19-0771; Rev 0; 4/07 KIT ATION EVALU LE B A IL A AV Dual Bidirectional Low-Level Translator in µDFN The MAX3397E ±15kV ESD-protected bidirectional level translator provides level shifting for data transfer in a multivoltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. A logic-low signal present on the VL side of the device appears as a logic-low signal on the VCC side of the device, and vice versa. The MAX3397E utilizes a transmission-gate-based design to allow data translation in either direction (VL ↔ VCC) on any single data line. The MAX3397E accepts VL from +1.2V to +5.5V and VCC from +1.65V to +5.5V, making the device ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems. The MAX3397E features a shutdown mode that reduces supply current to less than 1µA, thermal short-circuit protection, and ±15kV ESD protection on the VCC side for greater protection in applications that route signals externally. The MAX3397E operates at a guaranteed data rate of 8Mbps over the entire specified operating voltage range. Within specific voltage domains, higher data rates are possible. See the Timing Characteristics table. The MAX3397E is available in an 8-pin µDFN package and specified over the extended -40°C to +85°C operating temperature range. Applications Cell Phones, MP3 Players Telecommunications Equipment Features ♦ Bidirectional Level Translation ♦ Guaranteed Data Rate 8Mbps (+1.2V ≤ VL ≤ VCC ≤ +5.5V) 16Mbps (+1.8V ≤ VL ≤ VCC ≤ +3.3V) ♦ Extended ESD Protection on the I/O VCC Lines ±15kV Human Body Model ±15kV Air-Gap Discharge per IEC61000-4-2 ±8kV Contact Discharge per IEC61000-4-2 ♦ Enable/Shutdown ♦ Ultra-Low 1µA Supply Current in Shutdown Mode ♦ 8-Pin µDFN Package Ordering Information PART TEMP RANGE PINPACKAGE MAX3397EELA+ -40°C to +85°C 8 µDFN (2mm x 2mm) TOP MARK PKG CODE ABU L822-1 +Denotes a lead-free package. SPI™, MICROWIRE™, and I2C Level Translation Pin Configuration Portable POS Systems, Smart Card Readers VCC EN I/O VL1 8 7 6 5 1 2 3 4 VL I/O VL2 SPI is a trademark of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor Corp. MAX3397E GND I/O VCC1 Low-Cost Serial Interfaces, GPS + I/O VCC2 Typical Application Circuit appears at end of data sheet. µDFN (2mm x 2mm) ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX3397E General Description MAX3397E Dual Bidirectional Low-Level Translator in µDFN ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND.) VCC, VL .....................................................................-0.3V to +6V I/O VCC_......................................................-0.3V to (VCC + 0.3V) I/O VL_ ..........................................................-0.3V to (VL + 0.3V) EN.............................................................................-0.3V to +6V Short-Circuit Duration I/O VL_, I/O VCC_ to GND .......Continuous Continuous Power Dissipation (TA = +70°C) 8-Pin µDFN (derate 4.8mW/°C above +70°C) ............ 381mW Operating Temperature Range ...........................-40°C to +85°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS POWER SUPPLIES VL Supply Range VCC Supply Range Supply Current from VCC Supply Current from VL VCC Shutdown-Mode Supply Current VL Shutdown-Mode Supply Current I/O VL_ and I/O VCC_ ShutdownMode Leakage Current VL 1.2 5.5 V VCC 1.65 5.50 V IQVCC 130 300 µA IQVL 1 10 µA ISHUTDOWN-VCC TA = +25°C, EN = GND 0.03 1 µA ISHUTDOWN-VL TA = +25°C, EN = GND 0.03 1 µA ISHUTDOWN-LKG TA = +25°C, EN = GND 0.02 1 µA TA = +25°C 0.02 1 µA EN Input Leakage Tri-State Threshold Low VTH_L VCC falling (Note 3) 1.5 V Tri-State Threshold High VTH_H VCC rising (Note 3) 1 V ESD PROTECTION I/O VCC Human Body Model (Note 4) ±15 kV LOGIC-LEVEL THRESHOLDS I/O VL_ Input-Voltage High VIHL I/O VL_ Input-Voltage Low VILL I/O VCC_ Input-Voltage High VIHC I/O VCC_ Input-Voltage Low VILC VL 0.2 