NCE Power NCE15GD135P 1350v, 15a, trench npt igbt Datasheet

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NCE15GD135P
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NCE15GD135P
1350V, 15A, Trench NPT IGBT
Features
z
z
z
z
Trench NPT( Non Punch Through) IGBT
High speed switching
Low saturation voltage: VCE(sat)=2.0V@IC=15A
High input impedance
Applications
z
z
Inductive heating, Microwave oven, Inverter, UPS, etc.
Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1350V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Symbol Description
Ratings
Units
VCES
Collector to Emitter Voltage
1350
V
VGES
Gate to Emitter Voltage
+/-30
V
IC
ICM(1)
Continuous Collector Current
@TC=25°C
30
A
Continuous Collector Current
@TC=100°C
15
A
45
A
Pulsed Collector Current
IF
Diode Continuous Forward
IFM
Diode Maximum Forward
PD
Current
@TC=100°C
Current
15
90
A
Maximum Power Dissipation
@TC=25°C
220
W
Maximum Power Dissipation
@TC=100°C
88
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
300
°C
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
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Thermal Characteristics
Symbol Parameter
R
JC
RJA
Typ.
Max.
Units
Thermal Resistance, Junction to Case
-
0.57
°C/W
Thermal Resistance, Junction to Ambient
-
40
°C/W
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
Test Conditions
Min.
Typ. Max.
Units
VGE=0V, Ic=1mA
1350
-
-
V
ICES
Collector Cut-Off Current
VCE= VCES, VGE=0V
-
-
1
mA
IGES
G-E Leakage Current
VGE= VGES, VCE=0V
-
-
+/-250
nA
IC=15mA, VCE=VGE
4.0
5.5
7.0
V
IC=15A, VGE=15V
TC=25°C
-
2
2.5
V
IC=15A, VGE=15V
TC=125°C
-
2.15
-
V
-
2350
-
pF
-
70
-
pF
-
pF
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer
Capacitance
VCE=30V, VGE=0V,
f=1MHz
-
45
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
-
33
-
ns
-
80
-
ns
-
160
-
ns
-
255
330
ns
-
0.3
-
mJ
-
0.58
0.74
mJ
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
-
0.88
-
mJ
td(on)
Turn-On Delay Time
-
30
-
ns
-
115
-
ns
-
170
-
ns
-
390
-
ns
-
0.38
-
mJ
-
0.89
-
mJ
-
1.27
-
mJ
-
100
-
nC
-
19
-
nC
-
45
-
nC
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Ets
Total Switching Loss
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
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VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=15A,
VGE=15V
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Electrical Characteristics of Diode TC=25°C
Symbol Parameter
VFM
Diode Forward Voltage
trr
Diode Reverse Recovery
Time
Irr
Diode Peak Reverse
Recovery Current
Qrr
Diode Reverse Recovery
Charge
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Test Conditions
IF=15A
IF=15A,
dI/dt=200A/us
Page 3
Min. Typ. Max.
Units
25°C
1.4
V
125°C
1.42
V
25°C
575
ns
125°C
577
ns
25°C
30
A
125°C
37
A
25°C
8.7
uC
125°C
10.7
uC
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Typical Performance Characteristics
Figure 2. Typical Saturation Voltage
Characteristics
Collector Current, IC(A)
Collector Current IC, (A)
Figure 1. Typical Output Characteristics
Collector Emitter Voltage, VCE(V)
Figure 4. Saturation Voltage vs. VGE
Collector Emitter Voltage, Vce(V)
Collector Emitter Voltage, Vce(V)
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
Collector Emitter Voltage, VCE(V)
Case temperature, Tc(°C)
Figure 6. Capacitance Characteristics
Capacitance (pF)
Collector Emitter Voltage, Vce (V)
Figure 5. Saturation Voltage vs. VGE
Gate Emitter Voltage, VGE( V)
Gate Emitter Voltage, VGE( V)
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Collector Emitter Voltage, VCE(V)
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Typical Performance Characteristics (Continued)
Figure 8. Turn-off Characteristics vs. Gate
Resistance
Switching Time (ns)
Switching Time (ns)
Figure 7. Turn-on Characteristics vs. Gate
Resistance
Gate Resistance, RG (Ω)
Gate Resistance, RG (Ω)
Figure 10. Turn-on Characteristics vs. Collector
Current
Switching Loss (mJ)
Switching Loss (mJ)
Figure 9. Switching Loss vs. Gate Resistance
Collector Current, IC (A)
Gate Resistance, RG (Ω)
Figure 12. Switching Loss vs. Collector Current
Switching Loss (mJ)
Switching Loss (mJ)
Figure 11. Turn-Off Characteristics vs.
Collector Current
Collector Current, IC (A)
Collector Current, IC (A)
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Typical Performance Characteristics (Continued)
Figure 14. SOA Characteristics
Collector Current, IC(A)
Gate-Emitter Voltage (V)
Figure13. Gate Charge Characteristics
Gate Charge, Qg (nC)
Collector Emitter Voltage, (V)
Collector Current, IC(A)
Figure 15. Turn-Off SOA
Collector Emitter Voltage, (V)
Figure 16. Transient Thermal Impedance of IGBT
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TO-3P Mechanical Dimensions
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ATTENTION:
■
Any and all NCE products described or contained herein do not have specifications that can handle applications that
require
extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose
failure can be reasonably expected to result in serious physical and/or material damage. Consult
with your NCE representative nearest you before using any NCE products described or contained herein in such
applications.
■ NCE assumes no responsibility for equipment failures that result from using products at values that exceed, even
momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all NCE products described or contained herein.
■ Specifications of any and all NCE products described or contained herein stipulate the performance, characteristics,
and functions of the described products in the independent state, and are not guarantees of the performance,
characteristics, and functions of the described products as mounted in the customer’s products or equipment. To
verify symptoms and states that cannot be evaluated in an independent device, the customer should
always evaluate and test devices mounted in the customer’s products or equipment.
■ NCE Power Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or
that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of
accidents or events cannot occur. Such measures include but are not limited to protective circuits and error
prevention circuits for safe design, redundant design, and structural design.
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■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for
volume production. NCE believes information herein is accurate and reliable, but no guarantees are made or implied
regarding its use or any infringements of intellectual property rights or other rights of third parties.
■ Any and all information described or contained herein are subject to change without notice
due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
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■ This catalog provides information as of Mar. 2010. Specifications and information herein are subject to change without
notice.
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