Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V12500HR3 MRF6V12500HSR3 RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.7 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 50 VDD Operation • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 965 - 1215 MHz, 500 W, 50 V PULSED LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF6V12500HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF6V12500HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +100 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit ZθJC 0.044 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 500 W Pulsed, 128 μsec Pulse Width, 10% Duty Cycle 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2009. All rights reserved. RF Device Data Freescale Semiconductor MRF6V12500HR3 MRF6V12500HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) B (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 10 μAdc 110 — — Vdc Off Characteristics Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 200 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 20 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 90 Vdc, VGS = 0 Vdc) IDSS — — 200 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 1.32 mA) VGS(th) 0.9 1.7 2.4 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 200 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.4 3.2 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.26 Adc) VDS(on) — 0.25 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.2 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 697 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 1391 — pF On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak (50 W Avg.), f = 1030 MHz, Pulsed, 128 μsec Pulse Width, 10% Duty Cycle Power Gain Gps 18.5 19.7 22 dB Drain Efficiency ηD 58 62 — % Input Return Loss IRL — - 18 -9 dB 1. Part internally matched both on input and output. MRF6V12500HR3 MRF6V12500HSR3 2 RF Device Data Freescale Semiconductor R3 R1 VBIAS C5 C9 C8 C7 C12 VSUPPLY + + C14 C15 C13 C3 Z19 Z9 Z10 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 RF OUTPUT C2 Z8 Z21 C1 DUT Z20 R4 R2 C11 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z20 Z10 C6 C10 C16 C4 0.457″ x 0.080″ Microstrip 0.250″ x 0.080″ Microstrip 0.605″ x 0.040″ Microstrip 0.080″ x 0.449″ Microstrip 0.374″ x 0.608″ Microstrip 0.118″ x 1.252″ Microstrip 0.778″ x 1.710″ Microstrip 0.095″ x 1.710″ Microstrip 0.482″ x 0.050″ Microstrip 0.138″ x 1.500″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z21 PCB 0.161” x 1.500″ Microstrip 0.613” x 1.281″ Microstrip 0.248” x 0.865″ Microstrip 0.087” x 0.425″ Microstrip 0.309” x 0.090″ Microstrip 0.193” x 0.516″ Microstrip 0.279” x 0.080″ Microstrip 0.731” x 0.080″ Microstrip 0.507” x 0.040″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 1. MRF6V12500HR3(HSR3) Test Circuit Schematic Table 5. MRF6V12500HR3(HSR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 5.1 pF Chip Capacitors ATC100B5R1CT500XT ATC C3, C4, C5, C6 33 pF Chip Capacitors ATC100B330JT500XT ATC C7, C10 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88L Murata C8, C11, C13, C16 2.2 μF, 100 V Chip Capacitors 2225X7R225KT3AB ATC C9 22 μF, 25 V Chip Capacitor TPSD226M025R0200 AVX C12 1 μF, 100 V Chip Capacitor GRM31CR72A105KA01L Murata C14, C15 470 μF, 63 V Electrolytic Capacitors MCGPR63V477M13X26 - RH Multicomp R1, R2 56 Ω, 1/4 W Chip Resistors CRCW120656R0FKEA Vishay R3, R4 0 Ω, 3 A Chip Resistors CRCW12060000Z0EA Vishay MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 3 C14 C12 R3 C9 Rev. 1 C7 C13 C5 C3 C15 R1 CUT OUT AREA MRF6V12500H C8 C1 R2 C11 C10 C4 C2 C6 R4 C16 Figure 2. MRF6V12500HR3(HSR3) Test Circuit Component Layout MRF6V12500HR3 MRF6V12500HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 10000 160 MAXIMUM OPERATING Tcase (°C) Ciss C, CAPACITANCE (pF) 1000 Coss 100 Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 1 Crss 140 120 100 Pout = 525 W 80 Pout = 500 W 60 40 VDD = 50 Vdc, IDQ = 200 mA f = 1030 MHz, Pulse Width = 128 μsec 20 0 0.1 0 10 20 30 40 0 50 5 10 15 20 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) DUTY CYCLE (%) Figure 3. Capacitance versus Drain - Source Voltage Figure 4. Safe Operating Area 80 22 20 60 19 50 18 40 ηD 17 30 16 20 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 15 14 30 Pout, OUTPUT POWER (dBm) 70 Gps ηD, DRAIN EFFICIENCY (%) 21 Gps, POWER GAIN (dB) Pout = 475 W 10 0 1000 100 25 62 P3dB = 57.6 dBm (575 W) 61 Ideal 60 59 P1dB = 57.1 dBm (511 W) 58 57 Actual 56 55 54 53 52 51 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 50 49 32 34 36 38 40 42 30 Pout, OUTPUT POWER (WATTS) PULSED Pin, INPUT POWER (dBm) PULSED Figure 5. Pulsed Power Gain and Drain Efficiency versus Output Power Figure 6. Pulsed Output Power versus Input Power 22 22 21 IDQ = 800 mA 20 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 21 20 600 mA 400 mA 19 200 mA 19 18 17 16 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 40 V 30 100 VDD = 30 V 13 17 1000 45 V 15 14 18 50 V IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec Duty Cycle = 10% 12 30 35 V 100 Pout, OUTPUT POWER (WATTS) PULSED Pout, OUTPUT POWER (WATTS) PULSED Figure 7. Pulsed Power Gain versus Output Power Figure 8. Pulsed Power Gain versus Output Power 1000 MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 22 TC = −30_C 21 85_C 25_C Gps, POWER GAIN (dB) Pout, OUTPUT POWER (dBm) 600 500 55_C 400 300 200 VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 100 2 4 6 8 10 19 12 70 TC = −30_C 20 60 25_C 18 85_C 50 40 55_C 17 30 16 15 0 0 80 Gps 20 ηD VDD = 50 Vdc, IDQ = 200 mA, f = 1030 MHz Pulse Width = 128 μsec, Duty Cycle = 10% 14 30 10 0 1000 100 Pin, INPUT POWER (dBm) PULSED ηD, DRAIN EFFICIENCY (%) 700 Pout, OUTPUT POWER (WATTS) PULSED Figure 9. Pulsed Output Power versus Input Power Figure 10. Pulsed Power Gain and Drain Efficiency versus Output Power 109 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 500 W Peak, Pulse Width = 128 μsec, Duty Cycle = 10%, and ηD = 62%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF6V12500HR3 MRF6V12500HSR3 6 RF Device Data Freescale Semiconductor Zo = 5 Ω Zload f = 1030 MHz f = 1030 MHz Zsource VDD = 50 Vdc, IDQ = 200 mA, Pout = 500 W Peak f MHz Zsource W Zload W 1030 1.36 - j1.27 2.50 - j0.17 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb T A M B M M M bbb N M T A M B M ccc M T A M T A M B aaa M M T A (LID) B M S (LID) ccc H R (INSULATOR) B M M (INSULATOR) M C F E A SEATING PLANE T A DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF6V12500HR3 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N ccc M R (LID) M T A M B M ccc M T A M S (INSULATOR) bbb M T A M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A F T SEATING PLANE DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE (FLANGE) CASE 465A - 06 ISSUE H NI - 780S MRF6V12500HSR3 MRF6V12500HR3 MRF6V12500HSR3 8 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 0 Sept. 2009 Description • Initial Release of Data Sheet MRF6V12500HR3 MRF6V12500HSR3 RF Device Data Freescale Semiconductor 9 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2009. All rights reserved. MRF6V12500HR3 MRF6V12500HSR3 Document Number: MRF6V12500H Rev. 0, 9/2009 10 RF Device Data Freescale Semiconductor