0.15 VCC 0.4 I/O VL_ Output-Voltage High VOHL I/O VL_ Output-Voltage Low VOLL I/O VL_ sink current = 1mA, I/O VCC_ < 0.15V 0.67 x VL _______________________________________________________________________________________ V V 0.15 I/O VL_ source current = 20µA, I/O VCC_ > VCC - 0.4V 2 V V V 0.4 V Dual Bidirectional Low-Level Translator in µDFN (VCC = +1.65V to +5.5V, VL = +1.2V to 5.5V, I/O VL_, and I/O VCC_ are unconnected, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS I/O VCC_ Output-Voltage High VOHC I/O VCC_ source current = 20µA, I/O VL _ > VL - 0.2V I/O VCC_ Output-Voltage Low VOLC I/O VCC_ sink current = 1mA, I/O VL_ < 0.15V EN Input-Voltage High VIH-EN EN Input-Voltage Low VIL-EN MIN TYP MAX 0.67 x VCC UNITS V 0.4 VL 0.2 V V 0.15 V RISE/FALL-TIME ACCELERATOR STAGE Transition-Detect Threshold I/O VCC side 0.8 I/O VL side 0.8 Accelerator Pulse Duration VL = 1.2V, VCC = 1.65V 27 I/O VL_ Output-Accelerator Source Impedance VL = 1.2V, VCC = 1.65V 40 VL = 5V, VCC = 5V 9 I/O VCC_ Output-Accelerator Source Impedance VL = 1.2V, VCC = 1.65V 30 VL = 5V, VCC = 5V 12 V ns Ω Ω TIMING CHARACTERISTICS (VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1MΩ, CLOAD = 15pF, driver output impedance ≤ 50Ω, I/O test signal of Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX 7 25 170 400 Push-pull driving (Figure 1a) 6 37 Open-drain driving (Figure 1c) 6 37 UNITS +1.2V ≤ VL ≤ VCC ≤ +5.5V I/O VCC_ Rise Time tRVCC I/O VCC_ Fall Time tFVCC I/O VL_ Rise Time tRVL I/O VL_ Fall Time tFVL Push-pull driving (Figure 1a) Open-drain driving (Figure 1c) Push-pull driving (Figure 1b) 8 30 180 400 Push-pull driving (Figure 1b) 3 30 Open-drain driving (Figure 1d) 3 30 Open-drain driving (Figure 1d) tPD-VL-VCC Driving I/O VL_ tPD-VCC-VL Driving I/O VCC_ Propagation Delay Channel-to-Channel Skew Maximum Data Rate tSKEW Each translator equally loaded Push-pull driving Open-drain driving Push-pull driving (Figure 1a) Open-drain driving (Figure 1c) Push-pull driving (Figure 1b) Open-drain driving (Figure 1d) 5 30 170 800 4 30 190 1000 Push-pull driving 20 Open-drain driving 50 ns ns ns ns ns ns 8 Mbps 500 kbps _______________________________________________________________________________________ 3 MAX3397E ELECTRICAL CHARACTERISTICS (continued) TIMING CHARACTERISTICS (continued) (VCC = +1.65V to +5.5V, VL = +1.2V to +5.5V, RLOAD = 1MΩ, CLOAD = 15pF, driver output impedance ≤ 50Ω, I/O test signal of Figure 1, TA = TMIN to TMAX, unless otherwise noted. Typical values are at VCC = +3.3V, VL = +1.8V, TA = +25°C.) (Notes 1, 2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS +1.8V ≤ VL ≤ VCC ≤ +3.3V I/O VCC_ Rise Time tRVCC Figure 1a (Note 5) 15 ns I/O VCC_ Fall Time tFVCC Figure 1a (Note 6) 15 ns I/O VL_ Rise Time tRVL Figure 1b (Note 5) 15 ns I/O VL_ Fall Time tFVL Figure 1b (Note 6) 15 ns tPD-VL-VCC Driving I/O VL_ 15 tPD-VCC-VL Driving I/O VCC_ 15 Each translator equally loaded 10 Propagation Delay Channel-to-Channel Skew tSKEW Maximum Data Rate 16 ns ns Mbps Note 1: All units are 100% production tested at TA = +25°C. Limits over the operating temperature range are guaranteed by design and not production tested. Note 2: For normal operation, ensure VL < (VCC + 0.3V). Note 3: When VCC is below VL by more than the tri-state threshold, the device turns off its pullup resistors and I/O_ enters tri-state. The device is not in shutdown. Note 4: To ensure maximum ESD protection, place a 1µF capacitor between VCC and GND. See the Typical Application Circuit. Note 5: 10% of input to 90% of output. Note 6: 90% of input to 10% of output. Typical Operating Characteristics (VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.) VL SUPPLY CURRENT (µA) 200 150 100 800 200 150 100 50 50 700 600 500 400 300 200 100 0 0 0 1.65 2.20 2.75 3.30 3.85 4.40 VCC SUPPLY VOLTAGE (V) 4 250 MAX3397E