WILLAS FM120-M+ MMBD3004S THRU HIGH VOLTAGE SURFACE MOUNT FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SWITCHING DIODE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H profile surface mounted • Low Switching Speed application in order to ·Fast optimize board space. ·High powerConductance loss, high efficiency. • Low current capability, low forward voltage drop. • High ·High Reverse Breakdown Voltage Rating • High surge capability. ·We declare that the material of product for overvoltage protection. • Guardring compliance with RoHS requirements. • Ultra high-speed switching. · Moisture Sensitivity Level 1 silicon junction. epitaxial planar chip, metal • Silicon parts meet environmental standards of • Lead-free Ordering Information(Pb-free) • 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) SOT –23 MIL-STD-19500 /228 RoHS product for packing code suffix "G" Device Marking Halogen free product for packing code suffix "H" MMBD3004S KAE Mechanical data Pb-Free package is available 0.012(0.3) Typ. Shipping 3000 / Tape &Reel 0.040(1.0) 0.024(0.6) • Epoxy : UL94-V0 rated flame retardant RoHS product for packing code suffix ”G” • Case : Molded plastic, SOD-123H Halogen free product for packing code suffix “H” , • Terminals :Plated terminals, solderable per MIL-STD-750 CAHODE/ANODE 3 0.031(0.8) Typ. 0.031(0.8) Typ. 2 1 ANODE Method 2026 • Polarity : Indicated by cathode band Position : Any @ TA=25℃ unless otherwise specified • Mounting Maximum Ratings • Weight : Approximated 0.011 gram Characteristic Symbol CATHODE Dimensions in inches and (millimeters) MMBD3004S Unit Repetitive Peak Reverse Voltage AND ELECTRICAL CHARACTERISTICS VRRM 350 MAXIMUM RATINGS Ratings atWorking 25℃ ambient temperature unless otherwise specified. Peak Reverse Voltage Single phase half wave, 60Hz, resistive of inductive load. DC Blocking Voltage For capacitive load, derate current by 20% RMS Reverse Voltage RATINGS Forward Continuous Current(Note 2) VR(RMS) IF 12 20 Maximum Recurrent Peak Reverse Voltage Peak Repetitive Forward Current(Note 2) VRRM Maximum DC Blocking Voltage VR 300 V 212 V SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U Marking Code Maximum RMS Voltage Non-Repetitive Peak VRWM V 14 VRMS @t=1.0µs Forward Surge Current VDC IO Maximum Average Forward Rectified Current Power Dissipation(Note 2) 20 @t=1.0s Peak Forward Surge Current 8.3 ms single half sine-wave IFSM Thermal Resistance Junction to Ambient Air(Note 2) superimposed on rated load (JEDEC method) Operating and Storage Temperature RangeRΘJA CJ Operating Temperature Range TJ 14 40 15 50 225 16 625 60 18 80 21 28 35 IFSM 30 40 50 4.0 42 60 1.0 Pd 350 R0JA 357 Tj, TSTG Typical Thermal Resistance (Note 2) Typical Junction Capacitance (Note 1) 13 30 IFRM mA 10 115 150 120 200 V 56 70 105 140 V 80 A100 150 200 V 100 mA 1.0 30 -65 to +150 40 Characteristic -55 to +125 ReverseCHARACTERISTICS Breakdown Voltage(Note 1) TSTG Symbol Maximum Average Reverse Current at @T A=25℃ Forward Voltage(Note 1) Rated DC Blocking Voltage @T A=125℃ IR 0.50 VF NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. Reverse Current(Note 1) IR Total Capacitance CT Reverse Recovery Time Trr 2- Thermal Resistance From Junction to Ambient Typ MAX Unit 2012-1 ℃ ℃ P -55 to +150 - 65 to +175 Test Condition 0.70 0.85 0.78 0.87 0.93 1.0 1.03 1.25 30 100 nA VR=240V 35 100 µA VR=240V, Tj=150℃ 1.0 5.0 Pf VR=0V, f=1.0MHZ 50 ns V IF=20mA 0.9 0.92 0.5 IF10 =100mA V m IF=200mA Notes: 1. Short duration test pulse used to minimize self-heating effect. 2. Part mounted on FR-4 board with recommended pad layout. 2012-06 A FM120-MH FM130-MH FM140-MH FM150-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U V(BR) R 350 V FM160-MH IR=100µA SYMBOL VF Maximum Forward Voltage at 1.0A DC Min ℃/W 120 Electrical Characteristics @ TA=25℃ unless otherwise specified, per element Storage Temperature Range A mW IF=IR=30mA Irr=3.0mA, RL=100Ω WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD3004S THRU HIGH VOLTAGE SURFACE MOUNT FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SWITCHING DIODE Pb Free Product SOD-123+ PACKAGE Package outline Features better reverse leakage current and thermal resistance. 