WJ FH101 High dynamic range fet Datasheet

FH101
The Communications Edge ™
Product Information
High Dynamic Range FET
Product Features
• 50-3000 MHz Bandwidth
• +36 dBm Output IP3
• 1.2 dB Noise Figure
• 18 dB Gain
• +18 dBm P1dB
• Single or Dual Supply Operation
• MTBF >100 Years
• SOT-89 SMT Package
Product Description
The FH101 is a high dynamic range FET packaged
in a low cost surface mount package. The device is
available in both the standard SOT-89 package
and the environmentally friendly lead-free and
“green” SOT-89 package. The combination of low
noise figure and high output IP3 at the same bias
point makes it ideal for receiver and transmitter
applications. The FH101 achieves +36 dBm OIP3
at a mounting temperature of 85°C with an associated MTBF of >100 years. The package is a SOT89. All devices are 100% RF and DC tested.
The product is targeted for applications where high
linearity is required.
Actual Size
DC Electrical Parameter Units
Min.
Saturated Drain Current, Idss mA
100
Transconductance, Gm
mS
Pinch Off Voltage, Vp
V
-3.0
Units
Min.
dB
17
Max Stable Gain, Gmsg
dB
dBm
Output P1dB
Noise Figure, NF
Typical Max.
140
-1.5
Typical Max.
18
23
32
36
dBm
18
dB
1.2
7
170
120
Small Signal Gain, Gss
Output IP3
4
1
2
3
Function
Pin No.
Gate
Source
Drain
Source
1
2
3
4
Typical Parameters
Specifications
RF Parameter
Functional Diagram
Parameter
Units
Frequency
S21
S11
S22
Output IP3
Output P1dB
Noise Figure
MHz
dB
dB
dB
dBm
dBm
dB
Drain Bias Supply
Gate Bias
Typical
900
19.0
-10.7
-9.7
+38.0
+18.8
2.7
1900
16.0
-12.3
-17.2
+33.6
+19.1
3.1
5 V @ 140 mA
0V
Typical parameters reflect performance in an application circuit.
Notes:
1. DC and RF parameters measured under the following conditions unless otherwise noted.
25°C with Vds = 5.0 V, Vgs = 0 V, test frequency = 800 MHz, 50 W system.
2. OIP3 measured with two tones at an output power of 5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the OIP3 using a 2:1 slope rule.
3. Device needs appropriate match to become unconditionally stable.
4. Degradation of OIP3 occurs at low temperatures. Minimum typical OIP3 at -40°C is +36 dBm.
5. Idss is measured with Vgs = 0 V.
6. Pinch off voltage is measured when Ids = 0.6 mA.
7. Measured with Vds = 3.3 V, 50% Idss.
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Gate Current
Operating Case Temperature
Storage Temperature
Input RF Power (continuous)
Ordering Information
Rating
Part No.
Description
+6.0 V
-6.0 V
4.5 mA
-40 to +85°C
-55 to +125°C
+10 dBm
FH101
FH101-G
High Dynamic Range FET (leaded)1
High Dynamic Range FET (lead-free)2
1 Product may contain lead-bearing materials. Maximum +235°C reflow temperature.
2 Product does not contain lead-bearing materials. Maximum +260°C reflow temperature. Also
compatible with leaded soldering process.
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
April 2004
FH101
The Communications Edge ™
Product Information
High Dynamic Range FET
OIP3 vs. Frequency
Gain vs. Temperature
5V 100% Idss
5
21
3.3V 50% Idss
20
10
NF (dB)
30
17
15
1
1.5
2
Frequency (GHz)
2.5
1
0
0
3
.5
1
45
45
OIP3 (dBm)
OIP3 (dBm)
OIP3 vs. Temperature
50
40
5V, 100% Idss
35
5V, 100% Idss
2
3.3V 50% Idss
5V, 100% Idss
11
.5
3
Gain at +85°C
13
50
1.5
2
2.5
3
0
.5
1
1.5
0
20
40
60
80
100
2.5
Frequency (GHz)
OIP3 vs. Power Out
S-Parameters
3
40
2.05
0.05
2.05
0.05
S22
30
-20
2
Frequency (GHz)
35
30
-40
4
Gain at -40°C
Gain at +22°C
19
Gain(dB)
OIP3 (dBm)
40
0
0
NF vs. Frequency
23
50
0
2
4
6
8
10
12
14
16
18
Output Power (dBm)
Temperature (°C)
S11
S11 and S22
Thermal Specifications
Operating Case Temperature
Thermal Resistance (Maximum)
Junction Temperature
(Recommended Maximum)
Rating
-40 to +85°C
59°C/W
+160°C
Notes:
1. Thermal Resistance determined at Maximum Tab Temperature and Maximum Power
Dissipation.