toc03 250 VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE (DRIVING ONE I/O VL_) VCC SUPPLY CURRENT (µA) MAX3397E toc01 300 VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE (DRIVING ONE I/O VCC_) MAX3397E toc02 VL SUPPLY CURRENT vs. VCC SUPPLY VOLTAGE (DRIVING ONE I/O VL_) VL SUPPLY CURRENT (µA) MAX3397E Dual Bidirectional Low-Level Translator in µDFN 4.95 5.50 1.65 2.20 2.75 3.30 3.85 4.40 VCC SUPPLY VOLTAGE (V) 4.95 5.50 1.2 1.9 2.6 VL SUPPLY VOLTAGE (V) _______________________________________________________________________________________ 3.3 Dual Bidirectional Low-Level Translator in µDFN 160 200 150 100 140 120 100 80 60 200 150 100 50 20 0 0 0 1.2 1.9 2.6 -40 3.3 -15 10 35 60 85 -40 -15 10 35 60 85 VL SUPPLY VOLTAGE (V) TEMPERATURE (°C) TEMPERATURE (°C) VL SUPPLY CURRENT vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_) VCC SUPPLY CURRENT vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_) RISE/FALL TIME vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_) 80 60 40 800 600 400 20 0 0 0 5 10 tRVCC 0 0 10 15 20 25 30 35 40 45 50 tFVCC 15 5 200 20 MAX3397E toc09 1000 RISE/FALL TIME (ns) 100 25 MAX3397E toc08 120 1200 VCC SUPPLY CURRENT (µA) MAX3397E toc07 140 5 10 15 20 25 30 35 40 45 50 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) CAPACITIVE LOAD (pF) CAPACITIVE LOAD (pF) PROPAGATION DELAY vs. CAPACITIVE LOAD (DRIVING ONE I/O VL_) RISE/FALL TIME vs. CAPACITIVE LOAD (DRIVING ONE I/O VCC_) PROPAGATION DELAY vs. CAPACITIVE LOAD (DRIVING ONE I/O VCC_) 8 6 4 8 6 4 2 2 0 0 10 tFVL MAX3397E toc12 10 RISE/FALL TIME (ns) 10 tRVL 9 8 PROPAGATION DELAY (ns) 12 MAX3397E toc10 12 MAX3397E toc11 VL SUPPLY CURRENT (µA) 250 40 50 PROPAGATION DELAY (ns) 300 VL SUPPLY CURRENT (µA) 250 350 MAX3397E toc05 180 VL SUPPLY CURRENT (µA) 300 VCC SUPPLY CURRENT (µA) 200 MAX3397E toc04 350 VL SUPPLY CURRENT vs. TEMPERATURE (DRIVING ONE I/O VCC_) VL SUPPLY CURRENT vs. TEMPERATURE (DRIVING ONE I/O VL_) MAX3397E toc06 VCC SUPPLY CURRENT vs. VL SUPPLY VOLTAGE (DRIVING ONE I/O VCC_) 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) 0 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) 0 5 10 15 20 25 30 35 40 45 50 CAPACITIVE LOAD (pF) _______________________________________________________________________________________ 5 MAX3397E Typical Operating Characteristics (continued) (VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.) MAX3397E Dual Bidirectional Low-Level Translator in µDFN Typical Operating Characteristics (continued) (VCC = +3.3V, VL = +1.8V, RLOAD = 1MΩ, CLOAD = 15pF, TA = +25°C, data rate = 8Mbps, unless otherwise noted.) RAIL-TO-RAIL DRIVING (DRIVING ONE I/O VL_) EXITING SHUTDOWN MODE MAX3397E toc14 MAX3397E toc13 I/O VL_ I/O VL_ 1V/div 1V/div 2V/div I/O VCC_ 1V/div I/O VCC_ 1V/div EN 2µs/div 20ns/div Pin Description PIN NAME 1 I/O VCC2 2 GND FUNCTION Input/Output 2. Referenced to VCC. Ground Logic-Input Voltage. The supply voltage range is +1.2V ≤ VL ≤ +5.5V. Bypass this supply with a 0.1µF capacitor located as close as possible to the input. 3 VL 4 I/O VL2 5 I/O VL1 6 EN Enable Input. Drive EN high to enable the device. Drive EN low to put the device in shutdown mode. 7 VCC VCC Input Voltage. The supply voltage range is +1.65V ≤ VL ≤ +5.5V. Bypass this supply with a 0.1µF capacitor located as close as possible to the input. A 1µF ceramic capacitor is recommended for full ESD protection. 