HL6501MG ODE-208-040A (Z) Rev.1 Dec. 13, 2006 Visible High Power Laser Diode Description The HL6501MG is a 0.65 µm band AlGaInP laser diode (LD) with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment. Hermetic sealing of the small package (φ5.6 mm) assures high reliability. Features • • • • • Package Type • HL6501MG: MG High output power: 35 mW (CW) Visible light output: λp = 658 nm Typ Small package: φ 5.6 mm Low astigmatism: 6 µm Typ (PO = 5 mW) Single longitudinal mode Internal Circuit 1 3 PD LD 2 Absolute Maximum Ratings (TC = 25°C) Item Symbol Optical output power PO Pulse optical output power PO(pulse) LD reverse voltage VR(LD) PD reverse voltage VR(PD) Operating temperature Topr Storage temperature Tstg Note: Pulse condition : Pulse width = 100 ns , duty = 50% Ratings 35 50 * 2 30 –10 to +60 –40 to +85 Unit mW mW V V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Threshold current Operating voltage Slope efficiency Beam divergence parallel to the junction Beam divergence perpendicular to the junction Astigmatism Lasing wavelength Monitor current Symbol Ith VOP ηs θ// Min 30 2.1 0.5 7 Typ 45 2.6 0.75 8.5 Max 70 3.0 1.0 10.5 Unit mA V mW/mA ° θ⊥ 18 22 26 ° AS λp IS — 645 0.05 6 658 0.2 — 665 1.5 µm nm mA Rev.1 Dec. 13, 2006 page 1 of 4 Test Conditions — PO = 30 mW 18 (mW) / (I(24mW) – I(6mW)) PO = 30 mW PO = 30 mW PO = 5 mW, NA = 0.55 PO = 30 mW PO = 30 mW, VR(PD) = 5 V HL6501MG Typical Characteristic Curves Threshold Current vs. Case Temperature 100 TC = 25°C 40 TC = 0°C Threshold current, Ith (mA) Optical output power, PO (mW) Optical Output Power vs. Forward Current 50 TC = 60°C 30 20 10 0 40 0 80 120 160 10 200 0 Monitor Current vs. Case Temperature 1.0 Monitor current, IS (mA) Slope efficiency, ηS (mW/mA) Slope Efficiency vs. Case Temperature 1.0 0.8 0.6 0.4 0.2 0 20 10 30 40 50 60 PO = 30 mW VR(PD) = 5 V 0.8 0.6 0.4 0.2 0 70 0 10 20 30 40 50 60 Case temperature, TC (°C) Case temperature, TC (°C) Lasing Wavelength vs. Case Temperature Far Feild Pattern 675 1.0 PO = 30 mW PO = 30 mW TC = 25°C 670 0.8 Perpendicular 665 Intensity Lasing wavelength, λp (nm) 20 30 40 50 60 70 80 Case temperature, TC (°C) Foward current, IF (mA) 0 10 660 0.6 0.4 Parallel 655 650 0.2 0 10 20 30 40 50 60 Case temperature, TC (°C) Rev.1 Dec. 13, 2006 page 2 of 4 70 0 -40 -30 -20 -10 0 10 20 30 40 Angle, θ ( ° ) HL6501MG Package Dimensions As of July, 2002 Unit: mm 0.4 +0.1 –0 φ 5.6 +0 –0.025 1.0 ± 0.1 (90˚) (0.4) 0.25 φ 4.1 ± 0.3 φ 3.55 ± 0.1 Glass 2.3 ± 0.2 φ 1.6 ± 0.2 1.27 6.5 ± 1.0 1.2 ± 0.1 Emitting Point 3 – φ 0.45 ± 0.1 1 1 2 3 3 2 φ 2.0 ± 0.2 OPJ Code JEDEC JEITA Mass (reference value) Rev.1 Dec. 13, 2006 page 3 of 4 LD/MG — — 0.3 g HL6501MG Cautions 1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. OPJ bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily injury, fire or other consequential damage due to operation of the OPJ product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from OPJ. 7. Contact our sales office for any questions regarding this document or OPJ products. 1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam shall be observed or adjusted through infrared camera or equivalent. 2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses. Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical experiments, when you handle the product. When disposing of the product, please follow the laws of your country and separate it from other waste such as industrial waste and household garbage. 3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ unless otherwise specified. Sales Offices Device Business Unit Opnext Japan, Inc. Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan Tel: (03) 3865-5591 For the detail of Opnext, Inc., see the following homepage: Japan (Japanese) Other area (English) http://www.opnext.com/jp/products/ http://www.opnext.com/products/ ©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan. Colophon 2.0 Rev.1 Dec. 13, 2006 page 4 of 4