Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR General Description Features The AP2127 Series are positive voltage regulator ICs fabricated by CMOS process. · · · The AP2127 Series have features of low dropout voltage, low noise, high output voltage accuracy, and low current consumption which make them ideal for use in various battery-powered devices. · · AP2127 has 1.0V, 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 3.0V, 3.3V, 4.2V, 4.75V, 5.2V fixed voltage versions and 0.8V to 5.5V adjustable voltage versions. AP2127 series are available in SOT-23-5 Package. AP2127 Wide Operating Voltage: 2.5V to 6V High Output Voltage Accuracy: ±2% High Ripple Rejection: 68dB@ f=1kHz, 54dB@ f=10kHz Low Standby Current: 0.1µA Low Dropout Voltage: 170mV@300mA for VOUT=3.3V, 140mV@300mA for VOUT=5.2V · · Low Quiescent Current: 60µA Typical Low Output Noise: 60µVrms@VOUT=0.8V · · · Short Current Limit: 50mA Over Temperature Protection Compatible with Low ESR Ceramic Capacitor: 1µF for CIN and COUT · · · Excellent Line/Load Regulation Soft Start Time: 50µs Auto Discharge Resistance: RDS(ON)=60Ω Applications · · · Datacom Notebook Computers Mother Board SOT-23-5 Figure 1. Package Type of AP2127 Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 1 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Pin Configuration K Package (SOT-23-5) VIN 1 GND 2 Shutdown 3 5 VOUT 4 NC/ADJ Figure 2. Pin Configuration of AP2127 (Top View) Functional Block Diagram SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT GND Figure 3. Functional Block Diagram of AP2127 for Fixed Version Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 2 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Functional Block Diagram (Continued) SHUTDOWN Shutdown and Logic Control VIN VREF MOS Driver Current Limint And Thermal Protection VOUT ADJ GND Figure 4. Functional Block Diagram of AP2127 for Adjustable Version Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 3 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Ordering Information AP2127 G1: Green Circuit Type TR: Tape and Reel ADJ: ADJ Output 1.0: Fixed Output 1.0V 1.2: Fixed Output 1.2V 1.5: Fixed Output 1.5V 1.8: Fixed Output 1.8V 2.5: Fixed Output 2.5V 2.8: Fixed Output 2.8V 3.0: Fixed Output 3.0V 3.3: Fixed Output 3.3V 4.2: Fixed Output 4.2V 4.75: Fixed Output 4.75V 5.2: Fixed Output 5.2V Package K: SOT-23-5 Package Temperature Range SOT-23-5 -40 to 85oC Part Number Marking ID Packing Type AP2127K-ADJTRG1 GEH Tape & Reel AP2127K-1.0TRG1 GEG Tape & Reel AP2127K-1.2TRG1 GE1 Tape & Reel AP2127K-1.5TRG1 GEP Tape & Reel AP2127K-1.8TRG1 GEQ Tape & Reel AP2127K-2.5TRG1 GER Tape & Reel AP2127K-2.8TRG1 GES Tape & Reel AP2127K-3.0TRG1 GHF Tape & Reel AP2127K-3.3TRG1 GET Tape & Reel AP2127K-4.2TRG1 GEU Tape & Reel AP2127K-4.75TRG1 GEZ Tape & Reel AP2127K-5.2TRG1 GEW Tape & Reel BCD Semiconductor's products, as designated with "G1" suffix in the part number, are RoHS compliant and Green. Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 4 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Input Voltage VIN 6.5 V Shutdown Input Voltage VCE -0.3 to VIN+0.3 V Output Current IOUT 450 mA TA 150 oC TSTG -65 to 150 oC TLEAD 260 Junction Temperature Storage Temperature Range Lead Temperature (Soldering, 10sec) o C Thermal Resistance θJA 250 oC/W ESD (Human Body Model) ESD 6000 V ESD (Machine Model) ESD 250 V Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Symbol Min Max Unit Input Voltage VIN 2.5 6 V Operating Junction Temperature Range TA -40 85 