8 I/O VCC1 Input/Output 2. Referenced to VL. Input/Output 1. Referenced to VL. Input/Output 1. Referenced to VCC. Detailed Description The MAX3397E bidirectional, ESD-protected level translator provides the level shifting necessary to allow data transfer in a multivoltage system. Externally applied voltages, VCC and VL, set the logic levels on either side of the device. A logic-low signal present on the VL side of the device appears as a logic-low signal on the VCC side of the device, and vice versa. The device uses a transmission-gate-based design (see the Functional Diagram) to allow data translation in either direction (V L ↔ V CC ) on any single data line. The MAX3397E accepts VL from +1.2V to +5.5V and VCC 6 from +1.65V to +5.5V, making the device ideal for data transfer between low-voltage ASICs/PLDs and higher voltage systems. The MAX3397E features a shutdown mode that reduces the supply current to less than 1µA, thermal short-circuit protection, and ±15kV ESD protection on the VCC side for greater protection in applications that route signals externally. The device operates at a guaranteed data rate of 8Mbps over the entire specified operating voltage range. Within specific voltage domains, higher data rates are possible. See the Timing Characteristics table. _______________________________________________________________________________________ Dual Bidirectional Low-Level Translator in µDFN VL VCC VL VCC VL VCC VCC EN EN MAX3397E MAX3397E DATA DATA GND I/O VCC_ I/O VL _ I/O VCC_ I/O VL _ MAX3397E VL RLOAD CLOAD I/O VL_ (tRISE, tFALL < 10ns) CLOAD RLOAD GND I/O VCC_ (tRISE, tFALL < 10ns) tPD-VL-VCC tPD-VL-VCC I/O VCC_ tPD-VCC-VL tPD-VCC-VL tRVL tFVL I/O VL _ tRVCC tFVCC Figure 1a. Rail-to-Rail Driving I/O VL Figure 1b. Rail-to-Rail Driving I/O VCC Level Translation For proper operation, ensure that +1.65V ≤ VCC ≤ +5.5V and +1.2V ≤ VL ≤ +5.5V. During power-up sequencing, VL ≥ (VCC + 0.3V) does not damage the device. The speed-up circuitry limits the maximum data rate for the MAX3397E to 16Mbps. The maximum data rate also depends heavily on the load capacitance (see the Typical Operating Characteristics), output impedance of the driver, and the operational voltage range (see the Timing Characteristics table). Rise-Time Accelerators The MAX3397E has an internal rise-time accelerator, allowing operation up to 16Mbps. The rise-time accelerators are present on both sides of the device and act to speed up the rise time of the input and output of the device, regardless of the direction of the data. The triggering mechanism for these accelerators is both level and edge sensitive. To prevent false triggering of the rise-time accelerators, signal fall times of less than 20ns/V are recommended for both the inputs and outputs of the device. Under less noisy conditions, longer signal fall times are acceptable. Note: To guarantee operation of the rise time, accelerators the maximum parasitic capacitance should be less than 200pF on the I/O lines. Shutdown Mode Drive EN low to place the MAX3397E in shutdown mode. Connect EN to VL or VCC (logic-high) for normal operation. Activating the shutdown mode disconnects the internal 10kΩ pullup resistors on the I/O VCC and I/O VL lines. This forces the I/O lines to a high-impedance state, and decreases the supply current to less than 1µA. The high-impedance I/O lines in shutdown mode allow for use in a multidrop network. The MAX3397E effectively has a diode from each I/O to the corresponding supply rail and GND. Therefore, when in shutdown mode, do not allow the voltage at I/O VL_ to exceed (V L + 0.3V), or the voltage at I/O V CC_ to exceed (VCC + 0.3V). _______________________________________________________________________________________ 7 MAX3397E Dual Bidirectional Low-Level Translator in µDFN VL VL VCC VL VCC VCC VL VCC EN EN MAX3397E MAX3397E DATA DATA I/O VCC_ I/O VL_ I/O VCC_ I/O VL_ CLOAD GND CLOAD RLOAD I/O VL_ GND RLOAD I/O VCC_ tPD-VL-VCC tPD-VCC-VL tPD-VL-VCC tPD-VCC-VL I/O VCC_ I/O VL_ tRVCC tFVCC Figure 1c. Open-Drain Driving I/O VL tRVL tFVL Figure 1d. Open-Drain Driving I/O VCC Operation with One Supply Disconnected Thermal Short-Circuit Protection Certain applications require sections of circuitry to be disconnected to save