM
TEST CON
NDITION
MIN
TYP
MA
AX
UNIT
VIN=VON=VBIAS
=5V, TA=2
25oC (unless otherwise noted)
B
Turn on Tim
me
tON
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1870
us
Turn off Tim
me
tOFF
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1
us
VOUT Rise Time
T
tR
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1440
us
VOUT Fall Tim
me
tF
RL=10Ω
Ω, CL=0.1uF, CT=1000pF
2
us
tD
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
230
us
ON Delay Time
T
o
VIN=0.8V, VON=VBIAS=5V
V, TA=25 C (u
unless otherw
wise noted)
Turn on Tim
me
tON
O
RL=10Ω
Ω, CL=0.1uF, CT=1000pF
420
us
Turn off Tim
me
tOFF
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1
us
VOUT Rise Time
T
tR
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
280
us
VOUT Fall Tim
me
tF
RL=10Ω
Ω, CL=0.1uF, CT=1000pF
2
us
tD
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
230
us
ON Delay Time
T
o
VIN=VBIAS=3
3.3V, VON =5V
V, TA=25 C (unless otherrwise noted)
Turn on Tim
me
tON
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1040
us
Turn off Tim
me
tOFF
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
2
us
VOUT Rise Time
T
tR
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
1320
us
VOUT Fall Tim
me
tF
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
2
us
ON Delay Time
T
tD
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
250
us
.
o
VIN=0.8V, VBIAS=3.3V, VON
25 C (unless otherwise noted)
O =5V, TA=2
Turn on Tim
me
tON
O
RL=10Ω
Ω, CL=0.1uF, CT=1000pF
460
us
Turn off Tim
me
tOFF
O
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
2
us
VOUT Rise Time
T
tR
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
300
us
VOUT Fall Tim
me
tF
RL=10Ω
Ω, CL=0.1uF, CT=1000pF
2
us
ON Delay Time
T
tD
Ω, CL=0.1uF, CT=1000pF
RL=10Ω
250
us
4
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wer
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Electron
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orp.
AP
PE8910
PIN DES
SCRIPTIO
ONS
PIN No.
PIN SYMBOL
1, 2
V
VIN1
C
Channel
1 in
nput, bypass this input with a ceramicc capacitor to
o ground.
3
O
ON1
C
Channel
1 en
nable contro
ol input, active
e high. Do no
ot leave floatting.
4
VB
BIAS
5
O
ON2
C
Channel
2 en
nable contro
ol input, active
e high. Do no
ot leave floatting.
6,7
V
VIN2
C
Channel
2 in
nput, bypass this input with a ceramicc capacitor to
o ground.
8,9
VO
OUT2
10
C
CT2
A capacitor to
t ground sett the rise time of VOUT2.
11
G
GND
G
Ground.
12
C
CT1
A capacitor to
t ground sett the rise time of VOUT1.
13,14
VO
OUT1
PIN DESC
CRIPTION
5 bias volta
5V
age.
C
Channel
2 ou
utput.
C
Channel
1 ou
utput.
BLOCK DIAGRA
AM
VIN1
.
VBIAS
VOUT1
Oscillator
Output 1 D
Discharge
Charge
Pump
Control
Logic
VIN2
ON1
VOUT2
ON2
GND
Output 2 D
Discharge
CT
T1
CT2
5
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ced Pow
wer
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Electron
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orp.
AP
PE8910
TYPICA
AL PERFO
ORMANC
CE CHAR
RACTERISTICS
VBIAS=5V, VIN1=VIN2,, ON1=ON2, IOUTX=0A, CTx=1nF,
C
CINXX=1µF, COUTX=0.1µF,
ch1:ONx, ch
h2:VOUT1, ch3:
c
VOUT2
Fig.1
1 Turn-on Response,
R
V
VINx=0.8V
Fig.2 Tu
urn-on Respo
onse, VINx=1.05V
.
Fig.3
3 Turn-on Response,
R
V
VINx=1.8V
Fig.4 Turn-on
T
Resp
ponse, VINx=
=2.5V
Fig.5
5 Turn-on Response,
R
V
VINx=3.3V
Fig.6 Turn-on
T
Resp
ponse, VINx=
=5.0V
6
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wer
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nics Co
orp.
AP
PE8910
TYPICA
AL PERFO
ORMANC
CE CHAR
RACTERISTICS (C
Continued
d)
VBIAS=5V, VIN1=VIN2,, ON1=ON2, IOUTX=0A, CTx=1nF,
C
CINXX=1µF, COUTX=0.1µF,
ch1:ONx, ch
h2:VOUT1, ch3:
c
VOUT2
Fig.7 Turn-off Response,
R
V
VIN=0.8V
Fig.8 Turn-off
T
Resp
ponse, VIN=1
1.05V
.
9 Turn-off Response,
R
V
VIN=1.8V
Fig.9
Fig.10 Turn-off Ressponse, VIN=
=2.5V
Fig.1
11 Turn-off Response, VIN=3.3V
V
=5.0V
Fig.12 Turn-off Ressponse, VIN=
7
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AP
PE8910
290
2000
260
1800
CT=1nF
CT=0.47nF
1600
230
VOUT Rise Time (us)
Turn-on Delay Time (us)
TYPICA
AL PERFO
ORMANC
CE CHAR
RACTERISTICS (C
Continued
d)
CT=1nF
CT=0.47nF
200
CT=0.22nF
170
140
110
CT=0.22nF
1400
1200
1000
800
600
400
80
200
VB
BIAB=5V, Cout=
=0.1uF, Io=0A
50
0.8
1.4
2.0
2.6
3.2
3
3.8
4.4
VBIAB=
=5V, Cout=0.1uF
F, Io=0A
0
5.0
0.8
1.4
2.0
2.6
VIN (V)
Fig.13 tD-ON vs. VIN
N
4.4
5.0
50
CT=10nF
45
45
CT=1nF
40
CT=0nF
35
30
25
.