oC Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 5 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Electrical Characteristics (VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Symbol Conditions Min Typ Max Unit 0.8 0.816 V Reference Voltage VREF VIN=VOUT+1V 1mA≤IOUT≤300mA 0.784 Output Voltage VOUT VIN=VOUT+1V 1mA≤IOUT≤300mA 98%× VOUT 102%× VOUT V 2.5 6 V Input Voltage VIN IOUT(MAX) VIN-VOUT=1V, VOUT=0.98×VOUT Load Regulation ∆VOUT /(∆IOUT*VOUT) VIN-VOUT=1V, 1mA≤IOUT≤300mA 0.6 %/A Line Regulation ∆VOUT /(∆VIN*VOUT) VOUT+0.5V≤VIN≤6V IOUT=30mA 0.06 %/V Maximum Output Current Dropout Voltage Quiescent Current Standby Current Power Supply Rejection Ratio Output Voltage Temperature Coefficient Short Current Limit VDROP IQ ISTD PSRR (∆VOUT/VOUT) /∆T ISHORT 300 400 mA VOUT=1.0V, IOUT=300mA 1400 1500 VOUT=1.2V, IOUT=300mA 1200 1300 VOUT=1.5V, IOUT=300mA 900 1000 VOUT=1.8V, IOUT=300mA 600 700 VOUT=2.5V, 2.8V, 3.0V, 3.3V, 4.2V, IOUT=300mA 170 300 140 300 60 90 µA 0.1 1.0 µA VOUT=4.75V and 5.2V, IOUT=300mA VIN=VOUT+1V, IOUT=0mA VIN=VOUT+1V, VSHUTDOWN in off mode mV f=100Hz AP2127-1.0V to 4.2V, Ripple 1Vp-p f=1kHz VIN=VOUT+1V f=10kHz 68 dB 68 dB 54 dB AP2127-4.75V and f=100Hz 5.2V, Ripple f=1kHz 0.5Vp-p VIN=VOUT+1V f=10kHz 63 dB 63 dB 45 dB IOUT=30mA, -40oC≤TA≤85oC ±100 ppm/oC 50 mA VOUT=0V Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 6 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Electrical Characteristics (Continued) (VIN=2.5V (for 0.8V to 1.8V voltage versions), VIN=VOUT+1V (for 2.5V to 4.75V voltage versions), VIN=6V@VOUT=5.2V, TA=25oC, CIN=1µF, COUT=1µF, Bold typeface applies over -40oC≤TA≤85oC, unless otherwise specified.) Parameter Soft Start Time RMS Output Noise Symbol Conditions Min tSS VNOISE o TA=25 C, 10Hz ≤f≤100kHz, VOUT=0.8V Typ Max Unit 50 µs 60 µVrms Shutdown "High" Voltage Shutdown input voltage "High" 1.5 6 V Shutdown "Low" Voltage Shutdown input voltage "Low" 0 0.4 V VOUT Discharge MOSFET RDS(ON) Shutdown input voltage "Low" Shutdown Pull Down Resistance 60 Ω 3 MΩ Thermal Shutdown 165 o C Thermal Shutdown Hysteresis 30 o C Thermal Resistance θJC SOT-23-5 Oct. 2009 Rev. 1. 3 150 o C/W BCD Semiconductor Manufacturing Limited 7 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics 1.010 IOUT=10mA 1.009 1.008 IOUT=300mA 1.007 VIN=2.5V 1.006 VOUT=1.0V IOUT=10mA IOUT=150mA 3.338 IOUT=300mA 3.336 Output Voltage (V) Output Voltage (V) 3.340 IOUT=150mA 1.005 1.004 1.003 1.002 VIN=4.3V VOUT=3.3V 3.334 3.332 3.330 3.328 3.326 1.001 3.324 1.000 -40 -20 0 20 40 60 80 100 120 -40 -20 0 o Case Temperature ( C) 20 40 60 80 100 120 o Case Temperature ( C) Figure 5. Output Voltage vs. Case Temperature Figure 6. Output Voltage vs. Case Temperature 5.275 5.270 IOUT=10mA 5.265 IOUT=150mA 5.255 IOUT=300mA 0.8 VIN=6V, VOUT=5.2V Output Voltage (V) Output Voltage (V) 5.260 1.0 5.250 5.245 5.240 5.235 0.6 0.4 IOUT=0 0.2 IOUT=300mA 5.230 o 0.0 5.225 -40 TC=25 C -20 0 20 40 60 80 100 120 0.0 o Case Temperature ( C) VOUT=1.0V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 Input Voltage (V) Figure 8. Output Voltage vs. Input Voltage Figure 7. Output Voltage vs. Case Temperature Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 8 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Typical Performance Characteristics (Continued) 6.0 3.5 IOUT=0 5.5 IOUT=300mA 5.0 3.0 o TC=25 C, VOUT=5.2V 4.5 Output Voltage (V) Output Voltage (V) 2.5 2.0 1.5 1.0 IOUT=0 0.5 3.5 3.0 2.5 2.0 1.5 1.0 IOUT=300mA o 0.5 TC=25 C, VOUT=3.3V 0.0 4.