500 • Low profile surface mounted application in order to optimize board space. Pd, POWER DISSIPATION (mW) • Low power loss, high efficiency. High current capability, low forward voltage drop. • 400 • High surge capability. • Guardring for overvoltage protection. Ultra high-speed switching. • 300 • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 200 • RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Mechanical data 100 • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , 0 • Terminals :Plated terminals, solderable per MIL-STD-750 0 100 Method 2026 TA, AMBIENT TEMPERATURE, (°C) IF, INSTANTANEOUS FORWARD CURRENT (mA) • Batch process design, excellent power dissipation offers Maximum 0.1 RMS Voltage Tj = 25°C Maximum DC Blocking Voltage 0.001 100 150 200 0.01 0.031(0.8) Typ. 0 0.031(0.8) Typ. 400 CHARACTERISTICS 2000 1.0 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vol VRMS 14 21 28 35 42 56 70 105 140 Vol VDC 20 30 40 50 60 80 100 150 200 Vol 0.8 IFSM 1.0 0.7 0.01 -55 to +125 0.1 30 1.0 Am 10 Am 100 ℃/W 40 VOLTAGE (V) VR, REVERSE 120 Total Capacitance Fig. 4 Typical vs. Reverse Voltage, per-55 element to +150 PF ℃ - 65 to +175 TSTG ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Forward Voltage at 1.0A DC 1600 1200 800 CHARACTERISTICS 250 Storage Temperature Range Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 0.040(1.0) 0.024(0.6) 12 20 300 350 RΘJA (V) Typical JunctionVCapacitance (Note 1) REVERSE VOLTAGE CJ R, INSTANTANEOUS Fig. 3 Typical Reverse Characteristics, per element Operating Temperature Range TJ 50 Typical Thermal Resistance (Note 2) 0.1 IO Peak Forward Surge Current 8.3 ms single half sine-wave 0 Tj = 25°C 1.0 VRRM Maximum0.01 Average Forward Rectified Current superimposed on rated load (JEDEC method) 0.071(1.8) 0.056(1.4) FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN SYMBOL FM120-MH FM130-MH0.9 Marking Code Maximum Recurrent Peak Reverse Voltage 10 1.1 CT, TOTAL CAPACITANCE (pF) Tj = 75°C 0.012(0.3) Typ. Tj = 150°C VF, INSTANTANEOUS FORWARD VOLTAGE (mV) Dimensions inches and (millimeters) Fig. 2 Typical ForwardinCharacteristics, per element Tj = 150°C MAXIMUM RATINGS AND ELECTRICAL 100 Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive of inductive load. 10 For capacitive load, derate current by 20% RATINGS 0.146(3.7) 0.130(3.3) 100 200 • Polarity Fig. : Indicated cathode bandtotal package 1 Powerby Derating Curve, • Mounting Position : Any 1000 • Weight : Approximated 0.011 gram 1.0 SOD-123H 1000 @T A=125℃ IR 0.50 0.70 0.85 0.9 0.92 0.5 10 Vol mAm NOTES: 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 2012-06 2012-1 WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP. WILLAS FM120-M+ MMBD3004S THRU HIGH VOLTAGE SURFACE MOUNT FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SWITCHING DIODE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to SOT-23 optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. .122(3.10) • Silicon epitaxial planar chip, metal silicon junction. .106(2.70) of • Lead-free parts meet environmental standards 0.012(0.3) Typ. .006(0.15)MIN. .063(1.60) .047(1.20) MIL-STD-19500 /228 0.146(3.7) 0.130(3.3) 0.071(1.8) 0.056(1.4) • RoHS product for packing code suffix "G" 0.031(0.8) Typ. Method 2026 .083(2.10) • Epoxy : UL94-V0 rated flame retardant • Case : Molded plastic, SOD-123H , • Terminals :Plated terminals, solderable per MIL-STD-750 .110(2.80) Halogen free product for packing code suffix "H" Mechanical data 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. .008(0.20) .080(2.04) • Polarity : Indicated by cathode band .070(1.78) • Mounting Position : Any • Weight : Approximated 0.011 gram Dimensions in inches and (millimeters) .003(0.08) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase half wave,.004(0.10)MAX. 60Hz, resistive of inductive load. For capacitive load, derate current by 20% RATINGS Marking Code VRRM .020(0.50) VRMS .012(0.30) Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified Current 21 28 35 42 56 70 105 140 Vo 20 30 40 50 60 80 100 150 200 Vo 12 20 13 30 14 40 15 50 16 60 18 80 10 100 115 150 120 200 Vo IO 1.0 Am IFSM 30 Am RΘJA 40 120 ℃/ Dimensions in inches and (millimeters) Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Thermal Resistance (Note 2) CJ Typical Junction Capacitance (Note 1) -55 to +125 TJ Operating Temperature Range Storage Temperature Range Maximum Forward Voltage at 1.0A DC 0.037 0.95 P -55 to +150 ℃ - 65 to +175 TSTG CHARACTERISTICS 0.037 0.95 ℃ SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN VF Maximum Average Reverse Current at @T A=25℃ Rated DC Blocking Voltage 14 .055(1.40) .035(0.89) SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN @T A=125℃ 0.50 0.70 0.85 0.9 0.92 0.5 IR 10 NOTES: Vo mA 0.079 2.0 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC. 2- Thermal Resistance From Junction to Ambient 0.035 0.9 0.031 0.8 2012-06 2012-1 inches mm WILLAS ELECTRONIC CORP. WILLAS ELECTRONIC CORP.