power. When VL is connected and VCC is disconnected or connected to ground, the device enters shutdown mode. In this mode, I/O VL can still be driven without damage to the device; however, data does not translate from I/O VL to I/O VCC. If VCC falls more than 0.8V (typ) below VL, the device disconnects the pullup resistors at I/O VL and I/O VCC. To achieve the lowest possible supply current from VL when VCC is disconnected, it is recommended that the voltage at the VCC supply input be approximately equal to GND. Note: When VCC is disconnected or connected to ground, I/O VCC must not be driven more than VCC + 0.3V. Thermal-overload detection protects the MAX3397E from short-circuit fault conditions. In the event of a short-circuit fault, when the junction temperature (TJ) reaches +150°C, a thermal sensor signals the shutdown mode logic to force the device into shutdown mode. When the T J has cooled to +140°C, normal operation resumes. When VCC is connected and VL is less than 0.7V (typ), the device enters shutdown mode. In this mode, I/O VCC can still be driven without damage to the device; however, data does not translate from I/O VCC to I/O VL. Note: When V L is disconnected or connected to ground, I/O VL must not be driven more than VL + 0.3V. 8 ±15kV ESD Protection As with all Maxim devices, ESD-protection structures are incorporated on all pins to protect against electrostatic discharges encountered during handling and assembly. The I/O V CC lines have extra protection against static electricity. Maxim’s engineers have developed state-of-the-art structures to protect these pins against ESD of ±15kV without damage. The ESD structures withstand high ESD in all states: normal operation, shutdown mode, and powered down. After an ESD event, Maxim’s E versions keep working without _______________________________________________________________________________________ Dual Bidirectional Low-Level Translator in µDFN VL VCC EN PU1 ONE-SHOT BLOCK ONE-SHOT BLOCK PU2 TRIGGER GATE BIAS MAX3397E I/O VL_ I/O VCC_ N GND latchup, whereas competing products can latch and must be powered down to remove latchup. ESD protection can be tested in various ways. The I/O VCC lines of the MAX3397E are characterized for protection to the following limits: 1) ±15kV using the Human Body Model 2) ± 8kV using the Contact Discharge method specified by IEC 61000-4-2 RC 1MΩ CHARGE-CURRENTLIMIT RESISTOR HIGHVOLTAGE DC SOURCE Cs 100pF RD 1500Ω DISCHARGE RESISTANCE DEVICE UNDER TEST STORAGE CAPACITOR 3) ±15kV using the Air-Gap Discharge method specified by IEC 61000-4-2 ESD Test Conditions ESD performance depends on a variety of conditions. Contact Maxim for a reliability report that documents test setup, test methodology, and test results. Human Body Model Figure 2a shows the Human Body Model, and Figure 2b shows the current waveform it generates when discharged into a low-impedance state. This model consists of a 100pF capacitor charged to the ESD voltage of interest that is then discharged into the test device through a 1.5kΩ resistor. IEC 61000-4-2 The IEC 61000-4-2 standard covers ESD testing and performance of finished equipment; it does not specifically refer to integrated circuits. The MAX3397E helps Figure 2a. Human Body ESD Test Model IP 100% 90% Ir PEAK-TO-PEAK RINGING (NOT DRAWN TO SCALE) AMPERES 36.8% 10% 0 0 tRL TIME tDL CURRENT WAVEFORM Figure 2b. Human Body Current Waveform _______________________________________________________________________________________ 9 MAX3397E Functional Diagram to design equipment that meets Level 4 of IEC 610004-2 without the need for additional ESD-protection components. The major difference between tests done using the Human Body Model and IEC 61000-4-2 is higher peak current in IEC 61000-4-2 because series resistance is lower in the IEC 61000-4-2 