20
15
VOUT Fall Time (us)
40
Turn-off Time (us)
3.8
Fig.14 tR vs. VIN
50
10
CT
T=10nF
35
CT
T=1nF
30
CT
T=0nF
25
20
15
10
5
5
VB
BIAB=5V, Cout=
=0.1uF, Io=0A
0
0.8
1.4
2.0
2.6
3.2
3
3.8
4.4
VBIAB=
=5V, Cout=0.1uF, Io=0A
0
5.0
0.8
4
1.4
2.0
2.6
VIN (V)
3.2
3.8
4.4
5.0
V (V)
VIN
N
Fig.15 tOFF vs. VIN
Fig.16 tF vs. VIN
1.0
30
0.9
28
0.8
26
0.7
24
VON (V)
RON (mΩ)
3.2
V (V)
VIN
22
20
0.6
0.5
0.4
0.3
18
0.2
VBIAS=VIN
N=VON=5V
16
VBIAS=VIN
N=VON=3.3V
14
-40 -20
0
20
0
40
60
80
100 120
0
TJ (°C)
ature
Fig.17 RONN vs. Tempera
VON-H
0.1
VON-L
0.0
-40 -20
0
0
20
4
40
60
80 100 120
TJ (°C)
Fig.18 ON
O Threshold vs. Temperature
8
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Electron
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AP
PE8910
80
16
70
14
60
12
50
10
IIN (uA)
IBIAS (uA)
TYPICA
AL PERFO
ORMANC
CE CHAR
RACTERISTICS (C
Continued
d)
40
30
8
6
20
4
VBIAS=VIN=VON=5V
10
VBIAS=VIN=VO
ON=5V
2
VBIAS=VIN=VON=3.3V
0
VBIAS=VIN=VO
ON=3.3V
0
0 -20
-40
0
2
20
40
60
80 100 120
0
0
-40 -20
TJ (°C)
0
20
4
40
60
80 100 120
TJ (°C)
Fig.19 Quiescent Currrent (VBIAS) vs. Tempera
ature
Fig
g.20 Quiesscent Currentt (VIN) vs. Te
emperature
.
9
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AP
PE8910
APPLICATION IN
NFORMA
ATION
On/Off Con
ntrol
The load sw
witch is conttrolled by the
e ON pin. Th
he ONx pin is
i active high
h and has a low thresho
old making itt
capable of interfacing with
w low volta
age signals. The ONx pin
n can be use
ed with standard 1.2V, 1.8V, 2.5V orr
3.3V GPIO logic thresho
old. Do not le
eave the ONxx pin float.
The Figure 21 show the
e VOUTx turn
n-on/off wave
eform.
tD: VOUT Tu
urn On Delayy Time
ton: VOUT Turn
T
On Time
tR: VOUT Rise Time
tOFF: VOUT Turn Off Tim
me
tF: VOUT Fa
all Time
Fig.21 ON/OFF Waveform
W
.
Output Rise Time Control
The rise tim
me of each VOUTx
V
is adjustable by an
a external capacitor on the
t CTx pin. The rise tim
me shows on
n
below Table
e 1 are typica
al measured value. Pleasse refer it for determined rise time.
CT (nF)
R
Rise
Time, tR (µs),10%~90
0%, COUT=0.1µF,CIN=1uF
F
V
VIN=0.8V
V
VIN=1.05V
VIN=1.2V
VIN=1.5V
VIN=1.8V
VIN=2.5V
VIN=3.3V
VIN=5V
0
27
31
34
38
40
48
59
75
0.22
72
93
107
131
158
220
284
418
0.47
126
159
178
233
280
400
520
776
1
250
327
378
485
584
780
1045
1657
2.2
509
725
827
1027
1235
1777
2391
3593
4.7
1012
1387
1699
1898
2269
3451
4670
7418
10
2008
2865
3425
4328
5203
7491
10142
15409
<Table 1>
100
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AP
PE8910
APPLICATION IN
NFORMA
ATION (Continued))
Input Capa
acitor
An input cap
pacitor is reccommended to be placed
d between VINx and GND
D to limit the vvoltage drop on the inputt
supply durin
ng high curre
ent applicatio
on.
Output Cap
pacitor
Setting a CIN greater th
han the COUTT is highly re
ecommended
d. Since the internal bod
dy diode is in
n the NMOS
S
switch, this prevents the
e current flow
ws through th
he body diode
e from VOUT
Tx to VINx when the syste
em supply iss
removed.
Layout Con
nsiderations
s
The Figure 22 shows the reference layout for AP
PE8910. Belo
ow lists help start layout.
1. The currrent loop of two load swiitch should be
b separated and symme
etrized to eacch other.
2. Keep th
he high curre
ent paths (VIN
N, VOUT and
d GND; blue circle) wide and short to
o obtain the best
b
effect.
3. The inp
put and outpu
ut capacitorss should be close
c
to the device
d
as po
ossible to min
nimize the pa
arasitic trace
e
inductances.
4. Place th
he thermal vias under the
e exposed pa
ad of the dev
vice (green circle).
c
This h
help for therm
mal diffusion
n
away fro
om the devicce.
.
Fig.22 APE
E8910 Referrence Layoutt
111
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AP
PE8910
MARKIN
NG INFORMATION
DFN 3x2-14
4L
89
910
YWW
WSSS
Part Numb
ber
Date Code (YWWSSS)
Y : Year
WW : Weekk
SSS : Sequ
uence
.
122
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