NTE NTE2955 Mosfet n-channel, enhancement mode high speed switch Datasheet

NTE2955
MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Application:
D CS Switch for CRT Display Monitor
Absolute Maximum Ratings: (TC = +25°C unless otherwise specified)
Drain–Source Voltage (VGS = 0V), VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250V
Gate–Source Voltage (VDS = 0V), VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Drain Current, ID
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A
Avalanche Drain Current (Pulsed, L = 200µH), IDA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A
Maximum Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32W
Channel Temperature Range, Tch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Channel–to–Case, Rth(ch–c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.91°C/W
Isolation Voltage (AC for 1 minute, Terminal–to–Case), VISO . . . . . . . . . . . . . . . . . . . . . . . . . . . 2000V
Electrical Characteristics: (Tch = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Symbol
Test Conditions
V(BR)DSS VDS = 0V, ID = 1mA
Min
Typ
Max
Unit
250
–
–
V
Gate–Source Leakage
IGSS
VGS = ±20V, VDS = 0V
–
–
±10
µA
Zero Gate Voltage Drain Current
IDSS
VDS = 250V, VGS = 0
–
–
1.0
mA
Gate Threshold Voltage
VGS(th)
VDS = 10V, ID = 1mA
2.0
3.0
4.0
V
Static Drain–Source ON Resistance
RDS(on)
VGS = 10V, ID = 5A
–
0.40
0.52
Ω
Drain–Source On–State Voltage
VDS(on)
VGS = 10V, ID = 5A
–
2.0
2.6
V
|yfs|
VGS = 10V, ID = 5A
–
9.0
–
S
Forward Transfer Admittance
Electrical Characteristics (Cont’d): (Tch = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Typ
Max
Unit
–
950
–
pF
Input Capacitance
Ciss
Output Capacitance
Coss
–
90
–
pF
Reverse Transfer Capacitance
Crss
–
25
–
pF
Turn–On Delay Time
td(on)
–
20
–
ns
–
25
–
ns
td(off)
–
150
–
ns
tf
–
40
–
ns
–
0.95
–
V
Rise Time
tr
Turn–Off Delay Time
Fall Time
Diode Forward Voltage
VSD
VGS = 0V, VDS = 25V, f = 1MHz
Min
VDD = 150V, ID = 5A, VGS = 10V,
RGEN = RGS = 50Ω
Ω
IS = 5A, VGS = 0V
.181 (4.6)
Max
.126 (3.2) Dia Max
.405 (10.3)
Max
.114 (2.9)
Isol
.252
(6.4)
.622
(15.0)
Max
G
D
S
.118
(3.0)
Max
.531
(13.5)
Min
.098 (2.5)
.100 (2.54)