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0 1 2 3 4 5 6 Input Voltage (V) Input Voltage (V) Figure 9. Output Voltage vs. Input Voltage Figure 10. Output Voltage vs. Input Voltage 3.5 1.0 3.0 Output Voltage (V) Output Voltage (V) 0.8 0.6 0.4 o TC=-40 C o TC=25 C 0.2 o TC=85 C VIN=2.5V 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 2.0 1.5 o TC=-40 C 1.0 o TC=25 C o TC=85 C 0.5 VOUT=1.0V 0.0 2.5 VIN=4.3V, VOUT=3.3V 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.50 Output Current (A) Output Current (A) Figure 12. Output Voltage vs. Output Current Figure 11. Output Voltage vs. Output Current Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 9 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 6 3.5 5 2.5 Output Voltage (V) Output Voltage (V) 3.0 2.0 1.5 VIN=3.8V VIN=4.3V 1.0 3 2 o TC=-40 C o VIN=6V TC=25 C 1 o TC=25 C, VOUT=3.3V 0.5 4 o TC=85 C VIN=6V, VOUT=5.2V 0 0.0 0.0 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 0.1 0.2 0.3 0.4 0.5 Output Current (A) Output Current (A) Figure 13. Output Voltage vs. Output Current Figure 14. Output Voltage vs. Output Current 80 80 70 70 Quiescent Current (µA) Quiescent Current (µA) 60 50 40 30 o TC=-40 C 20 o TC=25 C o TC=85 C 10 -10 VOUT=1.0V 1 2 3 4 5 50 40 30 o TC=-40 C 20 o TC=25 C 10 IOUT=0 0 60 o TC=85 C IOUT=0, VOUT=3.3V 0 6 0 Input Voltage (V) 1 2 3 4 5 6 Input Voltage (V) Figure 15. Quiescent Current vs. Input Voltage Figure 16. Quiescent Current vs. Input Voltage Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 10 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Typical Performance Characteristics (Continued) 120 80 o TC=-40 C 110 70 o TC=25 C Quiescent Current (µA) Quiescent Current (µA) o 60 50 40 o TC=-40 C 30 o TC=25 C 20 o TC=85 C 10 0 IOUT=0, VOUT=5.2V 0 1 2 3 4 5 100 TC=85 C VIN=2.5V VOUT=1.0V 90 80 70 60 6 0.00 0.05 0.10 Input Voltage (V) 0.15 0.20 0.25 0.30 Output Current (A) Figure 17. Quiescent Current vs. Input Voltage Figure 18. Quiescent Current vs. Output Current 115 110 o 110 TC=-40 C 105 TC=25 C 100 105 o TC=85 C VIN=4.3V, VOUT=3.3V 95 90 85 80 75 o TC=25 C 100 TC=85 C VIN=6V, VOUT=5.2V 95 90 85 80 75 70 65 0.00 o TC=-40 C o Quiescent Current (µA) Quiescent Current (µA) o 0.05 0.10 0.15 0.20 0.25 70 0.00 0.30 Output Current (A) 0.05 0.10 0.15 0.20 0.25 0.30 Output Current (A) Figure 19. Quiescent Current vs. Output Current Figure 20. Quiescent Current vs. Output Current Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 11 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) 64 VIN=2.5V 73 IOUT=0 62 72 Quiescent Current (µA) Quiescent Current (µA) VOUT=1.0V 60 58 56 54 71 70 69 68 IOUT=0 52 -40 67 -20 0 20 40 60 80 100 120 -40 VIN=4.3V, VOUT=3.3V -20 0 o 60 80 100 120 Figure 22. Quiescent Current vs. Case Temperature 80 0.26 79 IOUT=0 0.24 78 VIN=6V,VOUT=5.2V 0.22 77 0.20 76 0.18 Dropout Voltage (V) Quiescent Current (µA) 40 Case Temperature ( C) Figure 21. Quiescent Current vs. Case Temperature 75 74 73 72 71 0.16 o TC=-40 C o TC=25 C o TC=85 C VOUT=3.3V 0.14 0.12 0.10 0.08 0.06 70 0.04 69 68 -40 20 o Case Temperature ( C) 0.02 -20 0 20 40 60 80 100 0.00 0.00 120 o Case Temperature ( C) 0.05 0.10 0.15 0.20 0.25 0.30 Output Current (A) Figure 23. Quiescent Current vs. Case Temperature Figure 24. Dropout Voltage vs. Output Current Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 12 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Typical Performance Characteristics (Continued) 0.24 0.18 Dropout Voltage (V) 0.14 0.12 0.22 TC=-40 C o 0.20 o 0.18 TC=25 C TC=85 C VOUT=5.2V 0.16 Dropout Voltage (V) 