2. Recommended Maximum Junction Temperature insures a MTBF of 1 million hours.
108
MTBF (hours)
Parameter
MTBF vs. Temperature
109
107
106
105
50
Junction
Ground Tab
75
100
125
150
Temperature (°C)
175
200
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
April 2004
FH101
The Communications Edge ™
Product Information
High Dynamic Range FET
Outline Drawing
XXXX
XXXX-X
1
Land Pattern
ESD / MSL Information
'XXXX' = Part Designation = 'FH1' for FH101
'XXXX' = Part Designation = 'FH1G' for FH101-G
'1' = Lasermark
'XXXX-X' = Lot Code
ESD Classification:
Value:
Test:
Standard:
Class 1B
Passes at 600 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Classification:
Value:
Test:
Standard:
Class IV
Passes at 1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
FH101
MSL Rating:
Standard:
Level 3 at +225°C convection reflow
JEDEC Standard J-STD-020
FH101-G
MSL Rating:
Standard:
Level 3 at +260°C convection reflow
JEDEC Standard J-STD-020
Mounting Configuration
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
April 2004
FH101
The Communications Edge ™
Product Information
High Dynamic Range FET
Typical Test Data
S-Parameters (Vds = +5 V, 100% Idss, T = 22°C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05
0.30
0.55
0.80
1.05
1.30
1.55
1.80
2.05
2.30
2.55
2.80
3.05
0.997
0.993
0.968
0.928
0.905
0.868
0.841
0.815
0.780
0.766
0.754
0.754
0.748
-3.940
-22.800
-42.900
-62.100
-79.100
-95.800
-111.000
-126.000
-142.000
-155.000
-168.000
-180.000
169.000
19.789
19.370
19.133
18.639
18.116
17.478
16.852
16.191
15.519
14.901
14.253
13.679
13.103
9.760
9.300
9.050
8.550
8.050
7.480
6.960
6.450
5.970
5.560
5.160
4.830
4.520
175.000
162.000
147.000
133.000
121.000
109.000
97.500
86.900
76.800
67.300
58.300
49.600
41.200
0.002
0.015
0.027
0.037
0.046
0.053
0.059
0.063
0.068
0.071
0.073
0.074
0.075
97.900
76.000
66.100
54.400
45.800
35.500
27.400
20.100
13.400
6.700
0.425
-5.810
-12.300
0.502
0.492
0.455
0.424
0.398
0.361
0.329
0.308
0.296
0.268
0.240
0.216
0.191
-6.360
-15.200
-26.300
-36.400
-47.300
-56.700
-66.400
-75.000
-81.500
-89.400
-96.100
-103.000
-110.000
0.0004
0.0570
0.1303
0.2302
0.2490
0.3267
0.3761
0.4231
0.4842
0.5293
0.5844
0.6190
0.6719
S-Parameters (Vds = +3.3 V, 50% Idss, T = 22°C, de-embedded into package device in a 50 ohm system)
Freq (GHz) S11 (Mag) S11 (Ang) S21 (dB) S21 (Mag) S21 (Ang) S12 (Mag) S12 (Ang) S22 (Mag) S22 (Ang) K Value
0.05
0.30
0.55
0.80
1.05
1.30
1.55
1.80
2.05
2.30
2.55
2.80
3.05
0.998
0.994
0.973
0.935
0.915
0.880
0.853
0.826
0.788
0.772
0.757
0.755
0.747
-3.580
-21.200
-39.900
-58.000
-74.200
-90.300
-105.000
-120.000
-136.000
-150.000
-163.000
-175.000
174.000
18.900
18.700
18.547
18.105
17.696
17.122
16.547
15.959
15.402
14.807
14.185
13.625
13.064
8.810
8.610
8.460
8.040
7.670
7.180
6.720
6.280
5.890
5.500
5.120
4.800
4.500
176.000
163.000
149.000
136.000
123.000
112.000
100.000
89.900
79.700
70.000
60.800
52.000
43.400
0.002
0.016
0.030
0.042
0.052
0.061
0.068
0.073
0.080
0.083
0.087
0.089
0.090
105.000
78.500
66.900
55.800
46.900
37.200
28.700
20.800
14.000
6.160
-0.455
-6.810
-13.400
0.387
0.392
0.360
0.337
0.317
0.285
0.259
0.250
0.236
0.215
0.189
0.169
0.150
-3.780
-16.300
-29.600
-42.100
-55.600
-67.900
-81.000
-93.100
-102.000
-115.000
-126.000
-138.000
-152.000
-0.0299
0.0449
0.1249
0.2164
0.2394
0.3035
0.3513
0.3876
0.4513
0.4923
0.5445
0.5746
0.6242
Specifications and information are subject to change without notice.
WJ Communications, Inc. • Phone: 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: [email protected] • Web site: www.wj.com
April 2004
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