model. Hence, the ESD withstand voltage measured to IEC 61000-4-2 is generally lower than that measured using the Human Body Model. Figure 3a shows the IEC 61000-4-2 model, and Figure 3b shows the current waveform for the ±8kV, IEC 61000-4-2, Level 4, ESD contact-discharge test. The Air-Gap test involves approaching the device with a charged probe. The contact-discharge method connects the probe to the device before the probe is energized. RC 50MΩ to 100MΩ CHARGE-CURRENTLIMIT RESISTOR HIGHVOLTAGE DC SOURCE Cs 150pF Machine Model The Machine Model for ESD tests all pins using a 200pF storage capacitor and zero discharge resistance. Its objective is to emulate the stress caused by contact that occurs with handling and assembly during manufacturing. Of course, all pins require this protection during manufacturing, not just inputs and outputs. Therefore, after PCB assembly, the Machine Model is less relevant to I/O ports. Applications Information Power-Supply Decoupling To reduce ripple and the chance of transmitting incorrect data, bypass VL and VCC to ground with a 0.1µF capacitor (see the Typical Application Circuit). To ensure full ±15kV ESD protection, bypass VCC to ground with a 1µF capacitor. Place all capacitors as close as possible to the power-supply inputs. RD 330Ω I2C Level Translation DISCHARGE RESISTANCE STORAGE CAPACITOR DEVICE UNDER TEST The MAX3397E level-shifts the data present on the I/O lines between +1.2V and +5.5V, making them ideal for level translation between a low-voltage ASIC and an I2C device. A typical application involves interfacing a low-voltage microprocessor to a 3V or 5V D/A converter, such as the MAX517. Push-Pull vs. Open-Drain Driving The MAX3397E can be driven in a push-pull configuration and include internal 10kΩ resistors that pull up I/O VL_ and I/O VCC_ to their respective power supplies, allowing operation of the I/O lines with open-drain devices. See the Timing Characteristics table for maximum data rates when using open-drain drivers. Figure 3a. IEC 61000-4-2 ESD Test Model I 100% Chip Information 90% PROCESS: BiCMOS I PEAK MAX3397E Dual Bidirectional Low-Level Translator in µDFN 10% t r = 0.7ns to 1ns t 30ns 60ns Figure 3b. IEC 61000-4-2 ESD Generator Current Waveform 10 ______________________________________________________________________________________ Dual Bidirectional Low-Level Translator in µDFN +1.8V +3.3V 0.1µF 0.1µF VL 1µF VCC EN +1.8V SYSTEM CONTROLLER +3.3V SYSTEM MAX3397E DATA I/O VL1 I/O VCC1 I/O VL2 I/O VCC2 DATA ______________________________________________________________________________________ 11 MAX3397E Typical Application Circuit Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) A D XXXX XXXX XXXX b e N SOLDER MASK COVERAGE E PIN 1 0.10x45∞ L PIN 1 INDEX AREA 6, 8, 10L UDFN.EPS MAX3397E Dual Bidirectional Low-Level Translator in µDFN L1 1 SAMPLE MARKING A A (N/2 -1) x e) 7 CL CL b L A A2 A1 L e EVEN TERMINAL e ODD TERMINAL PACKAGE OUTLINE, 6, 8, 10L uDFN, 2x2x0.80 mm -DRAWING NOT TO SCALE- 12 21-0164 ______________________________________________________________________________________ A 1 2 Dual Bidirectional Low-Level Translator in µDFN COMMON DIMENSIONS SYMBOL MIN. NOM. A 0.70 0.75 0.80 A1 0.15 0.20 0.25 0.035 A2 0.020 0.025 D 1.95 2.00 E 1.95 2.00 L 0.30 0.40 L1 MAX. - 2.05 2.05 0.50 0.10 REF. PACKAGE VARIATIONS PKG. CODE N e b (N/2 -1) x e L622-1 6 0.65 BSC 0.30±0.05 1.30 REF. L822-1 8 0.50 BSC 0.25±0.05 1.50 REF. L1022-1 10 0.40 BSC 0.20±0.03 1.60 REF. PACKAGE OUTLINE, 6, 8, 10L uDFN, 2x2x0.80 mm -DRAWING NOT TO SCALE- 21-0164 A 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 13 © 2007 Maxim Integrated Products Springer is a registered trademark of Maxim Integrated Products, Inc. MAX3397E Package Information (continued) (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.)