0.16 o 0.10 0.08 0.06 0.14 0.12 0.10 0.04 0.08 IOUT=10mA 0.06 IOUT=150mA IOUT=300mA 0.04 0.02 0.00 0.00 VOUT=3.3V 0.02 0.05 0.10 0.15 0.20 0.25 0.00 0.30 -40 -20 40 60 80 100 Figure 26. Dropout Voltage vs. Case Temperature 0.18 2.0 0.16 1.8 0.14 1.6 IOUT=10mA 0.12 Power Dissipation (W) Dropout Voltage (V) 20 Case Temperature ( C) Figure 25. Dropout Voltage vs. Output Current IOUT=150mA IOUT=300mA 0.10 VOUT=5.2V 0.08 0.06 0.04 VOUT=1.0V No heatsink 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.02 0.00 -40 0 o Output Current (A) -20 0 20 40 60 0.0 -40 80 -20 0 20 40 60 80 100 120 o Case Temperature( C) o Case Temperature ( C) Figure 27. Dropout Voltage vs. Case Temperature Figure 28. Power Dissipation vs. Case Temperature Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 13 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Performance Characteristics (Continued) VIN 500mV/div IOUT 200mA/div VOUT 50mV/div VOUT 50mV/div Figure 29. Line Transient (Condition: CIN=COUT=1µF, IOUT=10mA, VIN=2.5V to 3.3V, VOUT=1V) Figure 30. Load Transient (Condition: CIN=COUT=1µF,Sew Rate=20mA/µs, VIN=2.5V, VOUT=1V, IOUT=10mA to 300mA) IOUT IOUT 200mA/div 200mA/div VOUT 50mV/div VOUT 50mV/div Figure 32. Load Transient (Condition: CIN=COUT=1µF,Sew Rate=20mA/µs, VIN=6V, VOUT=5.2V, IOUT=10mA to 300mA) Figure 31. Load Transient (Condition: CIN=COUT=1µF, IOUT=10mA to 300mA, VIN=4.3V, VOUT=3.3V) Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 14 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Typical Performance Characteristics (Continued) 90 IOUT=10mA 80 70 IOUT=300mA VOUT=1V,Ripple=1VPP 70 60 50 50 PSRR (dB) PSRR (dB) 60 40 30 20 40 30 20 IOUT=300mA 10 10 0 IOUT=10mA 100 1000 10000 100000 VOUT=3.3V, Ripple=1VPP 100 Frequency (Hz) 1k 10k 100k Frequency (Hz) Figure 33. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=2.5V, VOUT=1V Ripple=1VPP) Figure 34. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=4.3V, VOUT=3.3V Ripple=1VPP) 70 60 PSRR (dB) 50 40 30 IOUT=10mA 20 IOUT=300mA VOUT=5.2V, Ripple=0.5VPP 10 100 1k 10k 100k Frequency (Hz) Figure 35. PSSR vs. Frequency (Conditions: CIN=COUT=1µF, VIN=6V, VOUT=5.2V Ripple=0.5VPP) Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 15 Data Sheet 300mA HIGH SPEED, EXTREMELY LOW NOISE CMOS LDO REGULATOR AP2127 Typical Application VIN VOUT VIN VOUT AP2127 Shutdown R1 ADJ R2 COUT 1µF GND CIN 1µF VOUT=0.8*(1+R1/R2) V VOUT VIN VIN VOUT AP2127 Shutdown CIN 1µF COUT 1µF GND For 1.0V to5.2V fixed voltage versions Figure 36. Typical Application of AP2127 Oct. 2009 Rev. 1.3 BCD Semiconductor Manufacturing Limited 16 Data Sheet Preliminary Datasheet LOW NOISE CMOS LDO REGULATOR 300mA HIGH SPEED, EXTREMELY AP2127 Mechanical Dimensions SOT-23-5 Unit: mm(inch) 0.300(0.012) 0.600(0.024) 1.500(0.059) 1.700(0.067) 0.100(0.004) 0.200(0.008) 2.950(0.116) 2.650(0.104) 2.820(0.111) 3.020(0.119) 0.200(0.008) 0.700(0.028) REF 0.300(0.012) 0.400(0.016) 0° 8° 1.800(0.071) 2.000(0.079) 0.000(0.000) MAX 1.450(0.057) 0.950(0.037) TYP 0.100(0.004) 0.900(0.035) 1.300(0.051) Oct. 2009 Rev. 1. 3 BCD Semiconductor Manufacturing Limited 17 BCD Semiconductor Manufacturing Limited http://www.bcdsemi.com IMPORTANT NOTICE IMPORTANT NOTICE BCD Semiconductor BCD Semiconductor Manufacturing Manufacturing Limited Limited reserves reserves the the right right to to make make changes changes without without further further notice notice to to any any products products or or specifispecifications herein. cations herein. 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